A5073669010- Magnetic and transport properties of perovskites and related materials
- Electronic and Structural Properties of Oxides
- Multiferroics and related materials
- Ferroelectric and Piezoelectric Materials
- Advanced Condensed Matter Physics
- Semiconductor materials and devices
- Freezing and Crystallization Processes
- Acoustic Wave Resonator Technologies
- Fault Detection and Control Systems
- Dielectric properties of ceramics
- Advanced Control Systems Optimization
ETH Zurich
2020-2021
Max Planck Institute for Solid State Research
2017-2020
We identified quasiparticle states at well-defined energies inside the superconducting gap of electron system LaAlO$_3$-SrTiO$_3$ interface using tunneling spectroscopy. The are found only in a number samples and depend upon thermal-cycling history samples. consist peak zero energy other peaks finite energies, symmetrically placed around energy. These disappear, together with gap, increasing temperature magnetic field. discuss likelihood various physical mechanisms that known to cause in-gap...
Atomically sharp domain walls in ferroelectrics are considered as an ideal platform to realize easy-to-reconfigure nanoelectronic building blocks, created, manipulated and erased by external fields. However, conductive have been exclusively observed oxides, where wall mobility conductivity is largely influenced stoichiometry defects. Here, we report on giant of the non-oxide ferroelectric GaV4S8. We observe forming zig-zagging structures, that composed head-to-head tail-to-tail segments...
In improper ferroelectrics, polar order emerges as a byproduct of primary parameter, such magnetic ordering or structural distortion. Therefore, it is believed that ferroelectrics react differently to electric field poling compared usual . Here, using cryogenic scanning probe microscopy, the authors show for ferroelectric YMnO${}_{3}$ that, surprisingly, this not necessarily case. Improper can behave similarly proper in many ways, while exhibiting intriguing additional functionalities.
Abstract Systems with long-range order like ferromagnetism or ferroelectricity exhibit uniform, yet differently oriented three-dimensional regions called domains that are separated by two-dimensional topological defects termed domain walls. A change of the ordered state across a wall can lead to local non-bulk physical properties such as enhanced conductance promotion unusual phases. Although highly desirable, controlled transfer these between bulk and spatially confined walls is usually not...
Abstract Spin-spiral multiferroics exhibit a magnetoelectric coupling effects, leading to the formation of hybrid domains with inseparably entangled ferroelectric and antiferromagnetic order parameters. Due this strong coupling, conceptually advanced ways for controlling antiferromagnetism become possible it has been reported that electric fields laser pulses can reversibly switch order. This switching spin textures is great interest emergent field spintronics. Established approaches,...
The superconducting density of states the two-dimensional electron system at ${\mathrm{LaAlO}}_{3}--{\mathrm{SrTiO}}_{3}$ interface exhibits broad quasiparticle peaks that are well described by Dynes parameter $\mathrm{\ensuremath{\Gamma}}$. We measured $\mathrm{\ensuremath{\Gamma}}$ in a wide range temperatures and gate voltages using tunneling spectroscopy. ${T}^{q}$ temperature dependence, with $q=2.2\ifmmode\pm\else\textpm\fi{}0.2$. discuss several interpretations conclude is an...
Numerous two-dimensional superconductors exhibit a characteristic dome-shaped dependence of the critical temperature ${T}_{\mathrm{c}}$ on carrier density. The reduction with increasing charge density overdoped side this dome is frequently related to scattering arising from conduction in multiple bands. Multiband superconductivity can be resolved by tunneling spectroscopy, but interpretation spectroscopic data ambiguous. Superconductivity bands also expected affect upper field...
We have manufactured oxide field-effect transistors using the electron system at LaAlO3-SrTiO3 interface as a drain-source channel and measured devices under hydrostatic pressure of up to 1.8 GPa. These studies in high-pressure regime demonstrate remarkable stability against gate leakage resilience mechanical strain. They show that can be operated wide range pressures temperatures open road for future materials their possible applications electronics.