A5011890905- Semiconductor Quantum Structures and Devices
- Transition Metal Oxide Nanomaterials
- ZnO doping and properties
- Semiconductor Lasers and Optical Devices
- Photonic and Optical Devices
- Advanced Memory and Neural Computing
- Ga2O3 and related materials
- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Gas Sensing Nanomaterials and Sensors
- Ferroelectric and Negative Capacitance Devices
- Plasmonic and Surface Plasmon Research
- Organic Light-Emitting Diodes Research
- Thin-Film Transistor Technologies
- Advanced Fiber Laser Technologies
- Copper-based nanomaterials and applications
- Neuroscience and Neural Engineering
- Orbital Angular Momentum in Optics
- Solid State Laser Technologies
- Silicon and Solar Cell Technologies
- Semiconductor materials and interfaces
- Metamaterials and Metasurfaces Applications
- Thermal Radiation and Cooling Technologies
- Advanced Antenna and Metasurface Technologies
- Integrated Circuits and Semiconductor Failure Analysis
University of Palermo
2015-2025
University of Catania
2021-2023
Institute for Microelectronics and Microsystems
2023
Ben-Gurion University of the Negev
2009
Infineon Technologies (Germany)
2004-2006
University of Strathclyde
2001-2004
A detailed structural investigation of the semiconductor-to-metal transition (SMT) in vanadium dioxide thin films deposited on sapphire substrates by pulsed laser deposition was performed situ temperature-dependent X-ray diffraction (XRD) measurements. The results are correlated with those infrared radiometry measurements SWIR (2.5-5 μm) and LWIR (8-10.6 spectral ranges. main indicate a good agreement between XRD optical analysis, therefore demonstrating that from monoclinic to tetragonal...
We present structural, morphological, optical and photocatalytic properties of multiferroic Bi0.98Ba0.02FeO3 (BBFO2) perovskite thin films prepared by a combined sol-gel spin-coating method. X-ray diffraction (XRD) analysis revealed that all the consisted stable polycrystalline rhombohedral phase structure (space group R3c) with tolerance factor 0.892. By using Rietveld refinement diffractogram XRD data, crystallographic parameters, such as bond angle, length, atom position, unit cell...
Abstract We investigate the mid-infrared thermo-optical properties of polycrystalline alpha-phase molybdenum trioxide (α-MoO3) thin films grown on fused silica substrates via pulsed laser deposition at 500 °C. By analyzing temperature-dependent reflection spectra, we determine stable and uniquely defined MoO3 constants, dn/dT dk/dT, over a 20-250 °C temperature range. Unlike using other techniques room subsequently annealed, our results demonstrate that enables fabrication reliable thermally...
The resistive switching behaviour observed in microscale memristors based on laser ablated ZnO and VO 2 is reported. A comparison between the two materials reported against an active device size. results show that devices up to 300 × μm exhibit a memristive regardless of size, 100 ZnO‐based have best resistance off/on ratio.
A novel low-loss, single-step-growth 1.3‐µm GaInNAs saturable Bragg reflector mode-locking element has been developed. Combined radial thickness and postgrowth annealing control have permitted a tuning range of 46 nm for passive mode locking to be demonstrated from one wafer. With this structure, stabilized was obtained quasi-cw diode-pumped Nd:YLF Nd:YALO lasers operating at 1314 1342 nm, respectively, with average on-time output powers as much 20 W pulse durations low 22 ps.
The temperature tunability of complex dielectric constants vanadium dioxide (VO2) makes it a promising phase-change material for use in active, dynamic, tunable photonics applications. Specifically, the semiconductor-to-metal phase transition VO2 enables reversible, broadband, and large refractive index variation paves way plethora Although critical phase-transition is 68 °C films, its can be reduced to room by tungsten-doping dioxide. Such degree freedom controlling through tungsten doping...
The development of mid-infrared nanophotonics relies on the availability new materials combining metal- and insulator-like optical features. We systematically studied phase transition thermochromic vanadium dioxide (VO2) using substitutional tungsten doping at room temperature. Our results reveal that thin films, doped with grown via pulsed laser deposition techniques sapphire substrates, can be precisely engineered to exhibit tailored infrared phonon plasmon polaritonic responses. By...
We present a feasibility study for loading cold atomic clouds into magnetic traps created by single-wall carbon nanotubes grown directly onto dielectric surfaces. show that atoms may be captured experimentally sustainable nanotube currents, generating trapped whose densities and lifetimes are sufficient to enable detection simple imaging methods. This opens the way different type of conductor used in atomchips, enabling atom trapping at submicron distances, with implications both fundamental...
The thickness of vanadium dioxide (VO2) films is a crucial parameter for the study their optical and thermal properties. In this paper we studied effect film on hysteresis loop during phase transition VO2 deposited sapphire substrate by pulsed laser deposition (PLD), application Infrared Thermography technique. We measure main parameters samples with different thicknesses in LWIR range (8–14 μm) showing how temperature heating cooling cycles, width loop, may change thickness. analyzed...
A high efficiency white light emitting diode (LED) was fabricated by generation of frequency downconversion from a GaN/InGaN blue LED. In place conventional inorganic phosphors, perylene-based dye used for colour conversion. The resulting hybrid structure is analysed focusing on the visual performance realised LEDs employing most relevant photometric parameters source. Preparation organic polymer described as well. thermal stability investigated and simple which avoids degradation proposed.
Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both energy bandgap and lattice parameter of two semiconductors are favorable to development such devices, other features related electrical structural properties GaN layer prevent an efficient radiative recombination. This work illustrates some advances made ZnO/GaN-based LEDs, by using high-thickness layers for p-region device ad hoc topology....
A GaInNAs/GaAs vertical cavity semiconductor optical amplifier (VCSOA) is reported. This believed to be the first monolithic VCSOA operating at 1.3 µm. Under continuous-wave pumping in a singlemode fibre coupled format, gain figures of up 17.7 dB were achieved. Amplification with 12 GHz bandwidth was obtained 12.8 peak gain.
We report on incorrect carrier type identification achieved by Hall effect measurements performed ZnO films grown pulsed laser deposition InP substrates and subsequently annealed for 1 h at 600 °C in air. While measurements, after post-growth annealing, reveal a change the electrical properties of films, from n-type to p-type, both photocurrent-based standard C−V same samples show no native doping films. A possible interpretation two results is reported. In particular, p-type conductivity...
Photoelectrochemical polymerization of poly(3,4-ethylenedioxythiophene), PEDOT, was successfully realized on anodic film grown to 50 V magnetron sputtered Ti–6 atom % Si alloys. Scanning electron microscopy allowed us evidence formation compact and uniform polymer layers the oxide surface. impedance measurements showed that photopolymerization allows one grow PEDOT in its conducting state, while a strong cathodic polarization is necessary bring p-type semiconducting state. Information...
Hafnium oxide and Nb doped HfO2 were grown by anodizing sputtering-deposited Hf Hf-4at.%Nb. Photoelectrochemical characterization was carried out in order to estimate solid state properties such as band gap, flat potential electrons internal photoemission threshold energy a function of thickness composition anodic oxides. Optical transitions at lower than the gap value investigated films evidenced, they are attributed optical involving localized states inside gap. Such located 3.6 eV 3.9...