A parallel arrangement of a silicon (Si) IGBT and carbide (SiC) MOSFET is experimentally demonstrated. The concept referred to as the cross-switch (XS) hybrid aims reach optimum power device performance by providing low static dynamic losses while improving overall electrical thermal properties due combination both bipolar Si unipolar SiC characteristics. For purpose demonstrating XS hybrid, configuration implemented in single package for devices rated at 1200 V. Test results are obtained...

The cross hybrid (XS) concept has been demonstrated experimentally with 3.3-kV Si Insulated Gate Bipolar Transistor (IGBTs) and SiC MOSFETs in parallel, used to calibrate 2D Technology Computer Aided Design simulations. XS offers lower switching losses compared full IGBTs reduced oscillations MOSFETs. current sharing mechanism between the IGBT MOSFET elucidated, showing that under typical conditions, dissipate 98% of turn-OFF MOSFET. Since density is twice solution, it exhibits higher...

An approach to implement electrically robust MOSFETs in a functioning half-bridge will be investigated. For the first time, reverse conducting 3.3kV SiC have been fabricated with dilferent cell pitches from 14μm (p1.0) 26μm (pl.8) that are able withstand short circuit pulse of up 10μs and 9ms surge current event 15x nominal current. LinPak modules showing reduction switching loss by more than 90% compared silicon IGBT/diode half bridge.

In this study, the conceptual design of an unmanned ground effect vehicle (UGEV), based on in-house analytical tools and CFD calculations, followed by flow control studies, is presented. Ground vehicles can operate, in a more efficient way, over calm closed seas, taking advantage aerodynamic interaction between vehicle. The proposed UGEV features useful payload capacity 300 kg maximum range km cruising at 100 kt. Regarding layout, platform which combines basic geometry characteristics...

In this work, the development of a conceptual design methodology an innovative aircraft configuration, known as box wing, is presented. A wing based on continuous-surface nonplanar formation with no wing-tips. The A320 medium range conventional cantilever used both reference and main competitor aircraft. Based characteristics dimensions, complete aerodynamic analysis configuration made by means layout computational fluid dynamics studies, highlighting operating advantages compared to aspect...

Electrically robust 6.5kV SiC MOSFETs are investigated for the static and dynamic performance, short circuit capability safe operation area (SOA). rated at were fabricated with different cell pitches from 12μm to 26μm that able withstand pulses of up 8μs have a turn-off SOA 4400V twice nominal current Inom. The paralleling four was tested represent realistic setup while showing substantial reduction in switching loss by more than 80% compared silicon IGBT Diode.

In this work we present the simulation and experimental results of "Cross Switch (XS)-Hybrid" built with 3.3kV Si-IGBTs SiC-MOSFETs. We have analyzed switching performance, mainly turn-off behavior XS-Hybrid (a parallel arrangement a Si-IGBT SiC-MOSFET) aid Sentaurus TCAD device simulations. discuss in detail current sharing mechanism between these two devices hence distribution losses stress (peak power density, dynamic avalanche) on during switching. addition, investigated by variation...

The static and dynamic performance of Silicon Carbide (SiC) MOSFET rated for 1200V applications has been investigated. MOSFETs with a planar design several different cell pitches have fabricated. Special attention dedicated to the channel design, where novel retrograde doping profile employed. For reference, more common box also used. Turn-off measurements under high current over voltage conditions reveal that body diode offers wide safe operating area capability. feature exceptional...

In this paper we present the latest results of utilizing MOS-control (MOSctrl) to optimize performance Bi-mode Insulated Gate Transistor (BIGT) chip. The adaption BIGT technology enables higher output power per footprint. However, enable full benefit BIGT, optimisation known standard MOS gate control is necessary. This being demonstrated over whole current and temperature range for diode turn-off turn-on operation. It shown that optimum can offer a increase up 20% high voltage devices.

In this work, a 3D numerical study on the influence of spanwise distribution tubercles unmanned aerial vehicle wing is presented. The idea using in aeronautics comes from humpback whale (Megaptera novaeangliae) which has characteristic flipper, with scalloped leading edge, creating an almost sinusoidal shape, consisting bumps called tubercles. uses layout order to achieve high underwater maneuverability. Early experimental research showed great potential enhancing aerodynamic characteristics...

Abstract In this work, a methodology for the conceptual design of combined Box-wing and Blended-Wing-Body unmanned aerial platform, which exploits ground effect, is presented. Ground Effect Vehicles (GEVs) are aircrafts or vehicles capable flying very close to surface water areas, being promising alternative ships seaplanes operating in closed seas. order exploit air cushion that formed underneath, GEVs have low Aspect Ratio wings. Thus, (BWB) layout configuration an appealing choice due...

Abstract In this work, a study on the impact of passive flow control techniques an Unmanned Aerial Vehicle (UAV) Blended Wing Body (BWB) is presented. The novel BWB layout integrates smoothly wing to fuselage, creating aerodynamically superior platform. However, lack vertical stabilizers in form tail, creates need for stable and efficient wings that can withstand spanwise flow. To end, two are implemented study, namely fences tubercles. vanes or airfoils attached vertically lifting surface...

Despite the previously reported benefits of High Voltage Reverse Conducting RC-IGBT concepts such as BIGT, main obstacle for adopting them in mainstream applications is dependency diode conduction losses on applied gate voltage polarity. In most applications, adaptations are required at both control and drive levels providing lower losses. The paper investigates this particular issue with respect to device design. With aid simulation experimental results, an advanced low loss which can...

This paper presents an experimental investigation of the dynamic performance SiC 6.5kV JBS diodes. Using a hybrid Si SPT IGBT/SiC diodes combination, we have analyzed turn-off behavior limits and compared result against state-of-the-art PiN diode. The results show that can handle about 40A/chip at 125°C before going into thermal runaway. maximum current value increases by 50% when are operated room temperature. dI/dt behaviour appear to be virtually independent DC-link voltage (at R <inf...

A shallow phosphorus buffer peak has been added to state-of-the-art planar soft punch through IGBT (1200 V and 1700 V, 150 A, 13.6 × mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) lower the leakage current expand temperature operation range up 200°C. The new design is experimentally demonstrated provide rugged switching (RBSOA) 200°C without compromising other high performance characteristics like short circuit capability.

Different state-of-the-art buffer concepts compatible with ≥ 200 mm diameter, thin wafer technology ( ) have been optimized in enhanced planar insulated gate bipolar transistor (IGBT) for 1200 V and 1700 V, 150 A rated, 13.6 x <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> devices evaluated the goal of reducing leakage currents to enable a stable operation up Tj=200 xmlns:xlink="http://www.w3.org/1999/xlink">°</sup> C. With maximum...

In this paper, we present for the first time, experimental results of a "Bimode Cross Switch (BXS)-Hybrid" built with 3.3kV Silicon Enhanced Trench Bi-mode IGBTs (Si-ET-BIGT) and Carbide MOSFETs (SiC-MOSFET). Also, have compared static (on-state) dynamic (switching) characteristics BXS-Hybrid (1 × Si-ET-BIGT + 2 SiC-MOSFET) full SiC-MOSFET (4 (2 Si-ET-BIGT) reference samples. addition, investigated MOS gate control (blanking time tbl) influence in diode-mode during reverse recovery to those...

In this paper, the design and implementation of a low complexity Direct Sequence Ultra-Wideband (DS-UWB) receiver subsystem which incorporates Channel Estimator (CE) novel hybrid Partial/Selective (HPS) RAKE Receiver (RR) using maximal ratio combining (MRC) is presented. The proposed architecture demonstrates tradeoff between energy capture, performance by benefits both partial selective algorithms. We focus our work on highly parallel, modular, synthesizable based FPGA technology it...

In this work, a 3D numerical study on the influence of spanwise distribution tubercles for UAV applications is presented. The idea using in aeronautics comes from humpback whale (Megaptera novaeangliae) which has characteristic flipper, with scalloped leading edge, creating an almost sinusoidal shape, consisting bumps called tubercles. Early experimental research showed great potential enhancing aerodynamic characteristics wing. Most existing results concern infinite wings (2D) models and...

Abstract In this work, the conceptual design methodology of a hybrid Unmanned Aerial Vehicle (UAV) – Underwater (UUV) platform is presented. As mission complexity and need for interoperability between different platforms grows more demanding by day, are becoming an essential solution. Hybrid UAV-UUVs can operate seamlessly repeatedly in both aerial underwater environments, something that numerous animal species already execute optimized way. The starts with review few available prototypes,...

This paper presents an investigation into the performance of SiC JBS diodes rated for 6.5kV applications. For active area layout, two hexagonal cell designs with different A Schottky /A Total ratios have been considered. completeness, is compared to that PiN diodes, fabricated on same wafer. benchmark against state art in Si technology also provided.