Ankur Garg

ORCID: 0000-0002-9588-8051
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About
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Research Areas
  • Semiconductor Quantum Structures and Devices
  • Quantum and electron transport phenomena
  • Graphene research and applications
  • Advancements in Semiconductor Devices and Circuit Design
  • Microgrid Control and Optimization
  • 2D Materials and Applications
  • Microwave Engineering and Waveguides
  • Gas Sensing Nanomaterials and Sensors
  • Semiconductor materials and interfaces
  • Acoustic Wave Resonator Technologies
  • Noise Effects and Management
  • Multilevel Inverters and Converters
  • Advanced Chemical Sensor Technologies
  • Building Energy and Comfort Optimization
  • GaN-based semiconductor devices and materials
  • Advanced DC-DC Converters
  • Nuclear reactor physics and engineering
  • Thermal properties of materials
  • Analytical Chemistry and Sensors
  • Sustainable Building Design and Assessment
  • Advanced MEMS and NEMS Technologies
  • Sensor Technology and Measurement Systems
  • Advanced Sensor and Energy Harvesting Materials
  • Photovoltaic System Optimization Techniques
  • Inertial Sensor and Navigation

Indian Institute of Technology Roorkee
2024

Chandigarh University
2019-2021

Punjab Engineering College
2016-2019

Iowa State University
2015

Samsung (India)
2015

Indian Institute of Technology Delhi
2012

Massachusetts Institute of Technology
2003

Negative differential resistance (NDR) is observed in various emerging electronic devices. As compared to the conventional silicon-based field effect transistor (FET), NDR widely investigated two-dimensional (2D) transition metal dichalcogenide (TMD) FETs. In this work, we study for TMD-based metal-edge-contact MoS2 double-gate FET with 10 nm channel length. The multiscale atomistic simulation demonstrated lateral heterostructure of a metal–semiconductor–metal by density functional theory,...

10.1063/5.0190143 article EN Journal of Applied Physics 2024-02-09

This paper addresses the dynamic analysis of a class paralleled symmetric systems having nonlinear subsystem coupling and external feedback. A transformation is introduced that allows stability full system to be assessed through examination only two low-order subsystems. The also considers use new results for power converter with active current sharing. It shown can simplified by this approach even when challenging nonlinearities appear in current-sharing control loops.

10.1109/iscas.1999.777543 article EN 2003-01-20

10.1007/s41870-018-0228-7 article EN International Journal of Information Technology 2018-07-28

Sensor fusion algorithms convert multiple motion sensor data such as accelerometer, gyroscope and magnetometer to generate device orientation information in terms of quaternion. Application developers also require estimation capabilities on low cost devices which may have fewer types compared high end devices. This paper introduces an adaptive approach where application could configure the number sensors sampling rate control algorithm achieve rotation quaternion required accuracy power...

10.1109/icsens.2015.7370394 article EN IEEE Sensors 2015-11-01

In this study, rectification behavior and noise spectra of a graphene based four-terminal ballistic rectifier are reported utilizing semi-classical drift-diffusion 3D modeling.

10.1039/c8na00423d article EN cc-by-nc Nanoscale Advances 2019-01-01

In this paper, 2D computer simulations based on Silvaco TCAD (Atlas) have been employed to showcase the effect of different dielectric materials I-V characteristics a novel nanoelectronic diode fabricated out 2DEG such as GaN and InGaAs. Being potential terahertz detector, it is further demonstrated that how these affect parasitic conductive properties devices at very high frequencies.

10.1109/microcom.2016.7522531 article EN 2016-01-01

This paper presents implementation of a two stage three phase PV-grid interfaced system with VSC which has been utilized as multifunctional device. Adaptive noise reduction technique is used to control transfers the active power from PV grid and also works an filter (APF) improve quality at AC mains. The algorithm presented here fast accurate dynamic response. proposed SPV energy implemented linear non-linear load show harmonic elimination, balancing factor correction.

10.1109/pesgm.2015.7286619 article EN 2015-07-01

This paper gives the optimization approach for radio frequency microelectromechanical (RF MEMS) resistive series switch. The RF MEMS switches are used to reconfigure circuits. There will be need obtain best value of switch parameters, which play an important role in electromagnetic circuitry. Further, this provides a novel parametric variation method by varying physical dimensions optimize performance. proposed exhibit pull-in response 18 V. insertion loss performance is range -0.1496 dB...

10.1109/aicera-icmicr.2013.6576005 article EN Annual International Conference on Emerging Research Areas and International Conference on Microelectronics, Communications and Renewable Energy 2013-06-01

A novel three terminal nano-rectifier which utilizes dissipated thermal energy to produce electrical signals is designed and analyzed. The device simulated using different models including standard mobility model, negative differential model balance model. (DC RF) performances of the rectifier have been obtained at room temperature in push-fixed configuration input terminals. Due planar architecture, exhibits less parasitic capacitance enabling very high speed operation. results demonstrate...

10.1109/piers.2017.8262397 article EN 2017 Progress In Electromagnetics Research Symposium - Spring (PIERS) 2017-05-01

In this paper, we present a physics-based core compact model for two-dimensional (2D) molybdenum disulfide (MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> ) channel material-based FET. The FET characteristics have been studies using ab-initio simulations as well experimental data. is derived from closed-form solutions of Poisson's equation considering 2D density states and Fermi-Dirac statistics along with drift-diffusion transport...

10.1109/edtm58488.2024.10511512 article EN 2024-03-03

Urban-scale building energy modeling (UBEM) holds promise for optimizing usage across extensive geographic regions. However, there is a recognized bias between simulated consumption and actual measured data. This study, based on data from Chicago, delved into correction techniques enhancing the accuracy of UBEM estimates. Initially, AutoBEM simulation yielded normalized mean error (NMBE) 1.1% 51% Coefficient Variation Root Mean Square Error (CVRMSE) after outlier exclusion. To address this,...

10.1109/idsta58916.2023.10317837 article EN 2023-10-24

In the modern technological era there is a need of virtual instrumentation in testing and experimentation electrical machines drives colleges, universities other academic institution to increase accuracy, efficiency analytical part experiment. This paper proposes technique for online performance analysis 3 phase induction motor which replaces conventional method doing experiments use old measuring equipment like ammeter, voltmeter, tachometer, power analyzer. A new called impedance also...

10.1109/pedes.2012.6484485 article EN 2012-12-01

In this paper we simulate two-cross junction based novel rectifier called ballistic by employing drift-diffusion model using Silvaco Atlas Software. The electrical (DC and RF) characteristics of the device have been characterized at room temperature demonstrating operation frequency 1 THz. results analyzed considering different dimensions surface charge densities InGaAs heterostructure various temperatures. It has observed that rectification deteriorates with increase in due to reduction...

10.1109/rteict.2016.7808187 article EN 2016-05-01

In this paper, multiplexer based logic gates design is presented using ballistic deflection transistor. The three-parameter gaussian peak analytical model integrated into behavioral modeling in the Verilog-AMS module to achieve characteristics of Also, device modeled and simulated on Cadence AMS simulator further single transistor used inverter/buffer circuit. two gates, which are 2:1 structure. results confirm correct working all gates.

10.1109/icces48766.2020.9138022 article EN 2022 7th International Conference on Communication and Electronics Systems (ICCES) 2020-06-01
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