Subhananda Chakrabarti

ORCID: 0000-0002-8459-0890
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About
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Research Areas
  • Semiconductor Quantum Structures and Devices
  • Advanced Semiconductor Detectors and Materials
  • Quantum Dots Synthesis And Properties
  • Perovskite Materials and Applications
  • Solid-state spectroscopy and crystallography
  • ZnO doping and properties
  • Ga2O3 and related materials
  • Chalcogenide Semiconductor Thin Films
  • Semiconductor Lasers and Optical Devices
  • GaN-based semiconductor devices and materials
  • Conducting polymers and applications
  • Advanced Photocatalysis Techniques
  • Optical properties and cooling technologies in crystalline materials
  • Semiconductor materials and devices
  • Copper-based nanomaterials and applications
  • Advanced Memory and Neural Computing
  • Nanowire Synthesis and Applications
  • Acoustic Wave Resonator Technologies
  • Photonic and Optical Devices
  • Electronic and Structural Properties of Oxides
  • Gold and Silver Nanoparticles Synthesis and Applications
  • Spectroscopy and Laser Applications
  • Thermal Expansion and Ionic Conductivity
  • Gas Sensing Nanomaterials and Sensors
  • Luminescence Properties of Advanced Materials

Indian Institute of Technology Bombay
2014-2025

The metal trihalide perovskite material has been studied due to its promising and outstanding optoelectronic properties. This study reveals that reduced graphene oxide (rGO) makes a nanocomposite with CsSnBr3 it the potential for making efficient solar cells (PSCs). rGO is very stable tunable electronic For this reason, incorporation of shows inconsistent ambiguous results. crystal structure pristine rGO/CsSnBr3 characterized by X-ray diffraction (XRD). rGO's into improves absorption...

10.1021/acsaelm.3c00224 article EN ACS Applied Electronic Materials 2023-05-22

The lead-free metal halide perovskite materials are a potential candidate for optoelectronics and photovoltaic applications due to their promising outstanding properties.

10.1039/d2tc04586a article EN Journal of Materials Chemistry C 2023-01-01

Abstract In the current work, thin film (∼55 nm) of n-type Ga 2 O 3 (n-Ga ) is deposited on silicon (p-Si) substrate by using radio-frequency (RF) sputtering technique with systematic temperature variations (room to 700 °C). The structural, optical properties and chemical states elements films are observed depend significantly deposition temperatures. composition oxidation states, properties, defect structural quality investigated in detail employing x-ray photoelectron spectroscopy, energy...

10.1088/1361-6463/ac9b69 article EN Journal of Physics D Applied Physics 2022-10-19

Fiber-reinforced composites have become the material of choice for aerospace structures because their favorable strength-to-weight ratio. Given increasing amounts counterfeit composite parts showing up in complex supply chain, it is absolutely vital to track a part throughout its lifecycle—from production usage and disposal. Existing barcoding methods are invasive, affect structural properties composites, and/or vulnerable tampering. We describe universal method store information...

10.1021/acsami.0c05314 article EN ACS Applied Materials & Interfaces 2020-05-22

Perovskite materials hold promise for photovoltaic use due to their high efficiency, low cost, and versatility. However, challenges remain, including stability environmental impact, but potential transform solar energy is significant. Lead-based perovskites have significantly boosted power conversion efficiency in photovoltaics, going from 3.8% 33.3% recent years. perovskite toxicity issues, sensitivity light, heat, moisture. Researchers are working on addressing these concerns, they remain...

10.1117/12.3013286 article EN 2024-01-25

Abstract Phosphorus doping induced p-type in ZnO thin films based on spin-on dopant (SOD) process is reported this article. Owing to the reduced dependence conventional amenities for diffusion/ion-implantation doping, SOD provides a simple and cheap method. The effect of temperature conductivity investigated by altering from 700°C 1000°C. Systematic field emission scanning electron microscopy analysis demonstrates impact morphological properties SOD. x-ray diffraction measurements reveal...

10.1088/1361-6463/ac85fe article EN Journal of Physics D Applied Physics 2022-08-02

Multiple stacking of sub-monolayer (SML) quantum dot (QD) heterostructure exhibits high optical quality and is seen in devices like lasers diodes, photodetectors, etc. In this study, we have investigated the material characterization InAs/InGaAs SML with multiple layers (nSML) on GaAs substrates. The experimentally calculated PL emission energies were found to be 1.19, 1.13, 1.11 1.12 eV for 4, 6, 8 10 QD stacks at 19 K, excitation power 1.1 kW/cm <sup...

10.1109/tnano.2020.3009597 article EN IEEE Transactions on Nanotechnology 2020-01-01

This work presents the impact of barrier spacer on structural and optical properties strain-coupled Stranski-Krastanov (SK) Sub Monolayer (SML) quantum dot (QD) heterostructures. Various ternary quaternary materials have been employed as layer SK-SML QD In coupled QDs, residual strain propagates from SML seed towards top SK dots, introducing defects dislocations. After employing (GaAs <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-y</sub> Sb...

10.1109/tnano.2023.3276210 article EN IEEE Transactions on Nanotechnology 2023-01-01

We developed a stable and reproducible p-type P:ZnO thin film using cost-effective solution-derived spin-on-doping (SOD) technique. created pure p-n heterojunction by depositing highly transparent Ga <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text{2}}$</tex-math> </inline-formula> O notation="LaTeX">$_{\text{3}}$</tex-math> on for photodetector applications. The films’ surface morphology thickness...

10.1109/ted.2023.3332306 article EN IEEE Transactions on Electron Devices 2023-11-30

The modulating nature of doping in oxide-based semiconductors has always been an area interest as it resulted numerous technological developments. On working with ZnO, the principal challenge faced its realistic utilization optoelectronic material lies default n-type due to presence native defects. Thus, achieving p-type behavior a tedious job, and considerable efforts have made over past couple decades. incorporation monodopants yielded ZnO unstable reliability, thus spurring research on...

10.1021/acsaelm.8b00082 article EN ACS Applied Electronic Materials 2019-02-22

The authors report a detailed analysis of an epitaxial growth technique for indium arsenide (InAs) Quantum-dot infrared photodetectors circumvent the detrimental effects arising from progressively increasing dot-size in vertically coupled heterostructures. Constant overgrowth percentage dot-layers has been achieved with implementation strategy, which validated by cross-sectional transmission electron microscopy (X-TEM) images samples. optical characteristics these samples have analyzed...

10.1021/acsaelm.0c00054 article EN ACS Applied Electronic Materials 2020-04-08

In this article, wee have performed a density functional theory-based computational experiment to gain insight into stability issues in host CsPbI <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> and attempted doping Mn as dopant element stabilize its phase. The obtained results throw light on various useful parameters like lattice structure, electronic band, absorption coefficient, photoluminescence (PL). optimized parameter values of...

10.1109/jphotov.2022.3144098 article EN IEEE Journal of Photovoltaics 2022-02-02

Materials such as perovskites that have a widebandgap emerge potential candidate for the next-generation optical and photovoltaic devices. But these interesting semiconducting materials not been investigated theoretically in notable amount to date. Here, computer-based experiments performed describe various fascinating behavior of nanoparticles (NPs) structural, electronic, photophysical based on CsPbBr <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...

10.1109/jphotov.2020.3005210 article EN IEEE Journal of Photovoltaics 2020-07-20

The non-toxic metal halide-based perovskite materials can be a greener alternative to leadbased perovskites because of their stability and high-scale production. Herein, we have tuned the structural photophysical behaviour CsSnCl<sub>3</sub> by forming heterostructure with reduced graphene oxide (rGO) owing its high carrier mobility thermal conductivity. crystal structure CsSnCl<sub>3</sub>/rGO has been analyzed using X-ray diffraction (XRD) technique which confirms formation highly...

10.1117/12.2648289 article EN 2023-01-26
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