A5054280946- X-ray Diffraction in Crystallography
- Crystallization and Solubility Studies
- Clay minerals and soil interactions
- Calcium Carbonate Crystallization and Inhibition
- Electronic Packaging and Soldering Technologies
- 3D IC and TSV technologies
- Iron oxide chemistry and applications
- Advanced Semiconductor Detectors and Materials
- Geological and Geochemical Analysis
- Electronic and Structural Properties of Oxides
- Semiconductor Quantum Structures and Devices
- Advancements in Solid Oxide Fuel Cells
- Geological and Geophysical Studies
- Soil and Unsaturated Flow
- Minerals Flotation and Separation Techniques
- Mine drainage and remediation techniques
- CO2 Sequestration and Geologic Interactions
- Glass properties and applications
- Geological Studies and Exploration
- Crystallography and molecular interactions
- Methane Hydrates and Related Phenomena
- Hydrocarbon exploration and reservoir analysis
- Mineralogy and Gemology Studies
- Metal Extraction and Bioleaching
- Arsenic contamination and mitigation
Kagoshima University
2009-2024
Pusan National University
2023
Institute of Microelectronics
2017-2020
Agency for Science, Technology and Research
2017-2020
Osaka University
2017
EV Group (Austria)
2014
Kansai Electric Power (Japan)
2004-2012
NEC (Japan)
1992-2009
University of Victoria
2007-2008
Victoria University
2008
Mineralogy and geochemistry of a sulfuric acid spring water with pH 3.37 to 2.89 were investigated verify the formation processes iron minerals effects bacteria on their formation. To estimate solubility schwertmannite, experimental dissolution in 10.0 mM H2SO4 was conducted this data used for geochemical modeling. Experimental incubation containing also performed compared simulated abiotic system evaluate role mineral The seeps through cracks hydrothermally altered andesitic rocks pyrite,...
A 3D packaging technology has been developed for 4 Gbit DRAM. Highly-doped poly-Si through-silicon vias (TSVs) are used vertical traces inside silicon and interconnection between DRAM chips to realize a compatible process. Through optimization of the process conditions layout design, fast filling obtained. The entire was carried out at wafer level by using so-called SMAFTI technology. new bump wiring structure feedthrough interposer (FTI) also fine-pitch low-cost bonding. Simulation transfer...
A multistrata dynamic random access memory (DRAM) vertically integrated with a complementary metal oxide semiconductor (CMOS) logic device using through-silicon vias (TSVs) and unique interposer technology was developed for high-performance, power-efficient, scalable computing. SMAFTI (SMArt chip connection FeedThrough Interposer) technology, featuring an ultra-thin organic high-density feedthrough conductive vias, used interconnecting the three-dimensionally stacked DRAM CMOS ....
For Wafer to Hybrid Bonding (W2W-HB) technology, warpage mitigation and precise Cu bonding are required ensure a robust integrity. This paper documents numerical methodology using the Finite Element Analysis (FEA) tool investigate impact of various design process parameters on two-layer wafer bonding. The risk poor integrity associated with inappropriate selected discussed. attempt this is promote better understanding which could be used establish guidelines for W2W-HB processes.
Microbial biomineralization in a weathered volcanic ash deposit from the 1914 to 1915 A.D. eruption of Sakurajima volcano was investigated by transmission electron microscopy (TEM) and energy dispersive X-ray analysis (EDX). The solution chemistry pore water also analyzed elucidate saturation conditions. In addition, experimental incubations bacteria collected were performed confirm bacterial mineralization. TEM revealed that contains significant amounts spherical rod-shaped ranging 1.3 ×...
A package structure with inter-chip connection is proposed for broadband data transfer and low latency electrical communication between a high-capacity memory logic device interconnected by feedthrough interposer (FTI) featuring fine-wiring pattern ultra-fine-pitch through vias. The FTI formed on silicon wafer using photolithography process to realize fine vias wiring patterns. This enables over thousand connections high pin count in the device. paper describes concept, structure, process,...
We investigate the dynamics of an array polystyrene micron-sized spheres in a dual-beam fiber-optic trap. Experimental results show non-uniform equilibrium particle spacing and spontaneous self-sustained oscillation for large numbers. Results are analyzed with Maxwell- Stress Tensor method using Generalized Multipole Technique, where hydrodynamic interactions between particles included. The theoretical analysis matches well experimentally observed spacing. theory shows that offset trapping...
We present an optohydrodynamic theory to treat optical interactions of particles. When applied dielectric microsphere particles in a dual-beam trap, the explains inhomogeneous self-organization and spontaneous emergence self-sustained oscillations. In presence small-scale symmetry breaking, oscillations are shown occur spontaneously from exchange between scattering gradient forces, absence inertia that is central dynamics ion traps. Experiments provided agree quantitatively with theory. The...
We develop a low-temperature growth technique of epitaxial Ge layers on body-centered-cubic ferromagnetic metal (bcc-FM), Fe3Si, by combining solid phase epitaxy (SPE) and molecular beam (MBE). The insertion an SPE-grown layer enables two-dimensional MBE even at temperature ~175 C. Thanks to the relatively flat surface epilayers, we can obtain CoFe (bcc-FM) top layers, leading all-epitaxial CoFe/Ge/Fe3Si trilayer with reasonable magnetization reversal process. believe that has great...
Transmission electron microscopy (TEM) and energy dispersive X-ray (EDX) analysis were used to characterize naturally weathered layers on the surface of volcanic glass, bytownite, hypersthene, secondary precipitates in ash erupted from Sakurajima volcano, Japan. TEM revealed sharply, bounded, leached glass bytownite that thin structureless coatings mostly ≤0.1 μm thick. EDX showed layer is preferentially depleted Si enriched Al relative its parent matrix, whereas extremely original matrix....
TSV-Free Interposer (TFI) technology eliminates TSV fabrication and reduces manufacturing material cost. Co-design modelling methodology is established for TFI with considering wafer process, package assembly package/board level reliability thermal performance to optimize structure design, process selection. Experimental results are used validating warpage results. Through modelling, suitable carrier EMC materials recommended control less than 2mm. Effects of substrate coefficient expansion...
Wafer-level hybrid bonding with Cu/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> is a very promising technique to fabricate three-dimensional integrated circuits, because it enables high performance operation low power consumption as well 3D stacking costs. For successful process, the particular properties of unstructured Cu-Cu and Si-SiO wafer were investigated. bonding, Cu oxide removal prior one keys success. The combination...