Raúl C. Muñoz
A5014920905- Surface and Thin Film Phenomena
- Copper Interconnects and Reliability
- Semiconductor materials and devices
- Particle physics theoretical and experimental studies
- High-Energy Particle Collisions Research
- Magnetic properties of thin films
- Quantum Chromodynamics and Particle Interactions
- Radiation Detection and Scintillator Technologies
- Spectroscopy and Quantum Chemical Studies
- Surface Roughness and Optical Measurements
- Particle Detector Development and Performance
- Electron and X-Ray Spectroscopy Techniques
- Atomic and Subatomic Physics Research
- Advanced Chemical Physics Studies
- Quantum and electron transport phenomena
- Force Microscopy Techniques and Applications
- Quantum, superfluid, helium dynamics
- Nuclear Physics and Applications
- Electrochemical Analysis and Applications
- Atomic and Molecular Physics
- Neutrino Physics Research
- Mechanical and Optical Resonators
- Phase Equilibria and Thermodynamics
- Theoretical and Computational Physics
- Radiation Effects in Electronics
University of Chile
2002-2021
University of Bío-Bío
2021
Direccion General de Epidemiologia
2008
Dirección de Investigación y Desarrollo
2008
European Organization for Nuclear Research
1988-2002
University of Alabama
1992
National Institute for Subatomic Physics
1991
RWTH Aachen University
1991
CEA Paris-Saclay - Etablissement de Saclay
1991
Queen Mary University of London
1990
We discuss recent progress regarding size effects and their incidence upon the coefficients describing charge transport (resistivity, magnetoresistance, Hall effect) induced by electron scattering from disordered grain boundaries rough surfaces on metallic nanostructures; we review measurements of magneto that elucidate mechanisms at work. as well theoretical developments quantum theories allow calculating increase in resistivity electron-rough surface (in absence boundaries) first...
We report measurements of the resistivity $\ensuremath{\rho}(T)$ a gold film 70 nm thick deposited on mica preheated to 300 \ifmmode^\circ\else\textdegree\fi{}C in UHV, performed between 4 and K, surface topography same with scanning tunneling microscope (STM). From roughness measured STM we determine parameters \ensuremath{\delta} (rms amplitude) \ensuremath{\xi} (lateral correlation length) corresponding Gaussian representation average height-height autocorrelation function (ACF). use...
The resistivity of metallic structures depends on both electron-grain boundary scattering and electron-surface scattering. By tuning the grain size, we have been able to separate contribution originating in scattering, from that arising gold films approximately 54 nm thick deposited onto mica substrates under high vacuum. Surprisingly, measured between 4 300 K can be described by Drude's model; it as well Mayadas's theory using reflectivity $R$ only adjustable parameter.
ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTExcess electron mobility in hydrocarbon liquids at high pressureRaul C. Munoz, Richard A. Holroyd, Kengo. Itoh, Kazumichi. Nakagawa, Masaru. Nishikawa, and Kenji. FuekiCite this: J. Phys. Chem. 1987, 91, 17, 4639–4643Publication Date (Print):August 1, 1987Publication History Published online1 May 2002Published inissue 1 August 1987https://pubs.acs.org/doi/10.1021/j100301a042https://doi.org/10.1021/j100301a042research-articleACS PublicationsRequest...
We report the Hall effect measured in gold films evaporated onto mica substrates, samples having an average grain diameter D that ranges between 12 and 174 nm, a thickness t of approximately 50 nm 100 nm. The mobility was determined at low temperatures T (4 K ≤ K). By tuning size during sample preparation, we discriminate whether dominant collision mechanism controlling resistivity 4 is electron-surface or electron-grain boundary scattering, based upon depends linearly on film D.
The Hall mobility (μH) of excess electrons was measured in liquid 2,2-dimethylbutane (22DMB), 2,2,4-trimethylpentane (224TMP), and 2,2,4,4-tetramethylpentane (2244TMP) at temperatures from 20 to 160 °C. Drift mobilities μD were also over this temperature range. At °C the observed values μH for 22DMB, 224TMP, 2244TMP are 12, 22, 32 cm2/V s, respectively. In all three liquids increases with temperature. comparison indicates that electron traps absent 22DMB 2244TMP. contrast, 224TMP is about...
We report the Hall constant RH, drift mobility μD, and μH measured at 4 K in thin gold films deposited on mica substrates, where dominant electron scattering mechanism is electron-surface scattering. RH increases with increasing film thickness decreases magnetic field. For high fields B≥6 T, turns out to be approximately independent of field, its value close that free model. use field values determine thickness. This nondestructive method leads a determination agrees within 10% by other...
Measurements of the Hall and time-of-flight mobilities electrons injected into neopentane along liquid-vapor coexistence curve between triple critical points are reported. The ratio mobility to always exceeds unity; it decreases linearly from 1.8 at low temperatures 1.4 near 410 K increases thereafter nearly 5.8 in vicinity point. This is suggestive localized states associated with density fluctuations. These fluctuations probably dominant scattering mechanism that determines mobility.
We report measurements of the Hall effect performed on 4 gold films evaporated onto mica substrates where signal arises primarily from electron-surface scattering. The were at low temperatures T (4 K < or = 50 K) under high magnetic field strengths B (1.5 9 T), with oriented perpendicular to films.
We report the measurement of longitudinal magnetoresistance, performed on 4 thin gold films different thickness evaporated onto preheated mica, where signal can be univocally attributed to electron-surface scattering. The magnetoresistance exhibits a marked dependence: at K and 9 Tesla it is about 2.6% for thinner (72 nm) film, 13.5% thicker (266 film. observed variance with predictions theory Way Kao [Phys. Rev. B 5, 2039 (1972)].
We report measurements of the temperature dependent resistivity (T) a gold film 70 nm thick deposited on mica preheated to 300 °C in UHV, performed between 4 K and K, surface topography same with scanning tunnelling microscope (STM). From roughness measured STM we determine parameters (r.m.s. amplitude) (lateral correlation length) corresponding Gaussian an exponential representation average autocorrelation function (ACF). use determined via calculate quantum reflectivity R , dependence both...
We have extended the modified formalism of Sheng, Xing, and Wang [J. Phys.: Condens. Matter 11 L299 (1999)] to allow calculation conductivity a thin metallic film bounded by rough fractal surface. utilized so-called k-correlation model proposed Palasantzas Barnas [Phys. Rev. B 48, 14 472 (1993); 56, 7726 (1997)], describe height-height autocorrelation function corresponding self-affine roughness. This extension permits as r.m.s. roughness amplitude \ensuremath{\delta}, lateral correlation...