A5033037701- Physics of Superconductivity and Magnetism
- Superconducting and THz Device Technology
- Quantum and electron transport phenomena
- Thermal Radiation and Cooling Technologies
- Metal and Thin Film Mechanics
- Topological Materials and Phenomena
- Thermal properties of materials
- Terahertz technology and applications
- Mechanical and Optical Resonators
- GaN-based semiconductor devices and materials
- Advanced ceramic materials synthesis
- Carbon Nanotubes in Composites
- Magnetic properties of thin films
- Superconductivity in MgB2 and Alloys
- Advanced Thermoelectric Materials and Devices
- Graphene research and applications
- Nuclear materials and radiation effects
- Magnetic and transport properties of perovskites and related materials
- Rare-earth and actinide compounds
- Photonic Crystals and Applications
- Copper Interconnects and Reliability
- Silicon Nanostructures and Photoluminescence
- Electronic and Structural Properties of Oxides
- Spectroscopy and Laser Applications
- Advanced Semiconductor Detectors and Materials
Moscow State Pedagogical University
2015-2024
Lomonosov Moscow State University
2016-2020
Institute of Glass
1980-1991
Abstract We investigate the effect of various fluctuation mechanisms on DC resistance in superconducting (SC) devices based epitaxial titanium nitride (TiN) films. The samples we studied show a relatively steep resistive transition (RT), with width <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"><mml:mrow><mml:mi mathvariant="normal">Δ</mml:mi><mml:mi>T</mml:mi><mml:mrow><mml:mo>/</mml:mo></mml:mrow><mml:msub><mml:mi>T</mml:mi><mml:mrow><mml:mi...
Thin superconducting films are important components of modern low-temperature electronics, and their performance can degrade with decreasing thickness, owing to various factors that often difficult disentangle. The authors analyze material properties, electron-phonon coupling, transport in high-quality epitaxial TiN down 3 nm thickness. thinnest show a reduction the transition temperature by almost factor 3, which is associated minute amount magnetic disorder. In thin scatterers occur...
We consider the carrier transport and plasmonic phenomena in lateral carbon nanotube (CNT) networks forming device channel with asymmetric electrodes. One electrode is Ohmic contact to CNT network another Schottky contact. These structures can serve as detectors of terahertz (THz) radiation. develop model for response which comprise a mixture randomly oriented semiconductor CNTs (s-CNTs) quasi-metal (m-CNTs). The proposed includes concept two-dimensional plasmons relatively dense (CNT...
Nonlocal quasiparticle transport in normal-superconductor-normal (NSN) hybrid structures probes sub-gap states the proximity region and is especially attractive context of Majorana research. Conductance measurement provides only partial information about nonlocal response composed from both electron-like hole-like excitations. In this work, we show how a shot noise delivers missing puzzle piece NSN InAs nanowire-based devices. We demonstrate that trivial superconducting phase practically...
Mesoscopic superconductivity deals with various quasiparticle excitation modes, only one of them -- the charge-mode being directly accessible for conductance measurements due to imbalance in populations quasi-electron and quasihole branches. Other modes carrying heat or even spin, valley etc. currents populate branches equally are charge-neutral, which makes much harder control. This noticeable gap experimental studies mesoscopic non-equilibrium can be filled by going beyond conventional DC...
We report on experimental study of the effect disorder electronic parameters and inelastic scattering mechanisms in ultrathin superconducting NbN films, which are commonly used single-photon detectors. An increase studied 2.5 nm thick films characterized by Ioffe-Regel parameter from 6.3 to 1.6 is accompanied a decrease critical temperature $T_c$ 11.5 K 3.4 K. By measuring magnetoconductance range $\sim3T_c$, we extract rates electrons, including electron-phonon (e-ph) $\tau_{e-ph}^{-1}$....
Despite the intensive development of terahertz technologies in last decade, there is still a shortage efficient room‐temperature radiation detectors. Carbon nanotubes (CNTs) are considered as very promising material possessing many features peculiar for graphene (suppression backscattering, high mobility, etc.) combined with bandgap carrier spectrum. In this paper, we investigate possibility to incorporate individual CNTs into devices that similar Schottky diodes. The latter currently used...
Here we examine the role of amorphous insulating substrate in thermal relaxation thin NbN, InO$_x$, and Au/Ni films at temperatures above 5 K. The studied samples are made up metal bridges on an layer lying or suspended a crystalline substrate. Noise thermometry was used to measure electron temperature $T_e$ as function Joule power per unit area $P_{2D}$. In all samples, observe dependence $P_{2D}\propto T_e^n$ with exponent $n\simeq 2$, which is inconsistent both electron-phonon coupling...
We have measured the electron-phonon energy-relaxation time, τ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eph</sub> , in superconducting boron-doped diamond films grown on silicon substrate by chemical vapor deposition. The observed cooling times vary from 160 ns at 2.70 K to 410 1.8 following a T -2-dependence. data are consistent with values of previously reported for single-crystal epitaxially substrate. Such noticeable slow relaxation...
We present our studies on the evolution of normal and superconducting properties with thickness thin Nb films a low level non-magnetic disorder (k <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">F</sub> l ≈ 150 for thickest film in set). The analysis behavior points to presence magnetic moments, hidden native oxide surface films. Using Abrikosov-Gorkov theory, we obtain density moments 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">13</sup>...
Demand for efficient terahertz (THz) radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution that problem. In this work, we systematically investigate response nanodevices to sub-terahertz using different sensing elements: from dense nanotube (CNT) network individual CNT. We conclude based on CNTs both semiconducting and quasi-metallic demonstrate much stronger sub-THz region than disordered CNT networks at room temperature. also...
Here, we investigate thermal transport and phonon dynamics in the 30-nm thick NbN device. By measuring resistance <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$Z_{\text{2}D}$</tex-math></inline-formula> at temperatures beyond critical temperature notation="LaTeX">$T_{c}$</tex-math></inline-formula> relaxation time notation="LaTeX">$\tau _{R}$</tex-math></inline-formula> vicinity of , obtain parameters...
Here we focus on thermal transport in NbN films, deposited crystalline substrates. Using the noise thermometry, found that relaxation thin films at temperatures above critical superconducting temperature is mainly restricted by boundary resistance, and it can be modified a structural disorder substrate surface. In addition, for thick sapphire substrate, observe occurs diffusive phonon regime when mean free path shorter than film thickness. The findings exploited low-temperature devices based films.
Abstract In this paper, we study terahertz detectors based on single quasimetallic carbon nanotubes (CNT) with asymmetric contacts and different metal pairs. We demonstrate that, depending the contact metallization of device, various detection mechanisms are manifested.
Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution that problem. In this work we investigate response to sub-terahertz graphene field effect transistors two configurations. The devices first type are based on single layer CVD with asymmetric source and drain (vanadium gold) contacts operate lateral Schottky diodes (LSD). second made so-called Dyakonov-Shur configuration which is coupled through a spiral antenna top...
Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution that problem. In this work we investigate response to sub-terahertz with sensor elements based on CVD graphene well its derivatives – nanotubes (CNTs). The devices are made configuration field effect transistors (FET) asymmetric source and drain (vanadium gold) contacts operate lateral Schottky diodes. We show at 300K semiconducting CNTs better performance up...
In this work we investigate the response on THz radiation of a FET device based an individual carbon nanotube conductance channel. It was already shown, that such devices can be either diode rectification origin or thermoelectric effect their combination. demonstrate at 77K and 8K temperatures strong bolometric also makes significant contribution to response.