The magnetic characteristics of 0.2×0.4×0.02 μm3 cobalt islands were investigated using force microscopy in the presence an applied field. noninteracting and showed a wide variety single multidomain configurations. distribution magnetization directions supports earlier models which suggest that crystalline anisotropy plays dominant role establishing dispersion easy axis about long particles. evolution, involving rotation switching individual islands, was observed at various points along...

This paper presents an automatic manipulation system consisting of microscope and pneumatic actuator. Through image captured by with a CCD camera, the position between probe object can be calculated in plane. A visual fuzzy controller is designed to improve precision nonlinear manipulator. From experimental results, error below 1 pixel. The applied puncture fish embryo.

We present a high-resolution, damage-free etching technique for GaAs and related compound semiconductors which utilizes surface-specific photochemistry at 193 nm to excite physisorbed layer of Cl2 on cryogenically cooled (∼140 K) sample. Etch rates as high 0.25 Å/pulse (corresponding 0.09 μm/min) have been achieved. Etching is anisotropic, etched features 0.2–0.3 μm linewidth routinely obtained. The etch rate has characterized function several ‘‘system’’ parameters including Cl2-partial...

The fabrication of single quantum well (SQW) ridge waveguide ring laser in strained InGaAs is described which utilizes direct-write lithography followed by cryogenic UV laser-assisted etching. has a threshold current 270 mA and emits ∼14 mW single-frequency output.

We demonstrated the fabrication of a novel semiconductor laser diode with cavity formed by spatial soliton waveguide based on photovoltaic photorefractive effect. The device is fabricated metal organic chemical vapor deposition (MOCVD)-grown InGaAlP multiple-quantum-well structure ridge-waveguide circular ring resonator and Y-junction directional coupler section. optical properties can be effectively modulated emission from coupling coupler. showed hybrid output spectral characteristics...

We present our latest experimental results in wavelength stabilization of high power laser diode systems by using Volume Holographic (Bragg) Gratings. Such are used as optical pumps to increase the efficiency and brightness Thin Disk Lasers. To achieve a wide locking range from threshold until maximum operation current (for example 30A 250A), careful control system alignment is necessary ensure effective feedback locking, without strong gratings which could reduce efficiency. For this...

We report excimer-laser-induced etching of GaAs surfaces covered with a layer condensed Cl2. The experiments were performed at low temperatures (120–150 K) and in chlorine ambient (P=1–40 mTorr). Spatially well-resolved, anisotropic has been demonstrated an observed etch rate 0.25 Å/pulse (0.1 μm/min for typical parameters). is characterized as function the various system parameters (pressure, temperature, laser repetition rate, fluence, etc.), model proposed to describe mechanism.

We present the fabrication of an InGaAlP multiple-quantum-well semiconductor laser with a ridge waveguide circular ring resonator using novel UV-laser-assisted etching at cryogenic substrate temperature -130 °C. For 250-µm-radius and 500 µm Y-junction output coupling section, light-intensity measurement shows threshold current 600 mA power 2.0 mW by pulse mode injection 10 kHz. The spectral characterization lasing wavelength centered 658.2 nm side rejection ratio as high 5 dB.

The present unstructured-grid method follows strictly the basic finite volume forms of conservation laws governing equations for entire flow domain.High-order

We report the fabrication of a semiconductor circular ring lasers based on an InGaAlP∕InGaP graded-index separate confinement heterostructure (GRIN-SCH) which attracted much attention for light sources in optical information processing systems such as laser printer, compact disk player and link system. The dimensions cavity are 100μm–250μm diameter, 5–10μm width ridge waveguide, Y junction output coupler 250μm length. An ultraviolet (UV) laser-assisted etching process two-layer...

We report the observation of emission solitons from a semiconductor circular ridge waveguide ring laser with Y-junction coupler. The light–current (L–I) characteristics soliton through nonwaveguide region, which refers to photovoltaic solitons, has low threshold value and high quantum efficiency compare coupler, spectrum is similar that linear strip multimode emission. feedback light end facet coupling section continuously enhances excitation region until lasing condition reached. It...

An all-semiconductor-optical-amplifier loop device with a multimode interference (MMI) coupler was fabricated the deep UV cryo-etching technique. Efficient power-dependent switching observed. With continuous-wave signals, nonlinear occurred due to combined effect of coupling in MMI and lateral wave field redistribution caused by structure. Simulation results showed good agreement trend experimental data.

Applying the compressibility of air, vibration transmissibility can be reduced by passive pneumatic isolator, but amplitude in low frequency is still not decreased, even having resonance. Using active isolator disadvantage system improved. The mathematical model built up and characteristics effecting parameter are defined. off line method to identify valve controlled system, design adaptive controller control isolator. experiments show that decreased control.

High-performance microstrip circulators in the Ka-band that utilizes new ferrite substrates and temperature stable magnets have been developed. A special resonator configuration was analyzed, modeled, optimized. The isolation return loss of greater than 17 dB, an insertion less 0.6 dB. Test results indicated almost no performance variations over range -30 to +60 degrees C.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

This study on utilizing HV-CV analysis to investigate the correlation between defect generation regions and field plates in pGaN HEMT. The FPs can reduce surface improve VBD, but it may introduce complexities trapping behavior HTRB. However, we used demonstrate that presence of C impurities buffer layer results positive negative charge redistribution. Furthermore, optimizing process enhances performance reliability, particularly below near gate.

The transparent film calcium zinc oxide with indium doping was prepared by spray pyrolysis nitrate, acetate and nitrate precursors. With the increasing of concentration, blue shift cutoff wavelength in transmission spectra can be observed. optical bandgap for ZnO:In CaZnO:In thin films were 3.34 3.41 eV, respectively. N-type conduction observed doped films. conductivity, concentration mobility characterized. CaZnO shows talent performance application high band gap conducting film.

We demonstrated the fabrication of a novel semiconductor laser diode with cavity formed by spatial soliton waveguide based on photovoltaic photorefractive effect. The device is fabricated metal organic chemical vapor deposition (MOCVD)-grown InGaAlP multiple-quantum-well structure ridge-waveguide circular ring resonator and Y-junction directional coupler section. optical properties can be effectively modulated emission from coupling coupler. showed hybrid output spectral characteristics...

We present the fabrication of a silicone based metal-insulator-semiconductor (MIS) device using aluminum nitride (AlN) as dielectric layer and its characteristics photo-responsivity. Pulse laser deposition was used to deposit AlN with good surface morphology interface properties. Current v.s. voltage (I-V) measurements characterize electro-optic properties MIS devices fabricated. A photo-responsivity 0.75 A/W at 750 nm achieved 9.8 thick layer. In addition, photo sensitivity various...