A5053334104- Advanced Memory and Neural Computing
- Neural Networks and Reservoir Computing
- Phase-change materials and chalcogenides
- Photonic and Optical Devices
- Optical Network Technologies
- 2D Materials and Applications
- CCD and CMOS Imaging Sensors
- Photoreceptor and optogenetics research
- Ferroelectric and Negative Capacitance Devices
- Quantum Dots Synthesis And Properties
- Quantum-Dot Cellular Automata
- Neuroscience and Neural Engineering
Nanjing University of Posts and Telecommunications
2022-2025
Abstract Photonic neural networks have garnered significant attention in recent years due to their ultra-high computational speed, broad bandwidth, and parallel processing capabilities. However, compared conventional electronic nonlinear activation function (NAF), progress on efficient easily implementable optical (ONAF) was barely reported. To address this issue, we proposed a programmable, low-loss ONAF device based silicon micro-ring resonator capped with the Antimony selenide (Sb 2 Se 3...
Abstract Graphene photodetectors face challenges like weak absorption and narrow spectral range. To overcome these weakness, we proposed a novel photodetector based on Gold (Au)/Graphene/Chalcogenide (Sb 2 S 3 ) hetero-junction, leveraging surface plasmonic phase-transition effects. Simulations show that optimizing Au Sb nanoantenna thicknesses diameters can achieve an efficiency of 0.9 for both amorphous crystalline states, with adjustable wavelength range 200 nm. The device demonstrates...
Neuromimetic devices have emerged as transformative technologies with the potential to redefine traditional computing paradigms and enable advanced artificial neural systems. Among various innovative materials, two-dimensional (2D) materials garnered attention frontrunners for next-generation device fabrication. In this work, we report fabrication comprehensive characterization of a memristor based on 2D PtTe2. The demonstrates exceptional performance metrics, including high OFF/ON ratio,...
Abstract MBenes, as emerging two-dimensional transition metal borides, have garnered significant attention in nanomaterials, but their application memristors remains largely unexplored. This study focuses on chromium boride (CrB) memristor fields, examining its structure and properties through first-principles calculations simulating Ag ion diffusion within CrB layers. We fabricated an Ag/CrB/TiN memristor, which exhibited stable resistive switching durability beyond 100 cycles. Our findings...
All-optical integrated phase-change memories have most recently attained considerable interest not only in conventional storage field, but also emerging neuromorphic regime. Its relatively weak scalability and complex programming scenario however posed insurmountable challenges to overwhelm its electronic rival. To combine the advantages of both photonic devices, we here proposed physically-realistic electric field temperature dependent optical models simulate readout performances previously...
Phase-change photonics integrated circuits (PICs) have most recently attained considerable attention due to their broad bandwidth, superfast processing speed, and multiplexing function. However, poor scalability adversely limited current PICs into single cell or simple architectures. To overcome this issue, for the first time we modelled write readout performances of Ge2Sb2Te5-based nanophotonic architecture with indium-Tin-oxide (ITO) heater crossbar platinum (Pt) electrodes. The updated...
Phase-change integrated photonics devices, evolving from the combinations of phase-change materials (PCMs) and silicon photonics, are subjecting to intensive research today. This is because devices inherit performances superiorities both storage memory in data transmission system. The programming mechanism photonic can be either optically driven switching or electrically switching. In comparison with its optical rival, switching, usually realized by an microheater, requires simpler scenario...