A5100866546- Crystallization and Solubility Studies
- X-ray Diffraction in Crystallography
- Semiconductor materials and devices
- Electronic and Structural Properties of Oxides
- Ferroelectric and Piezoelectric Materials
- Silicon Nanostructures and Photoluminescence
- Metamaterials and Metasurfaces Applications
- Epigenetics and DNA Methylation
- Graphene research and applications
- Digital Marketing and Social Media
- Social Media and Politics
- Silicon Carbide Semiconductor Technologies
- Conducting polymers and applications
- Nanowire Synthesis and Applications
- RNA modifications and cancer
- Plasmonic and Surface Plasmon Research
- ZnO doping and properties
- Complex Network Analysis Techniques
- Photonic and Optical Devices
- High-Temperature Coating Behaviors
- Advanced Thermoelectric Materials and Devices
- Organic Electronics and Photovoltaics
- Muon and positron interactions and applications
- RNA Research and Splicing
Fudan University
2024
Zhongshan Hospital
2024
State Key Laboratory of Medical Neurobiology
2024
Sichuan University
2023
University of Electronic Science and Technology of China
2004-2021
Shenzhen University
2020
Metasurface has attracted massive interest owing to its ability control light arbitrarily in a wide range of applications, such as high-speed imaging, optical interconnection, and spectroscopy. Here we propose free space modulator combined with gold grating metasurface based on lithium niobate (LiNbO3). The quasi-bound states the continuum (quasi-BIC) are achieved metasurface. In addition, plasmonic quasi-BIC guided-mode resonance (GMR) can be modulated by controlling polarization incident...
Homoepitaxial SrTiO3 thin films were grown by laser molecular beam epitaxy. The growth mode was determined in-situ reflective high energy electron diffraction, and the surface of studied ex-situ atomic force microscopy. At deposition rate 0.16Å∕sec density 6J∕cm2, layer-by-layer observed above 460°C substrate temperature, while Stranski-Krastanov mode, that is plus island prevailed between 410°C. On further decreasing under With optimization process in terms rate, lowest crystallization...
Silicon carbide (SiC) is a IV-IV compound semiconductor material with wide band gap. Semiconductor electronic devices and circuits made from SiC are presently being developed for high-temperature, high-power, high-radiation conditions in which conventional semiconductors can not adequately perform. In this study, 3C-SiC micro-pillar arrays were fabricated on Si substrate by chemical vapor deposition (CVD). Silane acetylene used as the source gas. The of circular features ion beam etching....
Abstract Astrocytes in the brain exhibit regional heterogeneity contributing to circuits involved higher-order functions, yet mechanisms controlling their distribution remain unclear. Here, we show that precise allocation of astrocytes specific regions during development is achieved through transcription factor 4 (Tcf4)-mediated fate restriction based on embryonic origin. Loss Tcf4 ventral telencephalic neural progenitor cells alters oligodendrocyte precursor transient intermediate astrocyte...
Well-ordered self-assembled SrTiO3 thin film, as a template for complex oxide quantum wires, was fabricated on LaAlO3 (100) single crystal substrates with laser molecular beam epitaxy. The growth in-situ monitored by reflective high energy electron diffraction. morphology evolutions of the films function thickness were studied ex-situ atomic force microscopy. As increased from 3.875nm to 46.5nm gradually, compressive stress-induced exhibited periodic well-ordered ripple structure, which...