A5045616192- Organic Electronics and Photovoltaics
- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Quantum Computing Algorithms and Architecture
- Quantum-Dot Cellular Automata
- Surface and Thin Film Phenomena
- Quantum and electron transport phenomena
- Copper Interconnects and Reliability
- Chalcogenide Semiconductor Thin Films
- nanoparticles nucleation surface interactions
- Advanced Thermodynamics and Statistical Mechanics
- Nanowire Synthesis and Applications
- Catalytic Processes in Materials Science
- Semiconductor materials and interfaces
- 2D Materials and Applications
- Molecular Junctions and Nanostructures
- Metal and Thin Film Mechanics
- Electronic and Structural Properties of Oxides
- Advancements in Semiconductor Devices and Circuit Design
- MXene and MAX Phase Materials
Intel (United States)
2024
Cornell University
2011-2021
We have examined the effect of growth rate on evolution two polymorphs thin films tetracene SiO2 using synchrotron X-ray radiation and molecular beam techniques. Ex situ reflectivity shows that forms phases SiO2: a thin-film phase bulk phase. used in situ, real-time grazing incidence diffraction during to reveal nature concerning these phases. observe there is initially only phase, up thickness several monolayers. This followed by nucleation both phases, finally find deposited when nucleates...
We have examined the growth of thin films tetracene on SiO2 using in situ real time X-ray synchrotron radiation and ex atomic force microscopy. Using reflectivity, we observe a transition from 3D island to 2D layer-by-layer as deposition rate is increased. This unusual phenomenon has not been observed previous work with pentacene, despite similarities between these two molecules. Atomic microscopy suggests that may tend quickly traverse "upwards" thin-film features such edges islands, making...
We have examined the growth of bilayers and superlattices pentacene perylene derivatives (PTCDI-Cn) using in situ real time X-ray synchrotron radiation techniques ex atomic force microscopy. find that PTCDI-Cn layers on 1 monolayer (ML) is initially 2D layer-by-layer (LbL), eventually transitioning to a mode more 3D after several monolayers been deposited. extent LbL depends length alkyl end chains, Cn: smoothest films are formed with PTCDI-C5, while roughest PTCDI-C13. These observations...
We have examined the effect of growth rate on mode thin films tetracene SiO2 at a substrate temperature 0 °C. For preponderance conditions here, only thin-film phase is formed. From combination in situ real-time synchrotron X-ray scattering and ex atomic force microscopy, we observed transition from 3D to 2D layer-by-layer (LbL) as increased, similar previous results obtained 30 this lower temperature, however, find that occurs much rate. attribute significantly diminishing upward step-edge...
The authors have examined ultrathin (≤10 Å) tantalum nitride (TaNx) thin films deposited by atomic layer deposition (ALD) on three surfaces relevant to interconnect layers in microelectronic devices: thermally grown SiO2; a Cu film physical vapor deposition, and carbon-doped SiO2 porous low-κ film. employed ex situ angle-resolved x-ray photoelectron spectroscopy (ARXPS), low-energy ion scattering (LEISS), force microscopy (AFM) determine the continuity of these films, implication, abruptness...
The authors report the design and characterization of a microreactor probe that enables gas-phase reactions such as atomic layer deposition (ALD) at low-to-medium vacuum, which is coupled directly to an ultrahigh vacuum (UHV) analysis chamber for subsequent in situ surface without air break. Avoiding this break critical developing complete understanding growth ultrathin films, particularly early stages growth. Making use precisely defined gap between substrate surface, reactants are well...
Intels efforts to build a practical quantum computer are focused on developing scalable spin-qubit platform leveraging industrial high-volume semiconductor manufacturing expertise and 300 mm fabrication infrastructure. Here, we provide an overview of the design, fabrication, demonstration new customized test chip, which contains 12-quantum-dot linear arrays, code named Tunnel Falls. These devices fabricated using immersion extreme ultraviolet lithography (EUV), along with other standard...
Intel's efforts to build a practical quantum computer are focused on developing scalable spin-qubit platform leveraging industrial high-volume semiconductor manufacturing expertise and 300 mm fabrication infrastructure. Here, we provide an overview of the design, fabrication, demonstration new customized test chip, which contains 12-quantum-dot linear arrays, code named Tunnel Falls. These devices fabricated using immersion extreme ultraviolet lithography (EUV), along with other standard...
We have examined the nucleation and growth of WSe2 thin films in ultrahigh vacuum on highly oriented pyrolytic graphite (HOPG) using situ real-time x-ray fluorescence (XRF), ex diffraction, photoelectron spectroscopy, scanning electron microscopy, atomic force microscopy. employed W(CO)6 as W source delivered via a supersonic molecular beam, Sen an effusion cell, we substrate temperatures from 400 to 540 °C. Crystalline, near stoichiometric were formed at Ts ≤ 470 °C, whereas those °C very...
Abstract not Available.