A5080729450- Ferroelectric and Piezoelectric Materials
- Multiferroics and related materials
- Acoustic Wave Resonator Technologies
- Electronic and Structural Properties of Oxides
- Magnetic and transport properties of perovskites and related materials
- Microwave Dielectric Ceramics Synthesis
- Advanced Condensed Matter Physics
- Advanced Sensor and Energy Harvesting Materials
- Conducting polymers and applications
- ZnO doping and properties
- 2D Materials and Applications
- Topological Materials and Phenomena
- Thin-Film Transistor Technologies
- Tactile and Sensory Interactions
- Copper-based nanomaterials and applications
- Ultrasound Imaging and Elastography
- Microencapsulation and Drying Processes
- Silicon Carbide Semiconductor Technologies
- Gut microbiota and health
- Silicon Nanostructures and Photoluminescence
- Ga2O3 and related materials
- Chemical Synthesis and Analysis
- Magneto-Optical Properties and Applications
- Quantum many-body systems
- Surface Chemistry and Catalysis
Lanzhou University
2023-2024
Shanghai Normal University
2012-2022
Shanghai Institute of Pharmaceutical Industry
2019
University of Chinese Academy of Sciences
2017
Shanghai Institute of Technical Physics
2017
East China Normal University
2017
A ternary solid solution (0.935‐ x ) B i 0.5 N a T O 3 –0.065 – S r was designed and fabricated using conventional fabrication process. Temperature composition dependence of the ferroelectric, dielectric, piezoelectric properties were systematically investigated schematic phase diagram established. The substitution found to induce transition from ferroelectric relaxor pseudocubic phases. Around critical 0.22, large strain response ~0.2% (under moderate field 4 kV/mm) with normalized 490 pm/V...
In this work, an electric field-induced giant strain response and excellent photoluminescence-enhancement effect was obtained in a rare-earth ion modified lead-free piezoelectric system. Pr3+-modified 0.93(Bi0.5Na0.5)TiO3-0.07BaTiO3 ceramics were designed fabricated by conventional fabrication process. The ferroelectric, dielectric, piezoelectric, photoluminescence performances systematically studied, schematic phase diagram constructed. It found the Pr3+ substitution induced transition from...
Bifidobacteria are considered one of the most important intestinal probiotics because their significant health impact. However, this ability is usually limited by gastrointestinal fluid and temperature sensitivity. Emulsification internal gelation an encapsulation technique with great potential for probiotic protection during storage transit process. This study prepared microcapsules using emulsification method sodium alginate, chitosan, Bifidobacterium longum as wall material, coating...
We report a high frequency ultrasonic transducer up to 50 MHz for vessel imaging based on lead-free (K0.44Na0.56)NbO3–0.5 mol. % Mn (Mn-KNN) single crystal, which has electromechanical coupling coefficient kt of 0.64 and large thickness constant Nt 3210 kHz · mm. The Krimholtz, Leedom, Mattaei (KLM) equivalent circuit model was utilized simulate optimize the pulse-echo response combined with PiezoCAD software. Theoretically, -6 dB bandwidth 74.94% obtained at center 50.47 optimized matching...
With the rapid development of triboelectric nanogenerators (TENGs) for flexible wearable devices and electronic skins, challenges have gradually emerged related to electrification surface, such as pollutant contamination sophisticated surface adaptability. Hence, we report a simple spraying method produce shape-adaptive photocatalytic (SAP) material with both self-cleaning functions. By polyvinyl alcohol solution TiO2 photocatalysts pre-drying cyclic, SAP film can be adapted varied intricate...
The characteristics of MoS2-nanoflake field-effect transistors (FETs) were studied by analyzing the transfer curves in MoS2-FETs with ferroelectric and general polymers as gate dielectric. A clear hysteresis, opposite to electron trapping–detrapping effect traditional MoS2-FETs, was observed poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] films. carrier mobility MoS2 nanoflakes reached approximately 95.6 cm2/Vs under control polarization field P(VDF-TrFE), whereas only 15.3...
Circuits can provide a versatile platform for exploring new physics, particularly in probing the topological phases within complex geometries. Fractals, celebrated their intricate, self-similar duality, and noninteger dimensions, those embedded manifolds, remain uncharted this context. In our research, we implement Sierpi\ifmmode \acute{n}\else \'{n}\fi{}ski fractal insulators reconfigurable circuits while expanding scope to include cylindrical toroidal structures. Our approach is grounded...
The size controlled Al nanoparticles (NPs) were prepared by magnetron sputtering and subsequent rapid thermal annealing. Significant deep ultraviolet (DUV) detection enhancement is demonstrated on 4H-SiC metal-semiconductor-metal (MSM) photodiodes (PDs) introducing the coupling of localized surface plasmon resonance (LSPR) from NPs. peak responsivity 165 mA/W quantum efficiency 93% at 220-nm wavelength are achieved under deuterium lamp illumination when 10-V bias applied, which 3.93 times...
The Ni contact layer was deposited on semi-insulating 4H-SiC substrate by magnetron sputtering. as-deposited samples were treated rapid thermal annealing (RTA) and KrF excimer laser (LTA), respectively. RTA annealed sample is rectifying while the LTA Ohmic. specific resistance (ρc) 1.97 × 10−3 Ω·cm2, which determined circular transmission line model. High resolution electron microscopy morphologies selected area diffraction patterns demonstrate that 3C-SiC transition zone formed in...
Abstract High‐quality ternary relaxor ferroelectric (100)‐oriented Mn‐doped 0.36Pb(In 1/2 Nb )O 3 ‐0.36Pb(Mg 1/3 2/3 ‐0.28PbTiO (Mn‐PIMNT) thin films were grown on SrRuO ‐buffered SrTiO single‐crystal substrate in a wide deposition temperature range of 550‐620°C using the pulsed laser method. The phase structure, ferroelectric, dielectric, piezoelectric properties, and nanoscale domain evolution studied. Under 620°C, hysteresis loops current‐voltage curves showed that film owned...
Abstract HgTe film is widely used for quantum Hall well studies and devices, as it has unique properties, like band gap inversion, carrier‐type switch, topological evolution depending on the thickness modulation near so‐called critical (63.5 Å), while its counterpart bulk materials do not hold these nontrivial properties at ambient pressure. Here, much richer transport emerging in crystal through pressure‐tuning are reported. Not only above‐mentioned abnormal can be realized a 400 nm thick...
Abstract Mn‐doped 0.36Pb(In 1/2 Nb )O 3 –0.36Pb(Mg 1/3 2/3 –0.28PbTiO [Mn‐PIMNT(36/36/28)] thin films were fabricated by pulsed laser deposition. The microstructures and ferroelectric, piezoelectric, dielectric, pyroelectric properties investigated. exhibited a (111) orientation as well uniform dense surface. Raman spectra revealed that the showed rhombohedral phase at room temperature, to tetragonal, tetragonal paraelectric transitions near 150℃ 250℃, respectively. Furthermore, high remnant...