A5032895767- Endodontics and Root Canal Treatments
- Thin-Film Transistor Technologies
- Dental Radiography and Imaging
- Semiconductor materials and devices
- ZnO doping and properties
- Dental materials and restorations
- Advanced Optical Imaging Technologies
- Transition Metal Oxide Nanomaterials
- Dental Trauma and Treatments
- Gyrotron and Vacuum Electronics Research
- Photorefractive and Nonlinear Optics
- Virtual Reality Applications and Impacts
- TiO2 Photocatalysis and Solar Cells
- dental development and anomalies
- Interactive and Immersive Displays
- Microwave Engineering and Waveguides
- Terahertz technology and applications
- Mesenchymal stem cell research
- Electrical and Thermal Properties of Materials
- Silicon Nanostructures and Photoluminescence
- Dental Anxiety and Anesthesia Techniques
- Pediatric health and respiratory diseases
- Advanced machining processes and optimization
- Dental Implant Techniques and Outcomes
- Fungal Biology and Applications
Yonsei University
2015-2024
Yonsei University College of Dentistry
2017-2024
Incheon Medical Center
2023
Samsung (South Korea)
2012-2022
Wonju Severance Christian Hospital
2020
Division of Undergraduate Education
2018
Choonhae College of Health Sciences
2018
Ankara Yıldırım Beyazıt University
2016
Gangnam Severance Hospital
2015-2016
Amsterdam UMC Location University of Amsterdam
2016
The effect of Ar plasma treatment on amorphous indium gallium zinc oxide (a-IGZO) thin films was investigated. net electron carrier concentration (1020–1021cm−3) the a-IGZO dramatically increased upon their exposure to compared that (1014cm−3) as-deposited film. authors attempted reduce contact resistance between Pt∕Ti (source/drain electrode) and (channel) by using treatment. Without treatment, film transistors (TFTs) with W∕L=50∕4μm exhibited a moderate field-effect mobility (μFE)...
We developed amorphous hafnium-indium-zinc oxide (HIZO) thin films as semiconductors and investigated the electrically physically. Adding of hafnium (Hf) element can suppress growing columnar structure drastically decrease carrier concentration hall mobility in HIZO films. The film transistors (TFTs) with active channel exhibit good electrical properties field effect around 10 cm2/Vs, S 0.23 V/decade, high Ion/off ratio over 108, enough to operate next electronic devices. In particular,...
A novel device structure is presented for amorphous oxide semiconductor thin-film transistors with high performance as well improved electrical/optical stress stability. The highly stable transistor devices are developed using composition-modulated dual active layers. This approach could potentially be used to fabricate product-level display semiconductors in the near future. Detailed facts of importance specialist readers published "Supporting Information". Such documents peer-reviewed, but...
Abstract An artificial muscle actuator resolves practical engineering problems in compact wearable devices, which are limited to conventional actuators such as electromagnetic actuators. Abstracting the fundamental advantages of an provides a small-scale, high-power actuating system with sensing capability for developing varifocal augmented reality glasses and naturally fit haptic gloves. Here, we design shape memory alloy-based lightweight actuator, so-called compliant amplified alloy...
Amorphous-gallium-indium-zinc-oxide (a-GIZO) thin filmtransistors (TFTs) are fabricated without annealing, using processes and equipment for conventional a-Si:H TFTs. It has been very difficult to obtain sound TFT characteristics, because the a-GIZO active layer becomes conductive after dry etching Mo source/drain electrode depositing a-SiO2 passivation layer. To prevent such damages, N2O plasma is applied back surface of channel before deposition. plasma-treated TFTs exhibit excellent...
We have demonstrated a self-aligned top-gate amorphous gallium indium zinc oxide thin film transistor (a-GIZO TFT). It had field effect mobility of 5 cm2/V s, threshold voltage 0.2 V, and subthreshold swing V/decade. Ar plasma was treated on the source/drain region a-GIZO active layer to reduce series resistance. After treatment, surface divided into In-rich In-deficient regions. The TFT also constant sheet resistance 1 kΩ/◻ for thickness over 40 nm. interface between Mo metal plasma-treated...
In order to model dc characteristics of n-channel amorphous InGaZnO thin-film transistors from experimentally obtained density states (DOS), the acceptorlike DOS is extracted optical response capacitance-voltage and confirmed by technology computer-aided design (TCAD) simulation comparing with measured data. Extracted a linear superposition two exponential functions (tail deep states), its incorporation into TCAD reproduces well experimental current-voltage over wide range gate drain...
In this letter, we investigated the effects of source/drain series resistance on amorphous gallium-indium-doped zinc-oxide (a-GIZO) thin film transistors (TFTs). A linear least square fit a plot reciprocal channel versus gate voltage yields threshold 3.5 V and field-effect mobility about 13.5 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vldrs. Furthermore, in a-GIZO TFTs, most current flows distance range 0-0.5 mum from edge...
A fully transparent nonvolatile memory with the conventional sandwich gate insulator structure was demonstrated. Wide band gap amorphous GaInZnO (a-GIZO) thin films were employed as both charge trap layer and transistor channel layer. An excellent program window of 3.5 V a stressing time 100 ms achieved through well-known Fowler–Nordheim tunneling method. Due to similar energy levels extracted from experimental data, asymmetrical program/erase characteristics are believed be result strong...
Amorphous gallium-indium-zinc-oxide (GIZO) thin film transistors with short channels of 50 nm were successfully fabricated by e-beam lithographic patterning. The GIZO showed a high mobility 8.2 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vldrs on-to-off current ratios up to 10 xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> . Excellent channel characteristics also obtained small shift the threshold voltages and no degradation...
This study evaluated the root-filling quality of a calcium silicate-based sealer and gutta percha (GP) cones by measuring percentage voids. Twenty artificial molar teeth were divided into two groups: one obturated using single-cone (SC) technique, other continuous wave (CW) technique. Obturation was performed with GP Endoseal MTA (mineral trioxide aggregate, Maruchi, Wonju, Korea). Obturated scanned microcomputed tomography, void volume calculated in apical coronal areas. A linear mixed...
The aim of this study was to assess the effect three calcium silicate-based sealers (EndoSeal MTA, Nano-ceramic Sealer, and Wellroot ST) two epoxy resin-based (AH-Plus, AD Seal) on various aspects, such as cell viability, inflammatory response, osteogenic potential, human periodontal ligament stem cells (hPDLSCs). AH-Plus showed lowest viability hPDLSCs in all time periods fresh media. In set media, no significant differences among tested materials. ST highest level adhesion morphology...
The aim of this study was to evaluate the biocompatibility calcium silicate-based sealers (CeraSeal and EndoSeal TCS) epoxy resin-based sealer (AH-Plus) in terms cell viability, inflammatory response, expression mesenchymal phenotype, osteogenic potential, attachment, morphology, human periodontal ligament stem cells (hPDLSCs). hPDLSCs were acquired from premolars (n = 4) four subjects, whose ages extended 16 24 years age. Flow cytometry analysis showed stemness maintained all materials. In...
We fabricated gallium-indium-zinc oxide (GIZO) thin film transistors (TFTs) having a double-gated (DG) structure and studied the back gate effect on device performance. DG GIZO TFTs showed better threshold voltage (Vth), swing factor (S), on/off current than those with single gate. With variation in bias, performance significantly changes due to modification of field distribution near channel. It is believed that our an effective way improve suppress formation accumulation layer at surface.
Currently, both high-density 3-D stacking nonvolatile (NV) memory and embedded NV in advanced systems on panel (SOPs) urgently demand the assistance of new functional transition metal-oxide materials. This is to overcome serious fabrication issues encountered use conventional Si or poly-crystalline materials, as well increase storage density with lower process cost. paper reports fully structure operated by an ionic amorphous oxide semiconductor a wide energy band gap (> 3.0 eV) Ga <sub...
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> The source/drain region of amorphous GaInZnO thin-film transistor with self-aligned top-gate structure was defined by simple <formula formulatype="inline"><tex Notation="TeX">$\hbox{NH}_{3}$</tex></formula> plasma treatment instead complicated processes, such as ion implantation and activation. When the active layer exposed to gas plasma, series resistance decreased considerably. It exhibited...
Enterotoxigenic Bacteroides fragilis (ETBF) produces an approximately 20-kDa heat-labile enterotoxin (BFT) that plays essential role in mucosal inflammation. Although spontaneous disappearance of ETBF infection is common, little information available on regulated expression antibacterial factors response to BFT stimulation. This study investigates the human beta-defensin 2 (hBD-2) induction from intestinal epithelial cells. Stimulation HT-29 and Caco-2 cell lines with resulted hBD-2....
A technique for extracting the acceptorlike density of states (DOS) <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n</i> -channel amorphous GaInZnO (a-GIZO) thin-film transistors based on combination subbandgap optical charge pumping and xmlns:xlink="http://www.w3.org/1999/xlink">C</i> - xmlns:xlink="http://www.w3.org/1999/xlink">V</i> characteristics is proposed. While energy level scanned by photon gate voltage sweep, its extracted from...