A5103573316- Silicon Carbide Semiconductor Technologies
- Physics of Superconductivity and Magnetism
- Coal and Coke Industries Research
- Advancements in Semiconductor Devices and Circuit Design
- Advanced ceramic materials synthesis
- Thermochemical Biomass Conversion Processes
- Photonic and Optical Devices
- Thermal properties of materials
- Laser and Thermal Forming Techniques
- Particle accelerators and beam dynamics
- Iron and Steelmaking Processes
- Hydrogen Storage and Materials
- Biopolymer Synthesis and Applications
- Chemical Synthesis and Analysis
- Laser Material Processing Techniques
- Electrostatic Discharge in Electronics
- Magneto-Optical Properties and Applications
- Aluminum Alloys Composites Properties
- Aerodynamics and Fluid Dynamics Research
- Fluid dynamics and aerodynamics studies
- Genetic and phenotypic traits in livestock
- Neural Networks and Reservoir Computing
- Advanced Electrical Measurement Techniques
- Computational Fluid Dynamics and Aerodynamics
- Nanofabrication and Lithography Techniques
National Institute of Advanced Industrial Science and Technology
2003-2025
Advanced Power Electronics (United States)
2025
Toyohashi University of Technology
2011
Takara (Japan)
2010
Hitachi (Japan)
2005
Saitama University
2003
Nippon Steel Chemical and Material (Japan)
1993-1996
Chiba Institute of Technology
1995
Tohoku University
1991
Purdue University West Lafayette
1977-1985
In this study, we present the development of a compact and lightweight nanosecond pulsed power supply designed to improve performance plasma actuators for flow control on unmanned aerial vehicles (UAVs). While traditional AC supplies are commonly used in actuators, offer advantage operating over wider range Reynolds numbers, making them highly desirable. However, miniaturization weight reduction pose significant challenges. To address these issues, novel approach using high-voltage silicon...
We present a new type of electro- and magneto-optical spatial light modulators (e-MOSLMs) utilizing the concept photonic crystals (PCs) – such e-MOSLMs have microcavity structure. They comprise (MO) electro-optical (EO) constituents that can control direction polarization plane, when applying voltage and/or external magnetic fields. Optical spectra were analyzed by using matrix approach. Calculations showed change over considerably large range angles at relatively low power consumption with...
A potential distribution analysis of source/drain (SD) regions in sub-30-nm-gate-length metal-oxide-semiconductor field-effect transistors (MOSFETs) is presented as an example the present status electron holography analysis. First, authors describe experimental setups that determine resolutions practice. They show specimen preparation artifacts significantly affect energy resolution and can be reduced by preparing specimens using low-energy back side ion milling. Second, they SD MOSFETs.
A high temperature resistant joint technology for bonding SiC power devices is developed using a transient liquid phase sintering (TLPS) process with paste containing Cu and Sn powders the size less than 15μm. The are bonded to Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> /Cu/Ni(P) substrate TLPS at 260°C in xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> atmosphere 20...
Transient thermal analysis is a very useful tool for evaluation to realize the stable operation of SiC power modules which are operated at higher temperatures than conventional Si modules. A transient system investigate characteristics high temperature presented. We have found that precise measurement initial stage junction decay curve necessary in order evaluate resistance and heat capacity die attach, since diffusivity larger distribution was considered. Using proposed method, AuGe attach...
The incorporation of an active single-quantum well in the tuning layer a DBR laser is proposed as way compensating for optical loss and achieving stable single-mode operation during wavelength tuning. Experimental results demonstrate that structure achieves these goals while maintaining efficiency In application to short-cavity with gain region 35-µm long, continuous gtuning over broad 4.8nm achieved lasing properties (more than 40dB side-mode suppression). Fast switching less 10ns cross...
This paper reports a method for determining the gate bias voltage condition during transient temperature measurement using SiC–MOSFET body diode. The Vg–Vsd characteristic of device was investigated. There exists plateau where Vsd does not change with changes in Vg. In this plateau, diode is possible under condition. applied to three devices different characteristics. results confirmed that by selecting appropriate Vg values according relevant each module which (Device A, Device B1, and B2)...
Abstract This study investigates the surge current capabilities of embedded Schottky barrier diodes (SBDs) in SiC SBD-integrated trench metal–oxide–semiconductor field effect transistors (MOSFETs) (SWITCH-MOSs) using titanium and nickel for metals. The results demonstrated that a 25% enhanced capability can be achieved an SBD with higher height compared to those it was comparable body-PiN-diodes standard MOSFET (IE-UMOSFETs). Furthermore, superior IE-UMOSFETs have wide thick Cu heat...
Permeability of a packed bed coal and coke, which is very impor-tant property for the analysis pyrolyzed gas flow behavior within or porous media, measured in room temperature after carbonization process. Below softening (Tsf), coals heated up vessel made to be able set directly measurement section. On other hand, semicoke produced by heating an arbitrary over Tsf, cut off length 2cm, its side coated with thermosetting resin then coke fixed test every increased gradually below Tsf decreased...
A superconducting tunnel junction (STJ) is very attractive for use in high-energy-resolution photon detectors because of its small energy gap. To detect a single photon, the Josephson current STJ has had to be suppressed by an external magnetic field. We demonstrated on-chip coil-integrated detector, which excludes field, allowing device size. normal-distribution function shape was adopted electrodes, makes field supplied small. devise new detector combining above techniques. switching gate...
Abstract In this paper, we demonstrate that the structural degradation of a silicon carbide (SiC) power module corresponding to thermal cycles can be detected and tracked non-destructively by transient analysis method. The purpose evaluation is analyze distribution resistance in identify structure deterioration part. with SiC-MOSFET were assembled using ZnAl eutectic solder as device under test. individual each part such SiC-die, die-attachment, AMCs, baseplate was successfully evaluated...
乳牛の繁殖と牛乳の尿素濃度(尿素態窒素,Milk urea-nitrogen; MUN)との関係を解明するため,民間の3牧場において14ヵ月間にわたり毎月1回ずつ個体ごとの牛乳試料を採取した(148頭から延べ1,091点).この間に人工授精された129頭につきMUNと受胎の関係を追跡した.別途,12カ所の牧場においてバルク乳を毎月1回ずっ1年間にわたり採取し,そのMUNと当該サンプル時(月)の受胎率(月間の授精が4頭以上の場合)の関係を調べた.その結果,(1) 個体別のMUNは4～23mg/dlの範囲にあった.MUNが18mg/dl以上の牛では受胎例がなかったが,それ以下においては受胎成績との関係を認めず,乳蛋白質率と受胎成績にも関係がなかった.(2) バルク乳(144例)のMUNは8～16mg/dlの範囲にあり,このうち1ヵ月に4頭以上に授精を行なったのは62例あったが,バルク乳のMUNと受胎率には関係を認めなかった.以上,MUNが18mg/dl以上の乳牛では受胎例がなかったが,バルク乳のMUNが8～16mg/dlの範囲では牛群の受胎率には影響ないものと思われた.
コークス炉内熱および物質移動現象の解明を目的として, 軟化溶融層・セミコークス層の粘性, 軟化溶融層の膨張および物性値の熱分解反応率依存性を考慮したコークス塊内熱応力モデルを開発した.また小型乾留炉を用いた実験を行いコークス層変形挙動を観察・測定した.その結果物性値を熱分解反応率依存で与えた場合は, 温度依存で与えた場合と比較して昇温速度が大きい場合でも変位挙動を良好に再現したため, 熱物性値の熱分解反応率依存性を考慮する必要性が示された.またクリープ解析結果は弾性解析結果と比較して実験値と良好に一致し, 乾留過程における塊変形挙動解析を行うためには軟化溶融層・セミコークス層の粘性を考慮する必要があることが示された.さらに加熱壁の拘束を与えた場合の最大主応力の推算結果は, 実験の傾向と定性的に一致し, 本解析モデルおよび壁面拘束方法の妥当性が示された.
This paper describes fabrication of highly functional ceramic fiber/aluminum composites by the Interphase Forming/Bonding (IF/B) Method in air. In previous studies, fragile fibers such as optical fiber and piezoelectric have been successfully embedded an aluminum matrix without losing their functions IF/B method using a low-vacuum hot-pressing equipment. order to simplify procedure reduce costs, are fabricated compact equipment which enables rapid heating oxidation this study, effects...
In order to improve the heat efficiency and productivity in conventional coke oven, cokemaking process combining carbonization a coking chamber direct heating was investigated. The concept is that pushed out with lower temperature rather than method post-heated directly by combusting residual volatile matter complete carbonization. Coke properties strength were investigated decrease final temperature, effect of on improvement qualities conditions studied test oven based mathematical...
In this research, we propose a new monitoring method of the temperature molten pool for stable layered fabrication in metal wire supply type laser 3D printer. The to be supplied is melted by during molding and flows into base metal, so that an electric closed circuit formed. At time, since exceeds 1400 ° C., when components are different, Seebeck effect produces output voltage between wire. From voltage, ground can obtained. Furthermore, applying method, it also possible monitor component...
コークス粒度は.冶金用コークスの役割の中で最も重要な炉内ガスの通気性の維持に直接関係する品質であり。その値はコークス炉内に形成されるコークス塊寸法に大きく左右される.コークス塊には微小な亀裂が縦横に生じており。この微小亀裂もコークス粒度に関係すると考えられる.本研究では, コークス塊寸法を仮定し, 適当な亀裂進展条件を設定することにより.亀裂内輻射を考慮したコークス塊内熱応力解析を行い, 塊内微小亀裂生成機構の解明を試みた.その結果、コークス塊内に生じる引張り応力は, 縦方向については炉壁近傍程大きく, 乾留終了時でも10～20MPa程度生じており, コークス塊に生じる炉壁からの複数の縦亀裂 (炉壁に垂直な亀裂) の発生を説明することができた.しかし, 横方向の引張り応力は塊内部に生じ, 亀裂辺には横方向に大きな圧縮応力が生じており, 亀裂辺からの横亀裂 (炉壁に平行な亀裂) の発生を説明することはできなかった.
A superconducting Josephson sampling measurement system with excellent time resolution on the picosecond scale is a highly useful tool for analysing ultrahigh-speed electrical signals in cryogenic environment. The circuit was designed and fabricated high-Jc Nb/AlOx/Nb junction integrated technology. domain reflectometry (TDR) using step signal generator has been developed. TDR of microstrip lines successfully carried out 6 ps rise signal. characterization achieved.