Maxime Vallet

ORCID: 0000-0002-7769-590X
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About
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Research Areas
  • Photonic and Optical Devices
  • Semiconductor Quantum Structures and Devices
  • Advanced Fiber Laser Technologies
  • Semiconductor Lasers and Optical Devices
  • Advanced Photonic Communication Systems
  • Silicon and Solar Cell Technologies
  • MXene and MAX Phase Materials
  • Semiconductor materials and interfaces
  • Semiconductor materials and devices
  • Thin-Film Transistor Technologies
  • Nanowire Synthesis and Applications
  • Aluminum Alloys Composites Properties
  • solar cell performance optimization
  • Chalcogenide Semiconductor Thin Films
  • Silicon Nanostructures and Photoluminescence
  • Metal and Thin Film Mechanics
  • Advanced Semiconductor Detectors and Materials
  • Optical Coatings and Gratings
  • Electronic and Structural Properties of Oxides
  • Ferroelectric and Piezoelectric Materials
  • Advanced Photocatalysis Techniques
  • Additive Manufacturing Materials and Processes
  • GaN-based semiconductor devices and materials
  • Quantum Dots Synthesis And Properties
  • Acoustic Wave Resonator Technologies

Centre National de la Recherche Scientifique
2015-2025

CentraleSupélec
2021-2025

Université Paris-Saclay
2022-2025

Laboratoire Structures, Propriétés et Modélisation des Solides
2021-2024

Laboratoire de Mécanique Paris-Saclay
2022-2024

Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2020-2023

CEA Paris-Saclay
2020-2023

Centre d’Élaboration de Matériaux et d’Études Structurales
2015-2022

Université de Toulouse
2015-2022

Laboratoire de Mécanique des Sols, Structures et Matériaux
2021

Abstract Downsizing the graphdiyne (GDY) network to shape quantum dots (QDs) will provide attractive optical and electronic properties associated with confinement edge effects. Here, it is demonstrated that defect introduction allow using GDY in donor–acceptor photocatalytic systems for solar‐to‐hydrogen conversion. The defect‐rich QDs (GDYO‐QDs) exhibit a blue‐to‐green excitation‐dependent photoluminescence behavior, demonstrating their ability harvest light over wide energy range....

10.1002/aenm.202401547 article EN Advanced Energy Materials 2024-05-13

In the context of advanced photonics or photovoltaics, monolithic integration high-quality III-V materials as near possible to Si substrate is great interest. Here, authors experimentally and theoretically clarify III-V/Si crystal growth processes. Monodomain 3D islands are observed at early stages AlSb, AlN, GaP epitaxy on Si, independently misfit. It shown that complete wetting cannot be achieved in most systems. Surface/interface contributions free energy variations found prominent over...

10.1103/physrevmaterials.2.060401 article EN Physical Review Materials 2018-06-12

Crystallization of Ge-rich GST leads to phase separation, a characteristic which explains their superior properties for electronic memory devices

10.1039/c9tc02302j article EN Journal of Materials Chemistry C 2019-01-01

The archetypical antiferroelectric, PbZrO3, is currently attracting a lot of interest, but no consensus can be clearly established on the nature its ground state as well influence external stimuli over physical properties. Here, antiferroelectric 45-nm-thick epitaxial thin films PbZrO3 by observing characteristic structural periodicity antiparallel dipoles at atomic scale, combined with clear double hysteresis polarization-electric field response related to antiferroelectric–to–ferroelectric...

10.1063/5.0143892 article EN Applied Physics Reviews 2023-05-04

BiFeO3/LaFeO3 (BFO/LFO) epitaxial superlattices (SLs) with different bilayer thicknesses were grown via pulsed laser deposition on a (001)-SrTiO3 substrate buffered SrRuO3 bottom electrode. Room-temperature X-ray diffraction demonstrated strong structural changes in tuning the thickness while keeping total constant. Superlattices thin periods characterized by an antiferroelectric Pnma-like phase, thick bilayers of SLs more likely to be described mixed state, including rhombohedral...

10.3390/electronics14061117 article EN Electronics 2025-03-12

Ferroelectric materials display exotic polarization textures at the nanoscale that could be used to improve energetic efficiency of electronic components. The vast majority studies were conducted in two dimensions on thin films, can further nanostructured, but very few address situation individual isolated nanocrystals synthesized solution, while such structures open other field applications. In this work, we experimentally and theoretically studied texture ferroelectric barium titanate...

10.1021/acsnano.4c02291 article EN ACS Nano 2024-07-02

The M4F project brings together the fusion and fission materials communities working on prediction of radiation damage production evolution their effects mechanical behaviour irradiated ferritic/martensitic (F/M) steels. It is a multidisciplinary in which several different experimental computational science tools are integrated to understand model complex phenomena associated with formation irradiation induced defects macroscopic target materials. In particular focuses two specific aspects:...

10.1016/j.nme.2021.101051 article EN cc-by-nc-nd Nuclear Materials and Energy 2021-08-08

Abstract This work shows that a large‐scale textured GaP template monolithically integrated on Si can be developed by using surface energy engineering, for water‐splitting applications. The stability of (114)A facets is first shown, based scanning tunneling microscopy images, transmission electron microscopy, and atomic force microscopy. These observations are then discussed in terms thermodynamics through density functional theory calculations. A stress‐free nanopatterned obtained molecular...

10.1002/adfm.201801585 article EN Advanced Functional Materials 2018-05-28

10.1016/j.scriptamat.2023.115645 article EN Scripta Materialia 2023-07-06

Al/CuO energetic structure are attractive materials due to their high thermal output and propensity produce gas. They widely used bond components or as next generation of MEMS igniters. In such systems, the reaction process is largely dominated by outward migration oxygen atoms from CuO matrix toward aluminum layers, many recent studies have already demonstrated that interfacial nanolayer between two reactive layers plays a major role in material properties. Here we demonstrate ALD...

10.1021/acs.langmuir.7b02964 article EN Langmuir 2017-09-26

Spontaneously formed Al-As type interfaces of the InAs/AlSb system grown by molecular beam epitaxy for quantum cascade lasers were investigated atomic resolution scanning transmission electron microscopy. Experimental strain profiles compared to those coming from a model structure. High negative out-of-plane strains with same order magnitude as perfect observed. The effects geometrical phase analysis used determination evidenced and discussed in case abrupt huge variations both composition...

10.1063/1.4952951 article EN Applied Physics Letters 2016-05-23

We propose a novel phase-matching scheme in GaP whispering-gallery-mode microdisks grown on Si substrate combining modal and 4¯ -quasi-phase-matching for second-harmonic-generation. The technique consists unlocking parity-forbidden processes by tailoring the antiphase domain distribution layer. Our proposal can be used to overcome limitations of form birefringence using high order whispering-gallery-modes. frequency conversion efficiency this new demonstrates competitiveness nonlinear...

10.1364/oe.24.014608 article EN cc-by Optics Express 2016-06-20

An optically carried microwave synthesis working at 40 GHz is demonstrated by using a two-frequency solid-state microchip laser inserted as voltage-controlled oscillator inside digital phase-locked loop. We report an in-loop relative frequency stability better than 2.5 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-11</sup> . The capabilities of the are illustrated with different sweeping formats.

10.1109/lpt.2010.2084077 article EN IEEE Photonics Technology Letters 2010-10-08
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