Abstract We have theoretically investigated the effect of an interface trap charge (ITC) on Coulomb oscillation characteristics in a Si MOS-type quantum dot (Q-dot). found that ITC causes variation fundamental oscillation: peak position, height, and interval. clarified dependence each position is different from other because their physical origins. also discussed amount viewpoint operation Q-dots required computers (QCs). Mitigating large caused by will be critical issue for achieving...

A tospovirus-like virus recovered from netted melon was transmitted by Thrips palmi in a persistent manner but had different cytopathological features tospoviruses previously reported. Viral nucleocapsid (N) purified with two protective reagents, 2-mercaptoethanol and L-ascorbic acid, RNA extracted the viral used for genomic analysis. The genome consisting of three single-stranded molecules. open reading frame on complementary strand, located at 3′ end S RNA, encoded N protein. terminus this...

A new virus disease occurred in tomato Shizuoka and Aichi prefectures. The from was transmitted by Bemisia tabaci of B biotype, but not sap. Its narrow host range restricted to five species two families. Geminate particles were observed partially purified preparation infected leaves Datura stramonium. Specific DNA bands detected plants polymerase chain reaction using sets primers designed for component geminiviruses. viruses had extremely high degrees nucleotide sequence similarities (98%)...

Manipulating and tuning nanoparticles by means of optical field interactions is key interest for nanoscience applications in electronics photonics. We report scalable, direct, optically modulated writing nanoparticle patterns (size, number, location) high precision using a pulsed nanosecond laser. The complex arrangement the laser pulse energy polarization with particle size ranging from 60 to 330 nm. Furthermore, we fast cooling-rate induced phase switching crystalline Si amorphous state....

We investigate the impact of gate-stack engineering using W/ZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Al O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> on performance planar-type InGaAs tunneling field-effect transistors (TFETs). It is shown that 1-nm-thick capacitance equivalent thickness (CET) with low leakage current achieved by ZrO dielectric constant around 40 In xmlns:xlink="http://www.w3.org/1999/xlink">0.53</sub>...

Abstract— Ultraweak luminescence generated by sweet potato and nonpathogenic Fusarium oxysporum interactions associated with a defense response was detected photoncounting method using ultrahigh‐sensitive photodetectors. The time‐dependent intensity variation, the spectrum two‐dimensional imaging of ultraweak are indicative to F. oxysporum. production ipomeamarone as phytoalexin means that induced in potato.

1998年1月及び1999年6月に静岡県で,また2001年には佐賀県で施設栽培のトルコギキョウに,葉にえそやえそ輪紋等の症状が発生した.これら発病株からウイルスを分離し,T2, T3, SGA及びSG1分離株を得た.4分離株の汁液接種によりトルコギキョウで原病徴が再現された.T2及びT3分離株の宿主範囲は狭く,13科25種の植物のうちで,3科4種のみに全身感染した.T2及びSG1分離株はミカンキイロアザミウマでは媒介されず,ネギアザミウマのみにより媒介された.発病株を電子顕微鏡で観察した結果,平均粒子径85nmの球状粒子が認められた.DAS-ELISA法でT2及びT3分離株ともにIYSV抗体と強く反応したが,TSWV及びINSV抗体には反応しなかった.4分離株のヌクレオキャプシドタンパク質のアミノ酸配列を解析した結果,T2及びSG1分離株はオランダで発生したIYSVと相同性がそれぞれ97.8%, 97.1%であり,T3及びSGA分離株はブラジルで発生したIYSVとのそれが97.4%,...

Penicillium simplicissimum GP17-2 is a plant growth-promoting fungus (PGPF) and an inducer of systemic defense responses. The mechanisms underlying the effect on reduction cucumber leaf damage caused by anthracnose pathogen Colletotrichum orbiculare were investigated. Cucumber leaves treated with culture filtrate (CF) exhibited clear resistance against subsequent infection C. orbiculare. number size lesions disease reduced in CF-treated plants, comparison that control plants. results showed...

We experimentally demonstrated the formation of type-I energy band alignment in lattice-matched Ge1−x−ySixSny/Ge(001) heterostructures and clarified dependence Si Sn contents on structure. By controlling contents, keeping Si:Sn ratio 3.7:1.0, we formed high-quality Ge1−x−ySixSny pseudomorphic epitaxial layers a Ge substrate with lattice misfit as small 0.05%. The bandgaps layers, measured by spectroscopic ellipsometry, increased to 1.15 eV at 41% 15%, respectively. X-ray photoelectron...

This study investigated changes in low-frequency noise sources associated with short-channel bulk metal-oxide-semiconductor field-effect transistors (MOSFETs) by analyzing random telegraph (RTN) from 300 K down to 3 K. The power spectral density (PSD) of the drain current, which exhibited RTN characteristics frequency domain, changed temperature. In addition, effect temperature on PSD was not monotonic such that peaks were generated at specific temperatures. A comparison between p-type and...

[in Japanese]

A compact non-volatile nano-electro-mechanical memory (NV-NEMory) cell design together with a novel array architecture and operating scheme is proposed for real-time data searching applications. Performance characteristics of vertically oriented NV-NEMory small layout area 8F <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , where F the minimum half-pitch, are investigated by static transient device simulations. Data can be achieved...

We propose a p-channel bilayer TFET composed of an n-type oxide semiconductor (n-OS)/p-type group-IV (p-IV) heterostructure, allowing us to realize both n- and operations under the same device structure. Here, p-IV side in heterostructure has metal-oxide-semiconductor (MOS) gate-stack that modulates surface potential MOS interface controls band-to-band tunneling (BTBT) current p-TFET operation. Technology computer-aided design (TCAD) simulation predicts operation with symmetric electrical...

We have experimentally clarified the origin of low-frequency noise, which limits coherence-time in Si quantum bit (qubit), utilizing cryo-CMOS. At cryogenic temperature (2.5 K), significantly enhanced 1/f noise is observed MOSFETs, while it not seen at room temperature. Interface trap density dependence changing surface orientation, revealed that governed by carrier number fluctuation and we identified interface temperature, for first time. The present study demonstrates experiments using...

This study investigates the origin of low-frequency (LF) 1/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$f$ </tex-math></inline-formula> noise in Si n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs) under cryogenic operation. The fluctuation drain current increased with decreasing temperature, exhibiting LF more than two orders magnitude higher at 2.5 K compared that 300 K. As...

In this paper, we investigated how Sn migrated during annealing for Ge1−xSnx at its surface and in interior, as well the Ge oxide formation on with controlling oxidation. After oxidation 400 °C, X-ray photoelectron spectroscopy diffraction measurements revealed migration from inside epitaxial layer to surface. Annealing was not primary cause of significant migration; rather, it caused mostly by near This process formed a very high content 30%, inducing wide hysteresis loop...

We have investigated the electrical properties of Sn/n-Ge contact and estimated its Schottky barrier height (SBH). prepared metal/n-Ge diodes by Sn, Al, Au deposition on Ge substrates at room temperature. The current density–voltage characteristics Au/n-Ge contacts were measured, SBHs these interfaces to be 0.35, 0.55, 0.59 eV, respectively. SBH increases for samples annealed 150–220 °C. also crystalline structure Sn layer Ge(001) X-ray diffraction analysis examined relationship between...

We demonstrate the low interface trap density at SiGe p-MOS interfaces with TiN/Y <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> gate stacks by employing Trimethylaluminum (TMA) passivation. PMA temperature is optimized to maximize scavenging of GeO xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> . The impact electrode among TiN, Al, Au and W studied for Y /SiGe interfaces. / 450°C...

Consecutive spectral analyses of ultraweak photon emission from sweet potato showing a defense response were conducted to observe the process physiological transition. The spectrum showed drastic transition 2 10 h after inoculation with Fusarium oxysporum, during which intensity increased slowly. was stable 36 inoculation, whereas peaked approximately 20 inoculation. A change in state connected synthesis defense-related substances is suggested as contributing this phenomenon. also detected...

A compact, reconfigurable look-up table (LUT) implemented with an array of nano-electro-mechanical memory cells formed using CMOS back-end-of-line metal layers is proposed. The advantages this LUT architecture over resistive memory- and CMOS-based implementations include faster more energy-efficient operation. Pre-programmed answers can be read out within 1 ns, consuming less than 10 fJ.

Abstract In this study, we propose technologies for the device structure, gate fabrication process, and back-bias-assisted operation of Si spin qubits to realize high robustness two-qubit SWAP against process variations. We performed quantum simulations MOS-type devices verified benefits these on fidelity. clarified that significantly improve variations achieve a 6 σ -yield with 99% fidelity, assuming size fluctuation International Roadmap Devices Systems (IRDS) target 2022. The proposed...

For the first time, we clarified low-frequency noise source of short-channel bulk MOSFETs at cryogenic temperature. We experimentally revealed that, with decreasing temperature, sources transition from inner-oxide traps to interface and then band-edge localized states that have energy levels within a few tenths meV conduction band-edge. This occurs because Fermi level shifts near band, resulting in charge responsible for being filled shallower contributing noise. Determining is critical step...