A5101691413- Surface and Thin Film Phenomena
- Advanced Chemical Physics Studies
- Quantum and electron transport phenomena
- Physics of Superconductivity and Magnetism
- Electron and X-Ray Spectroscopy Techniques
- Semiconductor Quantum Structures and Devices
- X-ray Spectroscopy and Fluorescence Analysis
- nanoparticles nucleation surface interactions
- Atomic and Molecular Physics
- Ion-surface interactions and analysis
- Advanced materials and composites
- Force Microscopy Techniques and Applications
- Nuclear Materials and Properties
- Fusion materials and technologies
- Advanced Electron Microscopy Techniques and Applications
Tokamak Energy (United Kingdom)
2023
University of Liverpool
1994-2005
Auger $KLL$ and $1s$ photoelectron spectra of silicon have been studied from samples Si delta doped layers in GaAs with very thin capping layers. By tuning the exciting photon energy through K edge resonant were obtained. A comparison $x$-ray absorption (XAS) vicinity edges dependence indicates that each material process involves a narrow state band gap localized at sites. The dispersion peak sheds light on nature these states XAS data around they are located gap. results yield information...
As-terminated Si surfaces are model semiconductor interface systems with a wide range of technological applications. We have studied (001) scanning tunneling microscopy which reveals that it is possible to produce well ordered surface. Some characteristic types defects do occur on this surface, however, found be particular interest. These include antiphase domain boundaries, step edges, and long, atomically straight trenches running perpendicular the dimer rows across The nature origin these...