A5101916518- Plasma Diagnostics and Applications
- Semiconductor materials and devices
- Laser-induced spectroscopy and plasma
- Nuclear Physics and Applications
- Ion-surface interactions and analysis
- Laser-Plasma Interactions and Diagnostics
- Particle Accelerators and Free-Electron Lasers
- Copper Interconnects and Reliability
- Radiation Detection and Scintillator Technologies
- Semiconductor materials and interfaces
- Advanced Memory and Neural Computing
- Particle accelerators and beam dynamics
- Advancements in Semiconductor Devices and Circuit Design
- Electronic and Structural Properties of Oxides
- Fusion materials and technologies
- Photonic and Optical Devices
- Magnetic confinement fusion research
- Pulsed Power Technology Applications
- Silicon and Solar Cell Technologies
- Atomic and Molecular Physics
- Gyrotron and Vacuum Electronics Research
- Radiation Effects in Electronics
- Particle Detector Development and Performance
- Semiconductor Quantum Structures and Devices
- Supercapacitor Materials and Fabrication
N. I. Lobachevsky State University of Nizhny Novgorod
2024
Institute of Applied Physics
2024
Institute of Physics and Technology
2021-2023
Moscow Institute of Physics and Technology
2020-2023
Institute of Physics and Technology
2020-2023
Institute of Spectroscopy
2023
Ioffe Institute
2023
Kurchatov Institute
2004-2020
Lomonosov Moscow State University
2019
National Research Tomsk State University
2017
Ruthenium thin films were deposited by plasma-enhanced atomic layer deposition (PEALD) technology using Ru(EtCp)2 and oxygen plasma on the modified surface of silicon SiO2/Si substrates. The crystal structure, chemical composition, morphology characterized grazing incidence XRD (GXRD), secondary ion mass spectrometry (SIMS), force microscopy (AFM) techniques, respectively. It was found that mechanism film growth depends crucially substrate temperature. GXRD SIMS analysis show at temperature...
Graphene nanostructures (GNS) are among the most promising materials for creating supercapacitors. However, GNS still not used in supercapacitors due to impossibility of obtaining large volumes high-quality material at an acceptable cost. In this work, we investigated efficiency using few-layer graphene (FLG) with number layers is more than 5 synthesized under Self-propagating high-temperature synthesis (SHS) conditions as basic Using SHS process makes it possible synthesize FLG without...
Usually, the measurement of half-wave voltage in crystals is carried out by applying a direct electric field to them. In this study, methodology for measuring crystal under sinusoidal proposed, based on decomposition recorded signal using Bessel functions Two-pass optical scheme KDP irradiated 532 nm green laser was explored. The proposed method convenient and allows use generators with lower output voltages.
Abstract Nucleation effects were experimentally studied for ruthenium thin films grown by plasma-enhanced atomic layer deposition (PEALD) using O 2 plasma. Bis(ethylcyclopentadienyl)ruthenium (II) (Ru(EtCp) ) was used as Ru precursor. The with the thickness 10 nm on different underlying layers (interfaces), including Si, SiO2, Ta 5 , TiN, and TaN deposited to investigate of interfaces nucleation in ALD process. Some samples previously processed ammonia oxygen plasma enhance nucleation....
The results of research on the creation and development microwave radiation sources in long-wave part terahertz range (100-400 GHz) using double-drift impact avalanche transit-time diodes (IMPATT diodes) are presented. Minimum contour losses maximum output power low impedance IMPATT achieved oscillatory system open radial transmission feeder. Equivalent circuits generators considered, electrophysical parameters structures given. Schemes designs their main
The goal of any enterprise, first all, is to get maximum profit. To the desired result, companies need constantly improve their work or services. It possible remain competitive in market with introduction innovations activities. Innovation activity aimed at developing new products that will be attractive consumers and thereby bring profit enterprise. Our economy motion, so it necessary keep up times. This reason for relevance this article, which presents current state prospects development...
The depth distribution of carbon impurities in hafnium oxide films obtained by plasma-assisted atomic layer deposition is studied experimentally and theoretically. An analytical model proposed that describes the dependence impurity concentration profile film. takes into account fact formation a growing film may be caused incomplete oxidation organometallic precursor. diffusion redistribution determined mech-anisms take presence different kinds states: an insoluble state (carbides,...
The experimental investigations of neck development dynamics in the Z-pinch with 0.1 g/cm/sup 3/ density were carried out on an 8-module pulsed power generator, S-300 (4 MA, 100 ns). objective these experiments was a study for possibility obtaining plasmas extra-high parameters region, corresponding to fusion ignition conditions.