A5044230338- Semiconductor Quantum Structures and Devices
- Advanced Semiconductor Detectors and Materials
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Quantum Dots Synthesis And Properties
- Nanowire Synthesis and Applications
- Advanced Fiber Laser Technologies
- GaN-based semiconductor devices and materials
- Solid State Laser Technologies
- Chalcogenide Semiconductor Thin Films
- Quantum and electron transport phenomena
- Silicon Nanostructures and Photoluminescence
- Semiconductor Lasers and Optical Devices
- Laser-Matter Interactions and Applications
- Surface and Thin Film Phenomena
- Advanced Data Processing Techniques
- Photonic and Optical Devices
- Topological Materials and Phenomena
- Plasmonic and Surface Plasmon Research
- Photonic Crystals and Applications
- Near-Field Optical Microscopy
- Photonic Crystal and Fiber Optics
- nanoparticles nucleation surface interactions
- solar cell performance optimization
- Economic and Technological Systems Analysis
Kuban State Technological University
2021-2024
Institute of Semiconductor Physics
2014-2023
Russian Academy of Sciences
2014-2023
Siberian Branch of the Russian Academy of Sciences
2000-2020
National Research Tomsk State University
2002
Physico-Technical Institute
2001
A high-power, diode-pumped, semiconductor saturable absorber mode-locked Yb(5%):KGW bulk laser was demonstrated with high optical-to-optical efficiency. Average output power as 8.8 W efficiency of 37.5% obtained for Nm-polarized 162 fs pulse duration and 142 nJ energy at a repetition frequency 62 MHz. For Np polarization, 143 pulses 139 average up to 8.6 31% were generated.
In this work, the formation, structural properties, and energy spectrum of novel self-assembled GaSb/AlP quantum dots (SAQDs) were studied by experimental methods. The growth conditions for SAQDs’ formation molecular beam epitaxy on both matched GaP artificial GaP/Si substrates determined. An almost complete plastic relaxation elastic strain in SAQDs was reached. does not lead to a reduction luminescence efficiency, while introduction dislocations into induced strong quenching luminescence....
Non-truncated pyramidal In(Ga)As quantum dots (QDs) embedded in GaAs were obtained by a combination of low temperature/high rate covering InAs QDs. We use advanced transmission electron microscopy to study the composition and mechanics objects. Results from core region sliced QD, an entire object, are consistent complementary allowing development accurate models describing 3D shape, chemical distribution, elastic strains stresses wetting layer, matrix. The measured structure develops...
The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated this study. effects intermediate LT-GaAs and the post-growth cyclic situ annealing on structural properties GaAs/LT-GaAs/GaAs/Si(001) HSs were studied. It found that introduction layers, combination with annealing, reduced threading density down to 5 × 106 cm-2, root-mean-square roughness surface 1.1 nm, concentration non-radiative recombination centers near-surface regions...
A system of GaAs self-assembled quantum dots (QDs) embedded in GaP matrix was studied by means transmission electron microscopy, steady-state, and transient photoluminescence. Unusually, the QDs are fully unstrained but they have no nonradiative centers introduced dislocations at GaAs/GaP heterostructure. The band alignment is shown to be type I.
Mode-locking at repetition rate of 70 MHz with 115 fs spectral-limited pulses was obtained in Yb3+:KY(WO4)2 laser low loss saturable absorber. Special design and manufacture absorber incorporating InGaAs quantum wells separated by nanostructured barriers a wide band total reflector resulted the semiconductor absorption mirror (SESAM) short recovery time non-saturable losses. This permitted to receive average output power 1.57 W mode-locking regime close 1.62 continuous-wave regime.
The atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures were studied. It was shown that the deposition GaAs same nominal thickness leads to formation pseudomorphic GaAs/GaP quantum wells (QW), fully relaxed self-assembled dots (SAQDs), or GaAsP/GaP SAQDs depending on growth temperature. We demonstrate is ruled by temperature dependence adatom diffusion rate GaAs-GaP intermixing. band alignment QW be type II, in contrast SAQDs, which have I with lowest electronic states at...
A stable mode-locking regime at a repetition rate of 70 MHz with 5 W average power, maximum output pulse energy about 71 nJ, and duration 114 fs were obtained in an Yb:KY(WO4)2 laser longitudinal 'off-axis' diode pumping. Optical-to-optical efficiency was as high 33.3%. semiconductor saturable absorber including quantum wells nanostructured barriers designed manufactured for this laser.
Microstructure of GaAs films grown by molecular-beam epitaxy at low temperature and delta doped with Sb was studied transmission electron microscopy. The material contained 0.5 at. % excess arsenic that precipitated during post growth anneals. δ doping found to strongly affect the microstructure precipitates (clusters) their ripening rate upon annealing. Segregation impurity in clusters revealed. In contrast well known pure As clusters, As–Sb induced strong local deformations surrounding...
We experimentally investigate Andreev transport through the interface between an indium superconductor and edge of InAs/GaSb bilayer. To cover all possible regimes spectrum, we study samples with 10 nm, 12 14 nm thick InAs quantum wells. For trivial case a direct band insulator in 10~nm samples, differential resistance demonstrates standard reflection. structures inversion (12~nm samples), observe distinct low-energy structures, which regard as evidence for proximity-induced...
Low-temperature grown GaAs films with indium delta layers are studied by transmission electron microscopy. The in the as-grown film found to be as thick four monolayers (ML) independently of a nominal In deposit 0.5 or 1 ML, thickness which reflects surface roughness during low-temperature growth. A pronounced In–Ga intermixing is observed subjected 500–700 °C isochronal anneals. interdiffusion diffusivity evaluated. effective activation energy for 1.1±0.3 eV significantly smaller than value...
Delta doping with antimony isovalent impurity has been employed as a precursor for two-dimensional precipitation of excess arsenic in GaAs grown by molecular-beam epitaxy at low substrate temperature (LT-GaAs), and subsequently annealed. LT-GaAs films delta doped indium showed previously to provide As cluster sheets were studied comparison. Small clusters observed transmission electron microscopy the Sb layers had an unusual lens shape and, probably, nonrhombohedral microstructure. These...
As–Sb compositional intermixing was studied by transmission electron microscopy (TEM) in GaAs films grown molecular-beam epitaxy at low temperature (LT) and δ doped with antimony. The TEM technique calibrated imaging the as-grown layers containing various amounts of Sb. calibration allowed us to deduce effective interdiffusion coefficient from apparent thickness Sb subjected isochronal anneals 400–600 °C. LT found be much enhanced when compared conventional material. Its dependence yields a...
The shortening of the absorption recovery time by a factor more than 50 is observed for semiconductor nanostructure consisting ten GaAs/In x Ga1-x As/GaAs quantum wells irradiated with nanosecond pulses XeCl laser.A possible reason such significant variation in optical properties lies generation point defects,which are responsible recombination charge carriers.The result can be employed UV photomodification nanostructures.
Цель работы: исследование статистических различий обучающих данных, используемых для реализации субъектонезависимого и субъектозависимого подходов к обнаружению синтезированного голоса при противодействии спуфинг-атакам на системы распознавания личности по голосу