A5024824591- Graphene research and applications
- 2D Materials and Applications
- Topological Materials and Phenomena
- Nanowire Synthesis and Applications
- Characterization and Applications of Magnetic Nanoparticles
- Mechanical and Optical Resonators
- Gas Sensing Nanomaterials and Sensors
- Microfluidic and Bio-sensing Technologies
- Photonic and Optical Devices
- ZnO doping and properties
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Sensor and Energy Harvesting Materials
- Carbon Nanotubes in Composites
- Machine Learning in Materials Science
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Electrohydrodynamics and Fluid Dynamics
- Advanced Thermoelectric Materials and Devices
- Modular Robots and Swarm Intelligence
- Advanced Condensed Matter Physics
- Electronic and Structural Properties of Oxides
- Conducting polymers and applications
- Molecular Junctions and Nanostructures
- Phase-change materials and chalcogenides
- Thermal properties of materials
Institute for Microelectronics and Microsystems
2021-2024
Laboratoire d'Analyse et d'Architecture des Systèmes
2018-2022
Centre National de la Recherche Scientifique
2016-2021
Université de Toulouse
2018-2021
Institut des Nanotechnologies de Lyon
2016-2019
Matériaux Ingénierie et Science
2018
Université Claude Bernard Lyon 1
2016
Roche (France)
2016
Due to their superior mechanical properties, 2D materials have gained interest as active layers in flexible devices co-integrating electronic, photonic, and straintronic functions altogether. To this end, bendable membranes compatible with the technological process standards endowed large-scale uniformity are highly desired. Here, it is reported on realization of based silicene (the form silicon) by means a which fully detached from native substrate transferred onto arbitrary substrates. The...
Abstract The synthesis of new Xenes and their potential applications prototypes have achieved significant milestones so far. However, to date the realization Xene heterostructures in analogy with well known van der Waals remains an unresolved issue. Here, a heterostructure concept based on epitaxial combination silicene stanene Ag(111) is introduced, how one layer enables another different nature grow top demonstrated. Single‐phase (4 × 4) synthesized using as template, grown other way...
The synthesis of silicene by direct growth on silver is characterized the formation multiple phases and domains, posing severe constraints spatial charge conduction towards a technological transfer to electronic transport devices. Here we engineer silicene/silver interface two schemes, namely, either through decoration Sn atoms, forming an Ag2Sn surface alloy, or buffering with stanene layer. Whereas in both cases Raman spectra confirm typical features as expected from silicene, electron...
Abstract Heterostacks formed by combining two-dimensional materials show novel properties which are of great interest for new applications in electronics, photonics and even twistronics, the emerging field born after outstanding discoveries on twisted graphene. Here, we report direct growth tin nanosheets at limit via molecular beam epitaxy chemical vapor deposited graphene Al 2 O 3 (0001). The mutual interaction between is evidenced structural investigations. On one hand, Raman spectroscopy...
Stabilization of substrate-free silicene on a months timescale is proven by all-around encapsulation in three steps, epitaxial growth silicene–stanene heterostructure silver substrate, capping with an alumina layer, and substrate removal.
Stabilization of silicene and preservation its structural electronic properties are essential for processing future integration into devices. The stacking on stanene, creating a Xene-based heterostructure, proves to be viable new route in this respect. Here we demonstrate the effectiveness stanene layer breaking strong interaction between Ag(111) substrate. role as 'buffer' is investigated by analyzing optical response epitaxial through both power-dependent Raman spectroscopy reflectivity...
Here we report on the influence of anisotropic microstructure performances magnetically soft micro-patterns intended to integrate microfluidic systems. These are made a composite obtained by mixing carbonyl iron particles with polydimethylsiloxane, which offers practical integration advantages. We investigated wide range magnetic particle loadings, from 10wt% 83wt%, reaching magnetization as high 630 kA/m. A homogeneous field was applied during polymer’s cross-linking phase so that obtain 1D...
Bismuth–antimony alloy (Bi1 – xSbx) is the first reported 3D topological insulator (TI). Among many TIs to date, it remains most promising for spintronic applications thanks its large conductivity, colossal spin Hall angle, and possibility build low-current spin-orbit-torque magnetoresistive random access memories. Nevertheless, 2D integration of on industrial standards lacking. In this work, we report high-quality rhombohedral BiSb(0001) insulators a cubic GaAs(001) substrate. We...
Integrating self-catalyzed InAs nanowires on Si(111) is an important step toward building vertical gate-all-around transistors. The complementary metal oxide semiconductor (CMOS) compatibility and the nanowire aspect ratio are two crucial parameters to consider. In this work, we optimize morphology by changing growth mode from Vapor-Solid Vapor-Liquid-Solid in a CMOS compatible process. We study key role of Hydrogen surface preparation growths bound it change chemical potential adatoms...
Abstract Silicene has recently been revisited as a 2D material with potential thermoelectric applications. Here, the thermal properties of supported silicene are determined by optothermal Raman spectroscopy. Single and multilayer is grown either directly on silver (Ag) substrates or an intermediate tin (Sn) monolayer, introduced to reduce influence substrate physical silicene. Experimental values effective cross‐plane conductivity 0.5 W/mK obtained for Ag 0.3 stanene‐Ag. The interfacial...
The epitaxy of silicene-on-Ag(111) renewed considerable interest in silicon (Si) when scaled down to the two-dimensional (2D) limit. This remains one most explored growth cases emerging 2D material fashion beyond graphene. However, out a strict silicene framework, other allotropic forms Si still deserve attention owing technological purposes. Here, we present Solid Phase Crystallization (SPC) starting from an amorphous-Si on Ag(111) atomic coverage gain crystalline-Si layer by post-growth...
III-V nanowires gained general interest due to their unique properties such as high mobility, direct band gap and wide coverage of the solar spectrum. They provided advances in fields optoelectronics, nanoelectronics energy applications. Recently, focus has been shifted towards self-catalyzed growth these on silicon since gold produces detrimental mid-gap states silicon. However, lattice mismatch presence native oxide hinders vertical uniform arrays (Si). In this context, different surface...
Heterostacks formed by combining two-dimensional materials show novel properties which are of great interest for new applications in electronics, photonics and even twistronics, the emerging field born after outstanding discoveries on twisted graphene. Here, we report direct growth tin nanosheets at limit via molecular beam epitaxy chemical vapor deposited graphene Al2O3(0001). The mutual interaction between is evidenced structural investigations. On one hand, Raman spectroscopy indicates...
There is a great interest in the synthesis of bendable materials that are compatible with technological process standards for realization flexible electronic, photonic, and straintronic devices.In article number 2211419, Christian Martella, Carlo Grazianetti, Alessandro Molle, co-workers report on strain-responsive membranes based 2D form silicon, silicene.