A5082860891- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and devices
- ZnO doping and properties
- Acoustic Wave Resonator Technologies
- Quantum and electron transport phenomena
- Metal and Thin Film Mechanics
- Graphene research and applications
- Semiconductor materials and interfaces
- nanoparticles nucleation surface interactions
- Silicon Nanostructures and Photoluminescence
- Advanced Semiconductor Detectors and Materials
- Ion-surface interactions and analysis
- Photocathodes and Microchannel Plates
- Surface and Thin Film Phenomena
- Molecular Junctions and Nanostructures
- Chalcogenide Semiconductor Thin Films
- Electron and X-Ray Spectroscopy Techniques
- Advancements in Semiconductor Devices and Circuit Design
- Nanowire Synthesis and Applications
- Quantum Information and Cryptography
- Plasma Diagnostics and Applications
- Magnetic properties of thin films
- Physics of Superconductivity and Magnetism
Institute of Semiconductor Physics
2015-2024
Russian Academy of Sciences
2015-2024
Siberian Branch of the Russian Academy of Sciences
1998-2019
Novosibirsk State University
2016
Texas Tech University
2009-2012
Institute of Semiconductors
2009
The polytypism phenomenon in the growth of nanostructures reveals new properties and opportunities for bandgap engineering by enabling controlled formation different phases same material with distinct crystalline...
Abstract Kinetics of a two‐dimensional (2D) AlN layer formation on (0001) sapphire (Al 2 O 3 ) surface during nitridation at different ammonia fluxes is investigated by reflection high energy electron diffraction (RHEED). The process the described in framework chemical reactions kinetic model including interaction between partially reduced aluminum oxide species (AlO) and chemisorbed NH particles. experimentally determined rates as functions both temperature pressure are successfully simple...
The effects of surface passivation effect on electron mobility and crystal structure in Al 0.3 Ga 0.7 N/AlN/GaN heterostructures are investigated by classical Hall measurements an X‐ray diffraction method. with different doping layer structures were grown molecular beam epitaxy or without growing situ SiN layer. carried out as a function temperature the range between T = 1.82 K 270 at fixed magnetic field dark conditions. barrier replacing AlN inter‐layer AlGaN GaN layer, where...
Abstract We report time‐resolved and temperature‐dependent photoluminescence investigations of 2 eV band in AlN with below bandgap excitation. Series the samples grown by molecular beam epitaxy on sapphire substrates varying growth conditions have been studied. Intensity has found to increase increasing III/V flux ratio. The described one‐dimensional configuration coordinate model. A possible origin this orange emission discussed. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
The origin of the contrast appearing in STM images at boundary between diverse ordered structures is studied using example two structures, (7 × 7)N and (8 8), formed system a two-dimensional silicon nitride layer on Si(111) surface during ammonia nitridation. A significant dependence these voltage applied to tunnel gap was found both experimentally theoretically. Variations were quantitatively range from −3 V +3 V, they more detail for positive biases sample +1 +2.5 where changed than 2...
We demonstrate local phonon analysis of single AlN nanocrystals by two complementary imaging spectroscopic techniques: tip-enhanced Raman scattering (TERS) and nano-Fourier transform infrared (nano-FTIR) spectroscopy.
The onset of AlN nucleation on Si(111) and Si(110) surfaces during gas source molecular beam epitaxy with ammonia was carried out by reflection high energy electron diffraction. Exposing the clean Si to NH3 flux at 600 °C yields formation crystalline Si3N4 both (111) (110) surfaces. An 8×8 structure observed for surface. On surface a 2.87 Å periodic directed along [001] azimuth 2.46 [1¯12] azimuth. Together, these structures confirm (0001) plane
Abstract 2D and 3D nucleation kinetics of GaN on (0001)AlN was experimentally studied. The rate is decreased with increasing substrate temperature an activation effective energy estimated as E eff ≈ 1 eV. Standard equation analysis used for description the nucleation. critical nucleus size i (single‐atom Ga top a island). A multilayer structure QDs in AlN matrix fabricated. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
The polarity type, surface morphology, electrical properties, and deep trap spectra were studied for undoped AlxGa1−xN films (x=0–0.6) grown by molecular beam epitaxy on on-axis (0001) sapphire using composite buffers consisting of low temperature (LT) AlN nucleation layer, AlN, AlN/AlGaN superlattice. It is shown that the grow with N-polarity if LT layer deposited under N-rich conditions Ga-polarity layers Al-rich conditions. For both polarities film morphology was acceptable fabrication...
Abstract Influence of temperature on AlN formation (0001) Al 2 O 3 surface under ammonia flux (nitridation process) has been investigated by high‐energy electron diffraction. A significant dependence rate in the range 850‐940 °C found whereas is almost constant at temperatures higher than 940 °C. kinetic scheme reactions developed. The values constants for low are found: k 1 P=6×10 4 exp(‐1.5eV/kT), =7×10 19 exp (‐5.3eV/kT), =3×10 13 exp(‐4eV/kT). For high process described as a phase...