A5067609000- ZnO doping and properties
- Chalcogenide Semiconductor Thin Films
- Thin-Film Transistor Technologies
- Gas Sensing Nanomaterials and Sensors
- Copper-based nanomaterials and applications
Huazhong University of Science and Technology
2017-2018
Ministry of Education of the People's Republic of China
2018
Abstract In this study, ZnO‐Bi 2 O 3 ‐based multilayer varistors ( MLV s) cofired with nickel (Ni) inner electrodes were prepared by tape‐casting method. Samples sintered in pure nitrogen (N ) to keep Ni from being oxidized, and then reoxidized air obtain the nonlinear properties (reduction‐reoxidation method). The EDAX results showed that are stable have no evident migration into ceramics when N . influence of reoxidation temperature on microstructures samples studied. at temperatures lower...
It is difficult to dope Al into main grains of ZnO varistor ceramics, especially for small doping amount. Generally, all raw materials including dopant are directly mixed together and sintered ceramics. However, in this direct process, apt stay grain boundaries, almost does not enter grains. This harm the electrical properties varistors. In paper, we proposed a two-step process. Al2O3 powder was first only with part pre-sintered. The pre-sintered other additives such as Bi2O3 rest ZnO. Then...