- Force Microscopy Techniques and Applications
- Near-Field Optical Microscopy
- Adhesion, Friction, and Surface Interactions
- Advanced Battery Technologies Research
- Surface and Thin Film Phenomena
- Advancements in Battery Materials
- Electron and X-Ray Spectroscopy Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Surface Roughness and Optical Measurements
- Ferroelectric and Piezoelectric Materials
- Ultrasonics and Acoustic Wave Propagation
- Non-Destructive Testing Techniques
- Advanced Materials Characterization Techniques
- Acoustic Wave Resonator Technologies
- Mechanical and Optical Resonators
- Magnetic properties of thin films
- Transition Metal Oxide Nanomaterials
- Chalcogenide Semiconductor Thin Films
- Anodic Oxide Films and Nanostructures
- Advanced Measurement and Metrology Techniques
- Thermography and Photoacoustic Techniques
- Gold and Silver Nanoparticles Synthesis and Applications
- Geophysical Methods and Applications
- Electronic and Structural Properties of Oxides
- ZnO doping and properties
Kansai University
2011-2023
Kyushu University
2016
Tokushima Bunri University
2016
Hiroshima University
2016
Keiai University
2016
Shibaura Institute of Technology
2015
Nagoya University
2013
Fraunhofer Institute for Nondestructive Testing
2011
Ehime University
2011
Hitachi (Japan)
1993-2006
A new type of microscope, which is based upon both a scanning tunneling microscope (STM) and technique for detecting acoustic waves, described. An wave generated in STM’s sample, by vibration its tip, detected piezoelectric transducer coupled to the sample. The amplitude corresponds strength force interaction between tip sensitive tip-sample spacing. We have been successful keeping spacing constant using feedback loop that holds this without tunneling. This method enhances features STM...
Au-adsorbed structures (∼1 ML) on the Si(111) surface are studied using a scanning tunneling microscope. In initial stage of deposition, locally Au atoms adsorbed onto with 5×5 periodicity. At lower coverage, images showing 5×2 periodicity recorded, in which there dark line and two atomic rows running [1̄01] direction five times period. each row, arranged period along row. higher (3)1/2×(3)1/2 structure also recorded. these images, addition to (3)1/2 ×(3)1/2 periodicity, is an undulation...
Si pn junctions fabricated by photoresist masked As+ implantation were observed using current imaging tunneling spectroscopy (CITS) in a scanning microscope (STM). Using the CITS, specific bias was chosen to define n-type or p-type areas according whether not flowed. The could be easily identified from image at this and STM topographic image. It also proved possible find processing faults related implantation. images structure (corrugations) near junctions, associated with volume expansion...
The initial stage of Au adsorption onto a Si(111) surface (<0.2 ML) is studied by scanning tunneling microscopy (STM). deposited at room temperature, and then the sample annealed 700 °C. At very early adsorption, Au-adsorbed 5× structure found not to break 7×7 structure. By increasing amount adsorbed Au, Si substrate itself shows Rows are observed have grown from lower side steps.
Strain imaging of piezoelectric material enables us to observe piezo/ferroelectric properties with high resolution. We observed single-step-deposited 0.4-μm-thick Pb(Zr0.53Ti0.47)O3 (PZT). The PZT film had the small granular grains in size around 40 nm, while rosettes were several micrometers diameter. Observed domain structures only determined by rosette formed nucleation PZT. not columnar but granular, and so there are many thickness direction they (001)-oriented. Therefore, polarization...
Photochromic nanoparticles of zinc-silicon oxide were synthesized using plasma enhanced chemical vapor deposition. These particles turned black upon irradiating with ultraviolet light. We investigated this phenomenon density functional theory calculations. Silicon inclusions create trap levels and oxygen defects that reduce the ionization potential ZnO. This forms a quantum between ZnO oxide, excited electron is stable. Because also increase bond overlap population zinc atoms in crystal,...
Strain-imaging observation of a lead-zirconate-titanate film using tunneling acoustic microscope (TAM) is described. This method detects fine strains in the piezoelectric generated by tip voltage and, therefore, measures and images properties sample. The are detected either as surface displacement sample feedback loop to keep tip-to-sample spacing constant, or vibration an alternating current transducer TAM. Microscopic 70-nm-thick Pb(Zr0.5Ti0.5)O3 grown sputtering were investigated,...
An inchworm system with a new type of clamping mechanism has been made for coarse positioner in scanning tunneling microscope. The operates by means springs and piezoelectric actuators. This can move probe tip transversely longitudinally the horizontal plane, sample vertically, steps, range 8 mm each direction.
Ferroelectric domain observation by static piezoelectric deformation has been described Gruverman et al. If the observed protrusions are caused induced depolarization fields of domains, as suggested in article, serious questions arise. The author believes that not ferroelectric domains. In imaging deformation, it is difficult to distinguish corrugation due from those other possible causes.
A fast scanning tunneling microscope (FSTM) is developed using a new method of compensating for the probe tip servo error in constant current mode. The compensation value derived from ratio tunnel fluctuation to (ΔI/I) differential equation. Dynamic video images Si(111) adatomic structures taken FSTM prove that this effective scanning.
An influence of the dopant concentration on polycrystalline Si grain structure, electronic structure and segregation in 800 °C 30 min annealing is investigated. Barrier height images topographies arsenic implanted silicon surface are obtained using tunneling barrier imaging (TBI) scanning microscopy (STM) with vacuum pressure less than 5×10−7 Torr. As results, a conduction band bending caused by ion implantation can be observed TBI. A comparison TBI image STM identify whether region or...
This paper describes Strain-Imaging observation, using a tunneling acoustic microscope, of lead-zirconate-titanate (PZT) thin films. Strain Imaging detects fine strains generated by the tip voltage in piezoelectric method reveals properties nondestructively with high spatial resolution and is suitable for characterization PZT materials microelectric devices. In Pb(Zr 0.5 Ti )O 3 grown rf magnetron sputtering, we have observed different between round grain structures, so-called “rosettes”,...
We imaged changes in volume of graphite particles a Li-ion battery due to the insertion and extraction Li ions using scanning probe microscopy. When were extracted from particles, contracted, while expansion was induced interspaces between particles. Variations images depending on modulation frequencies clearly showed lithium intercalation. A linear relationship amplitudes products diffusion elements reciprocals has been proven. Thus, detected signals quantitatively well corresponded ion movements.
A tunneling acoustic microscope is a new type of which based on both scanning and technique for detecting waves. It enables simultaneous detection force interactions between tip sample current. Using this microscope, defects silicon surface induced by thermal oxidation have been observed changes in conductivity with high spatial resolutions.
Excellent resolutions of scanning probe microscopes (SPMs) enable us to image thermal strains with high special and sensitivities. Recently, expansion has been applied for controlling a gap between magnetic head disk in hard drive, which was key technology areal density recording. An SPM can detect the generated distribution along topography. The strain images obtained at several frequencies, showed extent magnitude protrusions quantitatively, revealed frequency dependence dynamic...
In this article I describe strain-imaging observation of a lead–zirconate–titanate film using tunneling acoustic microscope. Strain Imaging is based on microscopically detecting fine strains generated in samples by any modulation. piezoelectric films, the properties are measured with high resolution tip voltage. The detected either as surface displacement sample feedback loop, which keeps tip-to-sample spacing constant, or vibration an alternate current voltage means transducer Microscopic...
This paper presents a novel method for high-resolutions imaging of band-gap energies semiconductors. When electron-hole pairs are generated in semiconductor irradiated with laser, they induce electronic strains the semiconductor. The can be detected and imaged by scanning probe microscope. electron-hole-pair generation depends on photon energies. there variations sample, could regions having narrower gaps than energy, so their distributions imaged. threshold varied changing Consequently, we...
In this paper we describe a novel method for observing the domain structure of magnetic material by strain imaging. When field is applied to material, generated forces, electromagnetic interactions, and magnetostriction. Because has factors that depend on magnetization each domains, can observe detecting imaging strains using scanning probe microscope. We have been successful in domains hard disk lock-in induced an alternating field, atomic force
When a magnetic material was subjected to an external field, strain generated in the and detected imaged with scanning probe microscope. The images obtained unipolar fields, however, were quite different from those bipolar fields. We discuss field dependence of imaging propose physical interpretation. conclude that strains are magnetostrictive weak mainly caused by forces strong fields represent domain structures at peak distribution asymmetry magnetization reversal.
Strain imaging is used to measure and image piezoelectric properties by detecting electric-field-induced strains using a scanning probe microscope. In this letter, we present ferroelectric domain under an electrode in lead-zirconate-titanate (PZT) film. The has been achieved the surface force modulation caused displacements. Observation through suppresses effect of space charges enables us investigate PZT film same situation devices. We observed freezing polarization deoxidized atomic...