A5052695646- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
- Photonic and Optical Devices
- Advanced Semiconductor Detectors and Materials
- Silicon Nanostructures and Photoluminescence
- GaN-based semiconductor devices and materials
- Surface and Thin Film Phenomena
- Photonic Crystals and Applications
- Semiconductor materials and devices
- Nanowire Synthesis and Applications
- Microstructure and mechanical properties
- Thin-Film Transistor Technologies
- Chalcogenide Semiconductor Thin Films
- ZnO doping and properties
- Metal and Thin Film Mechanics
- Ga2O3 and related materials
- Gas Sensing Nanomaterials and Sensors
- Semiconductor Lasers and Optical Devices
- X-ray Diffraction in Crystallography
- Transition Metal Oxide Nanomaterials
- Crystallography and Radiation Phenomena
- Advanced Theoretical and Applied Studies in Material Sciences and Geometry
- Photocathodes and Microchannel Plates
- Advanced Mathematical Modeling in Engineering
- Geological Studies and Exploration
Institute of Semiconductor Physics
2015-2025
Russian Academy of Sciences
2013-2024
Siberian Branch of the Russian Academy of Sciences
2014-2021
Abstract Structural and photoelectric properties of p-i-n photodiodes based on GeSiSn/Si multiple quantum dots both Si silicon-on-insulator (SOI) substrates were investigated. Elastic strained state grown films was demonstrated by x-ray diffractometry. Annealing structures before the mesa fabrication can improve ideality factor current-voltage characteristics. The lowest dark current density at reverse bias 1 V reaches value 0.8 mA/cm2. cutoff wavelength shifts to long-wavelength region with...
Structural and photoelectric properties of p-i-n photodiodes based on GeSiSn/Si multiple quantum dots both Si silicon-on-insulator (SOI) substrates were investigated. Elastic strained state grown films was demonstrated by x-ray diffractometry. Annealing structures before the mesa fabrication can improve ideality factor current-voltage characteristics. The lowest dark current density at reverse bias 1 V reaches value 0.8 mA/cm2. cutoff wavelength shifts to long-wavelength region with Sn...
The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated this study. effects intermediate LT-GaAs and the post-growth cyclic situ annealing on structural properties GaAs/LT-GaAs/GaAs/Si(001) HSs were studied. It found that introduction layers, combination with annealing, reduced threading density down to 5 × 106 cm-2, root-mean-square roughness surface 1.1 nm, concentration non-radiative recombination centers near-surface regions...
The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of morphological film states in temperature range 150 °C-450 °C at tin content from 0% to 35% built. phase diagram superstructural change surface Sn grown annealing 0 °C-850 was established. specular beam oscillations first obtained during 300 up 35%. transmission electron microscopy x-ray diffractometry data confirm crystal perfection pseudomorphic state, also presence smooth heterointerfaces...
High-quality Pb<sub>2</sub>MoO<sub>5</sub> crystals have been grown by the LTG Cz method.
Abstract Nanostructured SnO(x) films were obtained by molecular beam epitaxy (MBE). The morphology, structure, and optical properties of annealed in the temperature range 200 °C–1000 °C studied. reflection high-energy electron diffraction during film deposition MBE method x-ray phase analysis showed that initial are polycrystalline phase. A single orthorhombic SnO 2 was for first time after annealing air at a about 500 °C. sharp change constants near established using ellipsometry....
GaAs films with low-temperature (LT-GaAs) layers were grown by molecular beam epitaxy (MBE) method on vicinal (001) Si substrates oriented 6° off towards [110]. The structures different the thickness of LT-GaAs and its arrangement in film. processes epitaxial nucleation growth controlled reflection high energy electron diffraction (RHEED) method. Investigations crystalline properties carried out methods X-ray (XRD) transmission microscopy (TEM). perfection without ones was comparable. It...
Abstract Dislocations in heterostructures CdTe/ZnTe/GaAs(013) and CdTe/ZnTe/Si(013) were investigated using selective etching transmission electron microscopy. The calculations of critical film thickness h c fulfilled for 12 various slip systems, the experimental results obtained 4 them. Misfit dislocations are introduced a ZnTe at stage formation first monolayers. With their introduction, crystal lattices substrate unfold relative each other that is confirmed by X‐ray diffraction...