A5008329140- Semiconductor materials and devices
- Radiation Effects in Electronics
- 2D Materials and Applications
- MXene and MAX Phase Materials
- Advanced MEMS and NEMS Technologies
- Chalcogenide Semiconductor Thin Films
- solar cell performance optimization
- Advancements in Battery Materials
- Advancements in Semiconductor Devices and Circuit Design
- Silicon and Solar Cell Technologies
- Mechanical and Optical Resonators
- Advanced Photocatalysis Techniques
- VLSI and Analog Circuit Testing
- Multiferroics and related materials
- ZnO doping and properties
- Advanced Condensed Matter Physics
- Ga2O3 and related materials
- Magnetic and transport properties of perovskites and related materials
- Nanowire Synthesis and Applications
- Advanced Memory and Neural Computing
- Semiconductor materials and interfaces
- Silicon Carbide Semiconductor Technologies
- Photonic and Optical Devices
- Low-power high-performance VLSI design
- Electronic and Structural Properties of Oxides
Harbin Institute of Technology
2015-2025
Institute of Microelectronics
2022
Chinese Academy of Sciences
2022
Harbin University
2015-2019
State Council of the People's Republic of China
2015
Heilongjiang Institute of Technology
2007
The schematic overview of the future research directions for group IV elemental 2D materials beyond graphene applied to alkali-ion batteries.
The impacts of total ionizing dose (TID) were investigated in 28 nm 3D charge trapping (CT) NAND Flash memories. This study focused on the variations raw bit error rate (RBER) irradiated flash across different operational modes and bias states. It was observed that data pattern stored influences count after irradiation. experimental findings demonstrated a dose-dependent relationship with standby current, read operation threshold voltage shifts. Additionally, TID found to affect time...
In this paper, we report the fast and sensitive lateral photovoltaic (LPE) effects in a Fe<sub>3</sub>O<sub>4</sub>/Si junction.
Calculations using the Heyd-Scuseria-Ernzerhof screened hybrid functional reveal detailed influence that surface vacancies have on electronic and optical properties of low-dimensional (LD) β-Ga2O3. Vacancies manifest subtle changes to characteristics as oxygen states predominate valence band at surface. Dielectric functions are found increase with defects. A broad impact properties, such absorption coefficients, reflectivity, refractive indices, electron loss, is seen increased vacancy Both...
The long-term reliability of SiC power MOSFETs under total ionizing dose (TID) effects was investigated in this article. Time-dependent dielectric breakdown (TDDB) test showed that the degradation behavior gate leakage current is dependent on bias voltage. At a critical 43.5 V, first increases and then decreases before oxide breakdown. In case, hole trapping, interface trap depassivation, as well electron trapping during Fowler–Nordheim (FN) tunneling occur sequentially within oxide,...
The degradation of inverted metamorphic fourjunction (GaInP/GaAs/In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.3</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.7</sub> As/In xmlns:xlink="http://www.w3.org/1999/xlink">0.58</sub> xmlns:xlink="http://www.w3.org/1999/xlink">0.42</sub> As, IMM4J) solar cells irradiated by 1-MeV electrons was investigated via their spectral responses and the characterization electrical properties. As in...
The electrical properties, defects and conductivity recombination mechanism of electron ion irradiations were investigated in n-type 4H-SiC Schottky diodes. incident particles selected as 1 MeV electrons, 25 C 40 Si ions, respectively. diodes characterized using deep level transient spectroscopy (DLTS). primary knock-on atoms (PKAs) distribution the irradiated is calculated by SRIM code. According to experimental results, there are significant differences between produced electrons heavy...
The effects of space radiation on the structural and electrical properties MoS2 field effect transistors (FETs) were investigated. 1 MeV electronically equivalent International Space Station (ISS) track was used to apply fluence orbital for 10 (1.0 × 1012 cm-2) 30 years (3.0 using AP8 AE8 models. X-ray photoelectron spectroscopy (XPS), Raman photoluminescence (PL) spectra recorded before after irradiation. Electron irradiation produced strong desulfurization in FETs. PL did not change...
In this paper, single-event upset (SEU) is predicted using a combination of technology computer aided design (TCAD) and Geant4 Monte Carlo simulations. According to the layout topology 65 nm complementary metal-oxide-semiconductor (CMOS) static random access memory (SRAM) arrays, sensitive volumes (SVs) off on-transistors were calibrated by TCAD novel circuit schematics. The effects on-transistor charge collection on SEU studied, criterion for occurrence proposed. Heavy ion simulation...
The effects of 1 MeV electron irradiation on <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3 Schottky barrier diodes (SBDs) were studied in this work. After an fluence notation="LaTeX">$1\times 10\,\,^{{16}}$ cm−2, the forward turn-on voltage SBD decreased from 0.82 to 0.77 V, reverse current at −100 V by 79%, height 1.01 0.92 eV, and ideality factor increased...
Calculations using the revised Heyd-Scuseria-Ernzerhof screened hybrid functional (HSE06) reveal opto-electronic effects of carbon in β-Ga2O3. Stable charged states with dopant are proved by phonon calculations which can result deep levels band gap. Stronger distortion happen around oxygen sites substituted than those at gallium leading to interactions changing. Temperature and pressure have huge effect on formation substitutions electronic conductivity. As partial increase, substitution...