A5054400789- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Photonic and Optical Devices
- Semiconductor Quantum Structures and Devices
- 2D Materials and Applications
- Nanowire Synthesis and Applications
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Ga2O3 and related materials
- MXene and MAX Phase Materials
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor Lasers and Optical Devices
- GaN-based semiconductor devices and materials
- Ferroelectric and Negative Capacitance Devices
- Chalcogenide Semiconductor Thin Films
- Advanced Semiconductor Detectors and Materials
- Silicon Carbide Semiconductor Technologies
- Biosensors and Analytical Detection
- Electronic and Structural Properties of Oxides
- Ion-surface interactions and analysis
- ZnO doping and properties
- 3D IC and TSV technologies
- Chronic Myeloid Leukemia Treatments
- Silicon Nanostructures and Photoluminescence
- Terahertz technology and applications
National Institute of Advanced Industrial Science and Technology
2015-2024
Chengdu University of Traditional Chinese Medicine
2023-2024
National Yang Ming Chiao Tung University
2017-2024
Jinzhong University
2024
Chung Yuan Christian University
2023
Beijing Institute of Graphic Communication
2020-2023
GS Caltex (South Korea)
2023
University of California, Davis
1996-2022
University of California, Los Angeles
1995-2022
China Medical University
2022
In this study, a new type of field-effect transistor (FET)-based biosensor is demonstrated to be able overcome the problem severe charge-screening effect caused by high ionic strength in solution and detect proteins physiological environment. Antibody or aptamer-immobilized AlGaN/GaN electron mobility transistors (HEMTs) are used directly proteins, including HIV-1 RT, CEA, NT-proBNP CRP, 1X PBS (with 1%BSA) human sera. The samples do not need any dilution washing process reduce strength....
We report on the fabrication and electrical properties of amorphous (α-)InGaZnO4 thin-film transistors deposited cellulose paper by sputtering at room temperature. The 150-μm-thick was used as both a gate dielectric substrate for device structural support. were patterned lithography operated in enhancement mode with threshold voltage 3.75 V, exhibited saturation mobility, subthreshold gate-voltage swing, drain current on-to-off ratio ∼35 cm2 V−1 s−1, 2.4 V decade−1, ∼104, respectively. These...
Abstract Two-dimensional (2D) transition-metal dichalcogenides have attracted a considerable amount of attention because their potential for post-silicon device applications, as well exploring fundamental physics in an ideal 2D system. We tested the chemical vapour deposition (CVD) WS 2 using gaseous precursors WF 6 and H S, augmented by Na-assistance method. When Na was present during growth, process created triangle-shaped crystals that were 10 μm size exhibited semiconducting...
The control of crystal polymorphism and exploration metastable, two-dimensional, 1T′-phase, transition-metal dichalcogenides (TMDs) have received considerable research attention. 1T′-phase TMDs are expected to offer various opportunities for the study basic condensed matter physics its use in important applications, such as devices with topological states quantum computing, low-resistance contact semiconducting TMDs, energy storage devices, hydrogen evolution catalysts. However, due high...
Hexagonal-phase single-crystal Gd2 O3 is deposited on GaN in a molecular beam epitaxy system. The dielectric constant about twice that of its cubic counterpart when InGaAs or Si. capacitive effective thickness 0.5 nm hexagonal perhaps the lowest GaN-metal-oxide-semiconductor devices. heterostructure thermo dynamically stable at high temperatures and exhibits low interfacial densities states after high-temperature annealing.
Inversion n-channel GaN metal-oxide-semiconductor field-effect-transistors (MOSFETs) using atomic-layer-deposited Al2O3 as a gate dielectric have been fabricated, showing well-behaved drain I-V characteristics. The current was scaled with length (varying from 1to16μm), maximum of ∼10mA∕mm in device 1μm length, at voltage 8V and 10V. At 0.1V, high Ion∕Ioff ratio 2.5×105 achieved very low off-state leakage 4×10−13A∕μm. Both MOSFET MOS capacitor showed densities 10−8A∕cm2 biasing fields 4MV∕cm....
Abstract Two‐dimensional transition metal dichalcogenides (TMDCs) demonstrate great potential in nanoelectronics devices owing to their high carrier mobility the atomically thin channel regime. However, contact resistance between source/drain electrodes and TMDC channels hinders TMDCs applications very‐large‐scale integration (VLSI) field. Here, this work reports aligned van der Waals (vdW) junction fabrications through thermal‐induced crystallization of layered Sb 2 Te 3 on monolayer MoS...
Amorphous (α-)InGaZnO4 thin film transistors (TFTs) were fabricated on polyimide clean-room tape at low temperature (<100 °C). The α-InGaZnO4 films with an n-type carrier concentration of ∼1016 cm−3 deposited by rf-magnetron sputtering in a mixed ambient Ar/O2. bottom-gate-type TFTs showed good saturation mobility (∼5.3 cm2 V−1 s−1), drain current on-to-off ratio approximately 105, threshold voltage 1.1 V, and subthreshold gate-voltage swing 0.55 V decade−1. These results comparable...
In-situ ultrahigh-vacuum-deposited Y2O3 2–3-monolayer-thick on freshly grown In0.53Ga0.47As with an Al2O3 cap were employed as a gate dielectric. A low interfacial density of states (8–9)×1011 eV-1 cm-2 near the midgap has been measured using conductance method. The strong Y2O3/InGaAs bonding, revealed X-ray photoelectron spectroscopy, enables attainment atomically smooth interface 750 °C annealing. Low subthreshold swing 97 mV/decade, high drain current 1.5 mA/µm, transconductance 0.77...
Self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors (MOSFETs) have been fabricated using the gate dielectrics of in-situ directly atomic-layer-deposited (ALD) HfO2 followed by ALD-Al2O3. There were no surface pretreatments and interfacial passivation/barrier layers prior to ALD. TiN/Al2O3 (4 nm)/HfO2 (1 nm)/In0.53Ga0.47As/InP MOS capacitors exhibited well-behaved capacitance-voltage characteristics with true inversion behavior, low leakage current...
Inversion-channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) have been fabricated using in-situ molecular beam deposited Al2O3 as a gate dielectric directly on freshly epitaxy grown Ga-stabilized (4 × 6) and As-covered c(4 4) GaAs(100) reconstructed surfaces. The MOSFET the former surface gives drain current (Id) of 92 μA/μm transconductance (Gm) 43 μS/μm in an 1 μm length configuration; these values are more than 100 times higher those attained latter surface, which has Id...
An integrated microfluidic system capable of detecting live bacteria from clinical periprosthetic joint infection (PJI) samples within 55 minutes was developed in this study.
The fabrication of high-performance Ge nMOSFET and pMOSFET by using the ion implantation after germanidation (IAG) technique is demonstrated. TaN/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /GeO deposited as a common gate stack for low-temperature gatefirst process. Both exhibited high I xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> /I...