A5082542347- Ferroelectric and Piezoelectric Materials
- Transition Metal Oxide Nanomaterials
- Electronic and Structural Properties of Oxides
- Microwave Dielectric Ceramics Synthesis
- Advanced Memory and Neural Computing
- Semiconductor materials and devices
- Multiferroics and related materials
- Graphene research and applications
- Photorefractive and Nonlinear Optics
- Ferroelectric and Negative Capacitance Devices
- ZnO doping and properties
- Molecular Junctions and Nanostructures
- Magnetic and transport properties of perovskites and related materials
- Advanced Sensor and Energy Harvesting Materials
- Copper-based nanomaterials and applications
- Diamond and Carbon-based Materials Research
- Photonic Crystals and Applications
- Metal and Thin Film Mechanics
- Advanced Materials Characterization Techniques
- Quantum and electron transport phenomena
- Thin-Film Transistor Technologies
- Gas Sensing Nanomaterials and Sensors
- Solid-state spectroscopy and crystallography
- Graphene and Nanomaterials Applications
- Laser-Ablation Synthesis of Nanoparticles
Université de Picardie Jules Verne
2013-2021
Laboratoire de physique de la matière condensée
2021
Gwangju Institute of Science and Technology
2019-2020
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2016-2018
Université Grenoble Alpes
2018
CEA LETI
2018
CEA Grenoble
2018
A large negative electrocaloric effect is demonstrated in an antiferroelectric ZrO<sub>2</sub> thin film with 8 nm thickness deposited by atomic layer deposition.
Chemically doped graphene was used to fabricate a ternary field effect transistor. A p−n junction formed by polymer doping, which sustained after dielectric passivation and thermal annealing processes stabilize the interface. Multiple peaks in I–V curve are evidence of two different doping states channel could be achieved modulated varying concentration ratio portion channel.
Abstract We have studied the resistive switching (RS) phenomenon in series of BiFeO3 thin films thickness 40 – 154 nm deposited by PLD technique on conducting Nb-doped substrate SrTiO3 and with Pt top electrodes. It was found that film demonstrates interface-provided I–V characteristic Schottky diode when applied voltage does not exceed threshold value Vd = 1.3 V. The RS appears as current hysteresis loop during 0 → Vm −Vm sweep cycle, provided maximal stop-voltage is larger than Vd. For...
A touch pressure sensor using a graphene-Si Schottky junction barristor gated with the piezoelectric polymer poly(vinylidenefluoride-co-trifluoroethylene) has been demonstrated that combines high on–off ratio (over 102) and low leakage current characteristics. The performance of this device was optimized by presetting initial Fermi level graphene doping process. Sensing modulation ratios up to 312% were achieved under 3 MPa pressure.
The ferroelectric compound GdK2 Nb5 O15 (GKN) thin film with tetragonal-tungsten-bronze–type structure was grown by pulsed-laser deposition on (001)SrRuO3 /La0.5 Sr0.5 CoO3 /MgO substrate. Using X-ray diffraction analysis we demonstrate that the phase transition temperature in GKN shifted to high temperatures due substrate-induced stress. Impedance spectroscopy investigations show Maxwell-Wagner–type conduction at low frequencies, which leads resistive switching. Oxygen vacancies and effects...
By pulsed laser deposition, lead potassium niobate Pb2KNb5O15 was grown on (001) oriented Gd3Ga5O12 substrate using a platinum buffer layer. The PKN thin films were characterized by X-Ray diffraction and Scanning Electron Microscopy (SEM). dependence of their structural properties as function the deposition parameters studied. It has been found that out plane orientation film depends oxygen pressure used during growth. Indeed, is [001] for low [530] high pressure. For these two orientations,...
The electrical characteristics of Zinc oxide (ZnO) thin-film transistors are analyzed to apprehend the effects oxygen vacancies after vacuum treatment. energy level was found be located near conduction band ZnO, which contributed increase in drain current (ID) via trap-assisted tunneling when gate voltage (VG) is lower than specific associated with trap level. were successfully passivated annealing ZnO ambient. We determined that trap-induced Schottky barrier lowering reduced a subjected...
Resistive Random-Access Memories (ReRAM) are an alternative way to create new memory devices. This is physically possible due the existence in material, of two resistive states clearly discreditable, as a function voltage value and polarity first parameter under control pass from one state another one. However, mechanism resistance switching not simple debate. We present chapter all factors entering process tetragonal tungsten bronze (TTB) type structure oxide thin films deposited by PLD...