Mandar A. Kulkarni

ORCID: 0000-0002-7217-8751
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About
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Research Areas
  • ZnO doping and properties
  • Ga2O3 and related materials
  • Advanced Photocatalysis Techniques
  • GaN-based semiconductor devices and materials
  • Copper-based nanomaterials and applications
  • Gas Sensing Nanomaterials and Sensors
  • Electronic and Structural Properties of Oxides
  • Electrocatalysts for Energy Conversion
  • Fuel Cells and Related Materials
  • Advanced Chemical Sensor Technologies
  • Hydrogen Storage and Materials
  • Quantum Dots Synthesis And Properties
  • Conducting polymers and applications
  • Advanced Sensor and Energy Harvesting Materials
  • Iron oxide chemistry and applications
  • Arsenic contamination and mitigation

Chonnam National University
2021-2025

Regional Centre of Advanced Technologies and Materials
2019

Palacký University Olomouc
2019

Considering ongoing research endeavors aimed at developing oxygen evolution cocatalysts (OECs), there is a growing sense of anticipation regarding the potential benefits strategically integrating these OECs with photoanodes. Such an integration holds promise as viable pathway to significantly enhance efficiency solar-assisted water splitting. However, despite considerable efforts directed toward improving solar-to-hydrogen conversion GaN-based photoanodes, remains need for further progress...

10.1021/acs.energyfuels.3c04978 article EN Energy & Fuels 2024-02-19

Herein, we investigated the influence of changing number InGaN/GaN quantum well pairs, optical bandgap tuning, and plasmonic coupling Au nanoparticles (NPs) with multiquantum wells (MQWs) in photoelectrochemical (PEC) water splitting. MQWs displayed a 2-fold improvement photocurrent density applied bias photon-to-current conversion efficiency (ABPE%) as compared to reference GaN at zero bias. Tuning band gap by varying growth temperature has also been shown performance PEC In comparison blue...

10.1021/acsanm.2c05021 article EN ACS Applied Nano Materials 2023-01-09

Abstract GaN nanostructures hold significant promise in advancing nanoscale light‐emitting devices. However, progress remains elusive, possibly due to the absence of innovative approaches. Beyond smaller size nanostructures, main interest lies growing InGaN active layers on semi‐ and non‐polar orientations. Nevertheless, it is evident that while leveraging such a method holds initial promise, this approach may eventually reach its limits, prompting need for fresh perspectives. In manuscript,...

10.1002/adfm.202406467 article EN cc-by-nc-nd Advanced Functional Materials 2024-07-16

Driven by the proliferation of nanoscale optoelectronic devices, achieving precise control over growth GaN nanorods (NRs) has become increasingly important. Selective area (SAG) using pulsed-mode technique demonstrated promising results in its ability to produce NRs with desired dimensions and surface morphology. However, addressing issue nonuniformity, a previously overlooked aspect, remains critical challenge. In this study, we leverage commercial metal–organic chemical vapor deposition...

10.1021/acs.cgd.4c00937 article EN Crystal Growth & Design 2025-01-02

Abstract In this work, an innovative method is introduced for fabricating large‐area micro‐LEDs (µLEDs) specifically green and blue emission through a combination of GaN thin film nanorods (NRs) on the orientation‐controlled template designed its integration into display systems. Herein, advanced lithography technique employed to construct template, with pattern feature regions NRs facilitating wavelength control by utilizing indium incorporation efficiency different crystallographic...

10.1002/adom.202500271 article EN cc-by-nc-nd Advanced Optical Materials 2025-04-18

Photoelectrochemical (PEC) water splitting is a promising approach for the conversion of solar energy into chemical fuels. Increasing surface area and decorating semiconductors with noble metal nanoparticles (NPs) an optimistic to improve PEC efficiency. Herein, we report fabrication efficient reliable photoanode by depositing Au on GaN nanowires (NWs). The NPs/GaN NW exhibited 55% improvement in photocurrent density compared that bare NWs. enhanced performance attributed increased incident...

10.1021/acsaem.1c02486 article EN ACS Applied Energy Materials 2021-12-11

Abstract Rapid development of micro‐electromechanical systems increases the need for flexible and durable piezoelectric nanogenerators (f‐PNG) with high output power density. In this study, a high‐performance, flexible, highly stable f‐PNG is prepared by directly growing Mg‐doped semi‐insulating GaN nanowires (NWs) on 30‐µm‐thick tungsten foil using vapor–liquid–solid growth mechanism. The direct NWs metal extends overall lifetime f‐PNG. significantly enhance performance reducing free...

10.1002/smll.202200952 article EN Small 2022-04-23
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