A5010391359- Semiconductor materials and devices
- Quantum-Dot Cellular Automata
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Perovskite Materials and Applications
- Quantum Dots Synthesis And Properties
- 2D Materials and Applications
- Solid-state spectroscopy and crystallography
- Modular Robots and Swarm Intelligence
- Force Microscopy Techniques and Applications
- Graphene research and applications
- Optical properties and cooling technologies in crystalline materials
- Integrated Circuits and Semiconductor Failure Analysis
- MXene and MAX Phase Materials
- Parallel Computing and Optimization Techniques
Technical University of Munich
2023-2024
Center for NanoScience
2021-2022
Ludwig-Maximilians-Universität München
2021-2022
The Silicon Dangling Bond (SiDB) logic platform, an emerging computational beyond-CMOS nanotechnology, is a promising competitor due to its ability achieve integration density and clock speed values that are several orders of magnitude higher compared current CMOS fabrication nodes. However, the exact physical simulation SiDB layouts, which essential component any design validation workflow, computationally expensive. In this paper, we propose novel algorithm called QuickExact, aims be both,...
Semiconductor nanocrystals are receiving increased interest as narrow-band emitters for display applications. Here, we investigate the underlying photoluminescence (PL) linewidth broadening mechanisms in thickness-tunable 2D halide perovskite (Csn-1PbnBr3n+1) nanoplatelets (NPLs). Temperature-dependent PL spectroscopy on NPL thin films reveals a blue-shift of maximum thicker NPLs, no shift three monolayer (ML) thick and red-shift thinnest (2 ML) NPLs with increasing temperature. Emission...
Silicon Dangling Bonds have established themselves as a promising competitor in the field of beyond-CMOS technologies. Their integration density and potential for energy dissipation advantages several orders magnitude over conventional circuit technologies sparked interest academia industry alike. While fabrication capabilities advance rapidly first design automation methodologies been proposed, physical simulation effectiveness has yet to keep pace. Established algorithms this domain suffer...
Silicon Dangling Bonds (SiDBs) on the hydrogen-passivated silicon surface have emerged as a promising competitor in realm of beyond-CMOS computational technologies. They attracted attention academia and industry due to their greatly increased integration density energy efficiency compared contemporary fabrication nodes. Since information propagation computation SiDB domain are based electrostatic field coupling, SiDBs considered room temperature-enabled technology. However, effect...
Silicon Dangling Bonds (SiDBs) constitute a beyond-CMOS computational nanotechnology platform that enables higher integration density and lower power consumption than contemporary CMOS nodes. Recent manufacturing breakthroughs in the domain sparked interest of academia industry alike race for green computation future at nanoscale. However, as fabrication SiDBs requires atomic precision, SiDB logic systems are inherently susceptible to environmental defects material variations, which...
Silicon Dangling Bonds (SiDBs) present a promising computational technology that goes beyond traditional CMOS. It enables the creation of circuitry using single atoms as elementary components. Since contemporary technologies approach their physical limits, SiDBs have attracted significant interest from both academia and industry. allow for gate implementation Boolean functions to realize arbitrary circuit logic. Hence, improvements at level propagate through level. Although fabrication...
Abstract Trap states of the semiconductor/gate dielectric interface give rise to a pronounced subthreshold behavior in field‐effect transistors (FETs) diminishing and masking intrinsic properties 2D materials. To reduce well‐known detrimental effect SiO 2 surface traps, this work spin‐coated an ultrathin (≈5 nm) cyclic olefin copolymer (COC) layer onto oxide hydrophobic acts as passivator. The chemical resistance COC allows fabricate monolayer MoS FETs on by standard cleanroom processes....
Two-dimensional halide perovskite nanoplatelets (NPLs) have exceptional light-emitting properties, including wide spectral tunability, ultrafast radiative decays, high quantum yields (QY), and oriented emission. Due to the binding energies of electron–hole pairs, excitons are generally considered dominant species responsible for carrier transfer in NPL films. To realize efficient devices, it is imperative understand how exciton transport progresses therein. We employ spatially temporally...
Silicon Dangling Bonds have established themselves as a promising competitor in the field of beyond-CMOS technologies. Their integration density and potential for energy dissipation advantages several orders magnitude over conventional circuit technologies sparked interest academia industry alike. While fabrication capabilities advance rapidly first design automation methodologies been proposed, physical simulation effectiveness has yet to keep pace. Established algorithms this domain either...
The Silicon Dangling Bond (SiDB) logic platform, an emerging computational beyond-CMOS nanotechnology, is a promising competitor due to its ability achieve integration density and clock speed values that are several orders of magnitude higher compared current CMOS fabrication nodes. However, the exact physical simulation SiDB layouts, which essential component any design validation workflow, computationally expensive. In this paper, we propose novel algorithm called QuickExact, aims be both,...
Two-dimensional halide perovskite nanoplatelets (NPLs) have exceptional light-emitting properties, including wide spectral tunability, ultrafast radiative decays, high quantum yields (QY), and oriented emission. To realize efficient devices, it is imperative to understand how exciton transport progresses in NPL thin films. Due the binding energies of electron-hole pairs, excitons are generally considered dominant species responsible for carrier transfer. We employ spatially temporally...