We report on the simple fabrication of monolayer graphene (MLG)/germanium (Ge) heterojunction for infrared (IR) light sensing. It is found that as-fabricated Schottky junction detector exhibits obvious photovoltaic characteristics, and sensitive to IR with high Ilight/Idark ratio 2 × 10(4) at zero bias voltage. The responsivity detectivity are as 51.8 mA W(-1) 1.38 10(10) cm Hz(1/2) W(-1), respectively. Further photoresponse study reveals displays excellent spectral selectivity peak...

Near infrared light photodiodes have been attracting increasing research interest due to their wide application in various fields. In this study, the fabrication of a new n ‐type GaAs nanocone (GaAsNCs) array/monolayer graphene (MLG) Schottky junction is reported for NIR detection. The photodetector (NIRPD) shows obvious rectifying behavior with turn‐on voltage 0.6 V. Further device analysis reveals that photovoltaic NIRPDs are highly sensitive 850 nm illumination, fast response speed and...

Heterojunctions near infrared (NIR) photodetectors have attracted increasing research interests for their wide-ranging applications in many areas such as military surveillance, target detection and light vision. A high-performance NIR photodetector was fabricated by coating the methyl-group terminated Si nanowire array with plasmonic gold nanoparticles (AuNPs) decorated graphene film. Theoretical simulation based on finite element method (FEM) reveals that AuNPs@graphene/CH3-SiNWs device is...

A derivative-phase CsPb₂Br₅ is introduced into inorganic perovskite solar cells, which will effectively eliminate interface defects, lower the energy barrier of electron transport layer and suppress recombination at hole in devices.

Schottky junction solar cells were constructed by combining the monolayer graphene (MLG) films and Si nanowire (SiNW) arrays. Pronounced photovoltaic characteristics investigated for devices with both p-MLG/n-SiNWs n-MLG/p-SiNWs structures. Due to balance between light absorption surface carrier recombination, made of SiNW arrays a medium length showed better performance could be further improved enhancing MLG conductivity via appropriate treatment or doping. Eventually, photoconversion...

Self-powered photodetectors based on CdS:Ga nanoribbons (NR)/Au Schottky barrier diodes (SBDs) were fabricated. The as-fabricated SBDs exhibit an excellent rectification characteristic with a ratio up to 106 within ±1 V in the dark and distinctive photovoltaic (PV) behavior under light illumination. Photoconductive analysis reveals that highly sensitive illumination very good stability, reproducibility fast response speeds at zero bias voltage. corresponding rise/fall times of 95/290 μs...

Abstract Photodetection in the solar‐blind deep‐ultraviolet (DUV) regime (200–280 nm) has received significant attention for its many critical applications military and civil areas. In this study, a vapor–solid synthesis technique catalyst‐free growth of single‐crystalline β‐Ga 2 O 3 nanowires is developed. A photodetector made highly sensitive to 265 nm DUV illumination with excellent photoresponse performance. The performance parameters including I light / dark ratio, responsivity,...

Sb-doped ZnTe nanoribbons (NRs) with enhanced p-type conductivity were successfully synthesized by a simple thermal co-evaporation method. Nanodevices, including nano-field-effect transistors (FETs) and nano-photodetectors (nanoPDs), constructed based on the ZnTe:Sb NRs their structure dependent device performances systemically investigated. It is found that transport properties of nanostructures as well structures play critical role in determining performances. In contrast to...

Single-crystal p-type ZnSe nanowires (NWs) with zinc blende structure and [21–1] growth direction were synthesized by using bismuth (Bi) as dopant via a thermal co-evaporation method. The : Bi NWs showed evident conductivity hole concentration up to 4.1 × 1018 cm−3 after the acceptor activation. Negative photoconductivity was first investigated in p-ZnSe NWs, i.e., of under light dramatically lower than that dark. Surface effects arising from oxygen absorption photo-desorption suggested be...

Controlling the electrical transport properties of II–VI nanostructures is vital to their practical applications. Here, we report synthesis n-type ZnS nanowires (NWs) by using aluminium (Al) as a dopant via simple thermal co-evaporation method. The conductivities ZnS:Al NWs were greatly enhanced upon Al doping and could be further tuned in wide range 3 orders magnitude adjusting level. Field-effect transistors (FETs) fabricated from individual revealed an electron concentration up 1.3 × 1018...

Light detection in the near-infrared (NIR) region is of particular importance due to its wide application for both military and civil purposes.

Abstract Controlled growth of high‐quality patterned perovskite films on a large scale is essentially required for the application this class materials in functional integrated devices and systems. Herein, graphene‐assisted hydrophilic–hydrophobic surface‐induced Cs‐doped FAPbI 3 with well‐patterned shapes by one‐step spin‐coating process developed. Such facile fabrication technique compatible range spin‐coated materials, manufacturing processes, substrates. By employing growing method,...

Photonic detection with narrow spectrum selectivity is very important to eliminate the signal from obtrusive light, which can improve anti-interference ability of infrared imaging system. While self-driving effect inherent p-n junction attractive in optic-electronic integration, application narrow-band photodetectors limited by usual broad absorption range. In this work, a self-powered filterless narrowband near-infrared photodetector based on CuGaTe2/silicon was reported. The as-fabricated...

Abstract The neuromorphic computing architecture is a promising artificial intelligence for implementing hierarchical processing, in‐memory computing, event‐driven operation and functional specialization in systems. However, current investigations mainly focus on unisensory processing without objective experience which contrary to the flexible sensory learning capability human brain that can sense process information according ever‐changing environment. For example, dominant paradigm...

We report a synthesis of single-crystal [001] oriented selenium nanobelts (SeNBs) through simple vacuum evaporation at 250 °C. The width and thickness the SeNBs are in range 100–800 nm 20–90 nm, respectively. I–V analysis an individual SeNB based field effect transistor (FET) reveals typical p-type electrical conduction. hole mobility concentration respectively estimated to 0.63 cm2 (V s)−1 9.35 × 1016 cm−3. characteristics can be explained by surface termination model, according which, H-...

We report the construction of Schottky solar cells based on graphene nanoribbon/multiple silicon nanowires (SiNWs) junctions. Only a few (∼10) SiNWs were involved to miniaturize cell for nanoscale power source applications. It was found that doping level played an important role in determining device performance. By increasing level, with open circuit voltage 0.59 V and energy conversion efficiency 1.47% achieved under AM 1.5G illumination. The large effective junction area radial responsible high

Efficient n-type doping of ZnS nanoribbons (NRs) were accomplished by using chlorine (Cl) as the dopant viathermal evaporation. An indium tin oxide (ITO) transparent electrode was used to achieve ohmic contact ZnS:Cl NRs. The conductivity Cl-doped NRs significantly improved compared with undoped ones and could be tuned a wide range 3–4 orders magnitude adjusting Cl level. High-performance nano-photodetectors constructed based on NRs, which show high sensitivity UV light while are nearly...

Abstract Combining both 1D geometry and the features of hybrid perovskite materials, micro/nanowires have recently attracted particular attention for a variety optoelectronic device applications. Herein, by taking advantage strong built‐in potential induced asymmetric contact with varied work functions, highly sensitive visible photodetectors based on CH 3 NH PbI microwire array that display pronounced photovoltaic activities are reported. These afford capability to without an external power...

Abstract 3D imaging using single‐photon time‐of‐flight (ToF) detection has emerged as a potential solution for sensing in challenging scenarios. However, most schemes require strict synchronization between the illuminating light transmitter and detector, which greatly limits their practicality flexibility. Here, synchronization‐free scheme that exploits only binary‐encoded illumination photon time‐stamping high‐speed system are proposed. The correlation arrival times of photons detected by...

Single-crystalline intrinsic and N-doped p-type ZnTe nanoribbons (NRs) were synthesized via the thermal evaporation method in argon-mixed hydrogen nitrogen-mixed ammonia, respectively. Both doped had zinc blende structure uniform geometry. X-ray diffraction peaks of an obvious shift toward higher angle direction as compared with ZnTe. photoelectron spectroscopy detection confirmed that dopant content nitrogen was close to 1%. Field-effect transistors based on both constructed. Electrical...

In this work, a simple strategy is proposed to improve the device performance of photodetector by modifying plasmonic nanoparticles onto surface semiconductors nanostructure. Both experimental analysis and theoretical simulation show that metal (AuNPs) exhibits obvious localized plasmon resonance (LSPR) which can trap incident light efficiently, leading enhanced photocurrents improved photoelectronic devices. It also observed AuNPs modified CdTeNW exhibit apparent sensitivity 510 nm light,...

We report on the synthesis of layered γ-In₂Se₃ nanofilm for broadband photodetector and near infrared light image sensing applications.

Photodetection at a wavelength of about 1060 nm is very important for applications including medical imaging, optical communication, and light detection ranging. In this article, self-powered near-infrared detector with narrowband around realized based on simple Si Schottky structure, in which the Ohmic electrodes are configured front rear surfaces substrate, respectively. The as-assembled device exhibits tunable peak response near full width half maximum 107 nm, could be due to combined...

A multilayered PtSe₂/pyramid-Si heterostructure-based photodetector array consisting of 8×8 device units shows excellent optoelectrical performance with potential applications in NIR image sensing and real-time light trajectory tracking.