A5113914290- Semiconductor Quantum Structures and Devices
- solar cell performance optimization
- Nanowire Synthesis and Applications
- GaN-based semiconductor devices and materials
- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Semiconductor materials and devices
- Semiconductor materials and interfaces
Bulgarian Academy of Sciences
2020-2025
Centre for Advanced Study
2013-2019
This paper investigates the possibility of using a nanolaminate TiO2/Ag/TiO2 structure as transparent conductive coating on GaAs solar cells. A novel result is that this forms an Ohmic contact to Al-rich AlGaAs, which used “window” layer in GaAs-based The deposited by RF magnetron sputtering at room temperature. has good optical and electrical properties: high transmittance 94% 550 nm, sheet resistance 7 Ω/sq, figure merit (FOM) 105 × 10−3 Ω−1. These properties are presence discontinuous Ag...
Abstract This paper presents the comparison of nitrogen incorporation in GaAsN and InGaAsN layers grown on GaAs substrate from Ga‐ In‐rich solution, respectively, by liquid‐phase epitaxy. Polycrystalline GaN has been used as a source two cases. The initial epitaxy temperature varied range 600‐550 °C. Nitrogen content Ga 1‐ x AsN determined to be 0.1‐0.5%. Higher efficiency found for quaternary under carefully chosen lattice matched conditions. into study vibrational mode absorption...
In this paper, we demonstrate the potential of contactless surface photovoltage (SPV) method for fast and reliable control GaAs-based solar cells directly on epitaxial heterostructures before metallization photolithography processes. The magnitude SPV corresponds to generated in photoactive region, which is related open circuit voltage cell. focus investigation dilute nitride compounds grown by low-temperature liquid-phase epitaxy (LPE) application as intermediate multijunction cells. First,...
Multi-junction solar cells, according to the detailed balance limit, should be able achieve efficiencies above 50 percent. Work on new materials is necessary for improvements beyond current state of art. In this work, we evaluate use GaAsSbN, which has shown promise multi-junction particularly targeting 1eV cell. Epitaxial growth material in work been achieved via liquid phase epitaxy, as it can produce high quality crystalline layers. We present our initial and characterization results a...
The properties of GaAsSbN and GaAsSb layers grown by liquid-phase epitaxy on n-GaAs substrates were investigated in a comparative plan with view their possible application multi-junction solar cells. To avoid non-uniformity effects the composition these compounds two or three different group-V volatile elements, crystallization was carried out from finite melt thickness 0.5 mm at low (<560 °C) temperatures. X-ray microanalysis diffraction used to determine composition, lattice mismatch,...