Heterojunction solar cell structures employing InGaAsSbN (Eg ∼ 1 eV) base regions are grown lattice-matched to GaAs substrates using metalorganic vapor phase epitaxy. Room temperature (RT) photoluminescence (PL) measurements indicate a peak spectral emission at 1.04 eV and carrier lifetimes of 471–576 ps measured RT from these time-resolved PL techniques. Fabricated devices without anti-reflection coating demonstrate efficiency 4.58% under AM1.5 direct illumination. Solar cells with 250...

High-power single-mode (SM) and multi-mode (MM) InGaAs-AlGaAs strained quantum well lasers are critical components for terrestrial space satellite communications systems. Thus, it is crucial to understand reliability, failure modes, degradation mechanisms of these the high-reliability applications. However, a little has been reported on modes state-of-the-art SM MM (QW) lasers. This study addresses aforementioned issues by performing long-term life tests, mode analysis (FMA), physics (root...

Extensive investigations by a number of groups have identified catastrophic sudden degradation as the main failure mode in both single-mode and multi-mode InGaAs-AlGaAs strained quantum well (QW) lasers. Significant progress made performance characteristics broad-area InGaAs QW single emitters recent years has led to an optical output power over 20W conversion efficiency 70% under CW operation. However, unlike 980nm lasers that shown high reliability operation density ~50MW/cm²,...

Optimization of broad-area InGaAs-AlGaAs strained-quantum-well lasers has led to successful demonstration high power and efficient operation for industrial applications. State-of-the-art single emitters show an optical output over 20W a conversion efficiency 70% under CW operation. However, understanding long-term reliability degradation processes these devices is still poor. This paper investigates the root causes catastrophic in by performing accelerated lifetests failure mode analyses...

We perform measurements which show that focused, picosecond pulses of x-rays can be used to generate single event transients (SET) in a GaAs heterostructure field effect transistor (HFET) and GaN high electron mobility transistor. X-ray with photon energies 8, 10 12 keV from the Advanced Photon Source at Argonne National Laboratory were excite transients. SETs are observed when x-ray incident upon metal layers above sensitive areas on transistors. use focused ion beam (FIB) cross-sectioning...

Two different thermal annealing techniques (rapid (RTA) and in-situ post-growth in the metalorganic vapor phase epitaxy (MOVPE) chamber) were employed to investigate their impact on optical characteristics of double-heterostructures (DH) InGaAsSbN/GaAs performance single-junction solar cell structures, all grown by MOVPE. We find that an optimized RTA procedure leads a similar improvement photoluminescence (PL) intensity compared with material employing multi-step anneal within MOVPE...

State-of-the-art broad-area InGaAs-AlGaAs strained quantum well (QW) lasers show an optical output power of over 20 W and a conversion efficiency 70% under CW operation. Unlike (Al)GaAs QW lasers, InGaAs two failure types including facet catastrophic damage (COD) bulk failure. Optimization passivation processes has led to significant reduction in occurrence COD (or COMD), but COBD) received little attention although it is crucial understand degradation responsible for COBD then develop...

Continued improvements in broad-area InGaAs-AlGaAs strained quantum well (QW) lasers have led to unprecedented performance characteristics these including optical output powers of over 20 W and power conversion efficiencies 70% under CW operation. Catastrophic mirror damage (COMD) is responsible for failures (Al)GaAs QW lasers, but with optimized facet passivation predominantly fail by catastrophic bulk (COBD). Since COBD relatively a new failure type, it requires physics investigation...

Abstract We used deep level transient spectroscopy (DLTS) and HR‐TEM techniques to study traps defects in pre‐ post‐stressed AlGaN/GaN high electron mobility transistors (HEMTs) grown by MOCVD on semi‐insulating SiC substrates. DLTS identified two dominant with activation energies of 0.5 0.7 eV both GaN HEMTs. Electrical stress resulted a significant increase the density traps. This is attributed point (most likely N antisites) AlGaN barrier clearly suggests that these play critical role...

Remarkable progress made in quantum cascade lasers (QCLs) has led them to find an increasing number of applications remote sensing, chemical and free space communications, addition potential applications. However, little been reported on reliability failure modes QCLs although it is crucial understand underlying degradation mechanisms developing that meet lifetime requirements for missions. Focused ion beam (FIB) techniques have employed investigate various types laser diodes. Our group also...

High power single-mode (SM) and multi-mode (MM) InGaAs-AlGaAs strained quantum well (QW) lasers are critical components for both telecommunications potential space satellite communications systems. However, little has been reported on failure modes of state-of-the-art SM QW although it is crucial to understand underlying degradation mechanisms in developing these that meet lifetime requirements systems, where extremely high reliability required. Our present study addresses the aforementioned...

Dilute nitride materials with a 1eV band-gap lattice matched to GaAs substrates are attractive for high-efficiency multi-junction solar cells. Carrier lifetime measurements crucial in optimizing material growth and p-i-n field-aided carrier-extraction-device design. One research group has reported carrier lifetimes of MBE-grown bulk InGaNAsSb materials, but there been no report from grown by MOVPE. In this study, we the MOVPE first measurement MOVPE-grown E_g= 1.0 - 1.2eV at 300K....

Remarkable progress made in performance characteristics and reliability of high-speed (> 10 GHz) 850-nm multi-mode (MM) oxide-confined vertical cavity surface emitting lasers (VCSELs) during the last decade has led them to find applications space satellite systems. The main advantage deploying VCSELs satellites over directly modulated edge is absence COMD (catastrophic optical mirror damage). In recent years, leading VCSEL manufacturers introduced higher speed (~ 20 GHz or 25 Gbps) with...

Vertical Cavity Surface Emitting Lasers are characterized under a high magnification optical microscope for reliability during accelerated aging using Optical Beam Induced Current and Electroluminescence imaging spectroscopy, also with electrical IV characterization. EL image data is captured time resolution device failure, compared to the OBIC images, yielding insight into failure mechanisms. In particular, sudden, localized, permanent reductions in intensity around outside of laser oxide...

Laser diode manufacturers perform accelerated multi-cell lifetests to estimate lifetimes of lasers using an empirical model. Since state-of-the-art laser diodes typically require a long period latency before they degrade, significant amount stress is applied the generate failures in relatively short test durations. A drawback this approach lack mean-time-to-failure data under intermediate and low conditions, leading uncertainty model parameters (especially optical power current exponent)...

Bulk, lattice-matched InGaAsSbN material has been grown by metal organic vapor phase epitaxy (MOVPE) for applications in concentrated multi-junction solar cells. By optimizing the growth conditions high Sb and As partial pressures, we achieved background hole concentrations as low 2 x 10¹⁸ cm^-3. After thermal annealing, concentration increased from 2x10¹⁸ to 1019 cm^-3, although PL intensity a factor of 7. We recently grew single junction (1eV)...

High-power single-mode (SM) and multi-mode (MM) InGaAs-AlGaAs strained quantum well (QW) lasers are critical components for both telecommunications space satellite communications systems. However, little has been reported on failure modes degradation mechanisms of high-power SM MM QW although it is crucial to understand underlying in developing these that meet lifetime requirements systems, where extremely high reliability required. Our present study addresses the aforementioned issues by...

GaAs1−zBiz/GaAs1−yPy strained-compensated quantum well (QW) structures for laser applications were grown by metalorganic vapor phase epitaxy. The band offsets the heterojunction calculated density functional theory, and design of strain-compensated was undertaken zero stress analysis. post-growth thermal annealing dramatically increases photoluminescence intensity compared to that from as-grown GaAs1−zBiz QW samples. Transmission electron microscopy studies verified layer thicknesses as...

Multi-mode InGaAs strained quantum-well single emitters at 920-980nm have become indispensable as pump lasers for various applications. Most previous reports on these been focused their performance characteristics with limited failure mode analysis although understanding the physics of is crucial in developing a proper physics-based lifetime model. Our group recently reported accelerated lifetest results accumulated test hours over 6000 and identified catastrophic sudden failures dominant...