Abstract The SrTiO 3 thin films were fabricated by pulsed laser deposition. Subsequently ion implantation with 60 keV N ions at two different fluences 1 × 10 16 and 5 ions/cm 2 followed annealing was carried out. Thin then characterized for electronic structure, morphology transport properties. X-ray absorption spectroscopy reveals the local distortion of TiO 6 octahedra introduction oxygen vacancies due to implantation. electrical thermoelectric properties these measured as a function...

Understanding the resistive switching (RS) behavior of oxide-based memory devices at nanoscale is crucial for advancement high-integration density in-memory computing platforms. This study explores a comprehensive growth parameter space to address RS pulsed-laser-deposited substoichiometric TiO2 (TiOx) thin films in search tailored memristors with low-power consumption and high stability. Conductive-atomic-force-microscopy-based measurements facilitate deciphering nanoscale, providing direct...

The emergence of new physical properties at the interfaces between complex oxides has always been both fundamental and practical importance. Here, we report observation a giant topological Hall resistivity $\sim 2.8 \mu \Omega$ \text{cm} room temperature in an epitaxial thin-film heterostructure permalloy (Py, Ni$_{80}$Fe$_{20}$) half-metallic ferromagnet La$_{0.65}$Sr$_{0.35}$MnO$_3$ (LSMO). This large magnitude effect Py/LSMO heterostructure, compared to single-layer Py thin film, is...

Materials exhibiting topological transport properties, such as a large Hall resistivity, are crucial for next-generation spintronic devices. Here, we report resistivities in epitaxial supermalloy (NiFeMo) thin films with [100] and [111] orientations grown on single-crystal MgO (100) Al2O3 (0001) substrates, respectively. While X-ray reciprocal maps confirmed the growth of films, stress analyses revealed residual strains inducing tetragonal distortions cubic NiFeMo unit cells. Magnetic force...

Resistive random-access memory (ReRAM) devices have emerged to be a promising source for ample information storage in next-generation nonvolatile memories (NVMs) and true random number generation (TRNG)-based robust cybersecurity. However, cycle-to-cycle performance degradation at the nanoscale results deviation of normal probability distribution, limiting ReRAM applicability micron-size devices. This work demonstrates efficacy low-energy Au-ion implantation nanometer-thick HfOx films...

Defect density and its migration under the influence of an applied electric field plays a crucial role for memristors toward designing fundamental element neuromorphic computing, e.g., artificial synapse. Therefore, to have tunable performance, even at nanoscale, it is essential better control over defect density, albeit achieving with direct growth methods remains challenge. Here, we demonstrate effective robust approach tune consequently resistive switching behavior in TiOx layers using...

Abstract Neuromorphic computing is a potential approach for imitating massive parallel processing capabilities of bio‐synapse. To date, memristors have emerged as the most appropriate device designing artificial synapses this purpose due to their excellent analog switching capacities with high endurance and retention. However, build an operational neuromorphic platform capable high‐density information, memristive nanoscale footprint are important, albeit size scaled down, retaining...

With the rapid progress of artificial intelligence, integration biological capabilities into electronic devices has become crucial. In this context, memristive synaptic have emerged as key components in bio-inspired electronics for advancing computational applications. However, there are limited reports on achieving multifunctional switching behavior, combining analog resistive (ARS) and digital (DRS) behaviors a single-perovskite oxide-based device. work, we demonstrate ARS fundamental...

SrTiO3 is a wide bandgap cubic perovskite oxide and displays many exotic properties, i.e., transparent conductivity, photocatalysis, metallicity, ferroelectricity, superconductivity, colossal magnetoresistance, two-dimensional electron gas, etc., due to the manipulations of defect chemistry constituent elements via impurity doping. This paper reports on intricacy structural optoelectronic properties epitaxially stabilized 5 at. % Ta-doped (001) thin films LaAlO3 substrates by systematically...

Electrocaloric effects of adiabatic temperature change via the application external electric fields are explored for energy-efficient solid-state refrigeration. These typically estimated from thermodynamic analyses polarization and field in electrocaloric materials, which implies that higher gives larger changes. However, this may not be always true. Here, using both indirect direct methods, we report an anomalous effect where thermal changes occur by applications lower a multi-domain BaTiO3...

The synthesis of new graphene-type materials ( via polymerization porphyrin macrocycles) through a simple chemical synthetic pathway (at RT) has been demonstrated. This newly synthesized material can be dispersed in water with an average sheet size few microns and single layer thickness. As the contains four inner ring nitrogen atoms thus presented polymeric will close analogous N-doped graphene. Porphyrin as key component to synthesize layered graphene type continuous 2D structure never...

We report the evolution of structural distortions on pulsed laser deposited SrTiO3 (STO) thin films irradiated by 1 MeV Ar ion beam and their response in electrical thermoelectric properties correlated with electronic structures. The studies reveal a modification crystalline nature resulting synergistic enhancement resistivity Seebeck coefficient due to irradiation-induced oxygen vacancies augment power factor ∼17 μW m−1K−2, which is 2.5 times higher than pristine STO. An in-depth analysis...

The Ar ion irradiation induced effects in thermoelectric properties of TiO2/STO bilayer have been investigated by X-ray Diffraction, alongwith Absorption spectroscopy. was deposited on silicon substrate Pulsed laser deposition at a temperature 700°C and then irradiated using 1 MeV beam fluence 1×1016 ions/cm2. Seebeck coefficient resistivity measurements were performed the bridge method two probe measurements. It found that drastically reduces after enhances significantly compared to bulk SrTiO3.

<p>The synthesis of new graphene-type materials (<i>via</i> polymerization porphyrin macrocycles) through a simple chemical synthetic pathway (at RT) has been demonstrated. This newly synthesized material can be dispersed in water with an average sheet size few microns and single layer thickness. As the contains four inner ring nitrogen atoms thus presented polymeric will close analogous N-doped graphene. Porphyrin as key component to synthesize layered graphene type...