A5101800053- Ga2O3 and related materials
- ZnO doping and properties
- Advanced Semiconductor Detectors and Materials
- Gas Sensing Nanomaterials and Sensors
- Semiconductor Quantum Structures and Devices
- Photonic and Optical Devices
- Optical and Acousto-Optic Technologies
- Laser-Matter Interactions and Applications
- Advanced Fiber Laser Technologies
- Ferroelectric and Piezoelectric Materials
- Advanced Optical Sensing Technologies
- Microwave Dielectric Ceramics Synthesis
- Acoustic Wave Resonator Technologies
- Nanowire Synthesis and Applications
- Transition Metal Oxide Nanomaterials
- Spectroscopy and Laser Applications
- Superconducting and THz Device Technology
Chinese Academy of Sciences
2007-2024
Institute of Semiconductors
2024
University of Chinese Academy of Sciences
2020-2024
Shanghai Institute of Ceramics
2020
Changchun University of Science and Technology
2011
Changchun Institute of Optics, Fine Mechanics and Physics
2007-2008
Broadband photodetectors (PDs) have garnered significant attention due to their ability detect optical signals across a wide wavelength range, with applications spanning military reconnaissance, environmental monitoring, and medical imaging. However, existing broadband detectors face several practical challenges, including limited detection uneven photoresponse, difficult distinguish multispectral signals. To address these limitations, this study presents self-powered ultra-wide PD based on the Bi
ZnMgO films are prepared by RF magnetron sputtering using a composite target and the Mg composition of samples can be controlled easily even at high growth temperature. The metal?semiconductor?metal photodetector based on wurtzite Zn0.6Mg0.4O film exhibits very low dark current (5?pA |Vbias| = 3?V) UV/visible rejection ratio (more than three orders magnitude). peak responsivity is around 270?nm sharp cutoff wavelength about 295?nm corresponding to absorption edge film.
In this work, MgxZn1−xO (MZO) thin films were grown on quartz by rf magnetron sputtering technology. It was found that MZO possess preferred c-axis orientation and exhibit hexagonal wurtzite structure up to a Mg composition of 44.26 mol%. Furthermore, the band gap determined absorption spectra smaller than theoretical calculation for as-grown film. The blueshifted initially then redshifted with increasing annealing temperature films. reason shift attributed displacement, effusion atoms in...
We have theoretically and experimentally demonstrated the feasibility of achieving ultra-low dark current in CpBnn type detectors based on a double-barrier InAs/GaSb/AlSb type-II superlattice. By employing structure that separates absorption region depletion region, diffusion, recombination, tunneling, surface currents photodetector (PD) been suppressed. Experimental validation has shown detector with diameter 500 µm at bias voltage −0.5 V exhibits density 2.5 × 10−6 A/cm2 operating...
High-performance p-B-n infrared photodetectors based on In0.53Ga0.47As/Ga0.51As0.49Sb type-II superlattices with an Al0.85Ga0.15AsSb barrier InP substrate have been demonstrated. These exhibit 50% and 100% cutoff wavelengths of ∼2.1 μm ∼2.6 μm, respectively. At a bias voltage −100 mV voltage, the device exhibits peak responsivity 0.618 A/W at 2.1 corresponding to quantum efficiency 36.5%. The saturated dark current shot noise limited specific detectivity (D*) 4.12 × 1010 cm·Hz1/2/W (at μm)...
Abstract This paper examines GaSb short-wavelength infrared detectors employing planar PN junctions. The fabrication was based on the Zn diffusion process and temperature optimized. Characterization revealed a 50% cut-off wavelength of 1.73 μ m, maximum detectivity 8.73 × 10 cm·Hz 1/2 /W, minimum dark current density 1.02 −5 A/cm 2 . Additionally, quantum efficiency 60.3% achieved. Subsequent optimization enabled realization 320 256 focal plane array that exhibited satisfactory imaging...