O. Ozturk

ORCID: 0000-0002-9592-3152
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About
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Research Areas
  • Semiconductor Quantum Structures and Devices
  • Laser-Matter Interactions and Applications
  • Quantum and electron transport phenomena
  • Quantum optics and atomic interactions
  • Quantum Dots Synthesis And Properties
  • Spectroscopy and Laser Applications
  • Semiconductor Lasers and Optical Devices
  • Advanced Semiconductor Detectors and Materials
  • Spectroscopy and Quantum Chemical Studies
  • Quantum Information and Cryptography
  • Advanced Fiber Laser Technologies
  • Nanowire Synthesis and Applications
  • Advanced Photocatalysis Techniques
  • MXene and MAX Phase Materials
  • 2D Materials and Applications
  • Laser-induced spectroscopy and plasma

Sivas Cumhuriyet Üniversitesi
2017-2024

Atatürk University
2024

Abstract Supercapacitor (SC) devices holds an important position between traditional capacitors and ion batteries in terms of energy density power values. In particular, SC′s greater values than Li‐ion make them useful for some specific applications, such as storing hybrid cars while the car slows down. Increasing is one key challenges SC community. Transition metal dichalcogenides (TMDCs), are new developing material systems to have this potential, compared their counterparts’ transition...

10.1002/celc.202300575 article EN cc-by ChemElectroChem 2024-02-06

Abstract The nonlinear optical rectification, the second harmonic generation coefficient, and third coefficient in parabolic-inverse parabolic-parabolic quantum wells (PIPPQWs) inverse parabolic-parabolic-inverse parabolic (IPPIPQWs) are calculated varying intense laser field (ILF) parameter ( <?CDATA ${\alpha _0}$?> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mrow> <mml:msub> <mml:mi>α</mml:mi> <mml:mn>0</mml:mn> </mml:msub> </mml:mrow> </mml:math> )....

10.1088/1555-6611/ac5516 article EN Laser Physics 2022-02-25

The nonlinear optical rectification (NOR), the second harmonic generation (SHG) and third (THG) coefficients in asymmetric parabolic-step quantum wells (APSQW) inverse (AIPSQW) are considered as depending on intense laser field (ILF). found consequences indicate that ILF parameter approves a dynamic influence shape, width height of confined potential profile both APSQW AIPSQW, alterations dipole moment matrix elements energy levels (ELs) followed potential. AIPSQW compared to were affected...

10.1088/1402-4896/ab2ef1 article EN Physica Scripta 2019-07-03

For square-step quantum wells (SSQWs) and graded-step (GSQWs), the nonlinear optical rectification (NOR), second harmonic generation (SHG) third (THG) coefficients under an intense laser field (ILF) are analyzed. The found results indicate that ILF can ensure a vital influence on shape height of confined potential profile both SSQWs GSQWs, alterations dipole moment matrix elements energy levels adhered potential. According to results, GSQWs affected more significantly by intensity compared...

10.1088/0256-307x/36/6/067801 article EN Chinese Physics Letters 2019-05-01

For asymmetric multiple step quantum wells (AMS QWs) and inverse V-shaped (AIVSMS QWs), the nonlinear optical features, such as rectification (NOR), second harmonic generation (SHG) third (THG) coefficients are analyzed according on intense laser field (ILF). The found consequences indicate that ILF parameter confirms a vital influence shape height of confined potential profile both AMS QWs AIVSMS QWs, alterations dipole moment matrix elements energy levels adhered potential. According to...

10.1088/1555-6611/ab25e3 article EN Laser Physics 2019-08-27

Herein, the total optical absorption coefficient (TOAC) and electronic characteristics of asymmetric triple Ga[Formula: see text]Al[Formula: text]As/GaAs (A model) text]In[Formula: (B quantum wells (QWs) have been examined related to well widths (WWs). For TOAC, we first varied all WWs equally, then kept a WW constant changed other two WWs. The wavefunctions (WFs), subband energies probability densities (ATQW) with different QW shapes under effective mass approach were determined by solution...

10.1142/s0217979219501753 article EN International Journal of Modern Physics B 2019-07-10

Herein, the electronic properties of double Ga1-x Alx As/GaAs quantum wells (A model) and Inx (B have been examined related to well width. The wave functions, subband energies probability densities these systems under effective mass approach were determined by solution Schrödinger equation. According results obtained, major diversities A B models are energy gap. For model, GaAlAs is barrier GaAs well. Whereas for GaInAs Also, potential depth levels model continuously smaller than model....

10.17776/csj.520766 article EN Cumhuriyet Science Journal 2019-06-30

Herein, the electronic characteristics of asymmetric triple Ga1-x Alx As/GaAs quantum wells (A model) and Inx (B have been examined as dependent on Al In concentration. The energy levels, wave functions finding probability electron in well (QW) these systems under effective mass approach were concluded by Schrödinger equation solution. According to our results, main differences between models A B are gap. For model, GaAlAs is barrier GaAs well. Whereas for GaInAs Also, levels potential...

10.17776/csj.652216 article EN Cumhuriyet Science Journal 2020-09-28
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