A5029949966- ZnO doping and properties
- Thin-Film Transistor Technologies
- Graphene research and applications
- Silicon Nanostructures and Photoluminescence
- Ga2O3 and related materials
- Diamond and Carbon-based Materials Research
- Nanowire Synthesis and Applications
- Silicon Carbide Semiconductor Technologies
- Copper-based nanomaterials and applications
- Quantum Dots Synthesis And Properties
- Luminescence Properties of Advanced Materials
- Carbon Nanotubes in Composites
- Semiconductor materials and devices
- 2D Materials and Applications
- Gas Sensing Nanomaterials and Sensors
- Chalcogenide Semiconductor Thin Films
- MXene and MAX Phase Materials
- Radiation Detection and Scintillator Technologies
- Perovskite Materials and Applications
- Advanced Photocatalysis Techniques
- GaN-based semiconductor devices and materials
- Silicon and Solar Cell Technologies
- Semiconductor materials and interfaces
- Advanced ceramic materials synthesis
- Copper Interconnects and Reliability
Xiamen University of Technology
2020-2025
University of Science and Technology Liaoning
2025
Shenzhen Polytechnic
2025
Xiamen University
2015-2024
Beijing Information Science & Technology University
2024
City University of Hong Kong, Shenzhen Research Institute
2017
The University of Sydney
2008-2014
Commonwealth Scientific and Industrial Research Organisation
2009-2014
UNSW Sydney
2014
Materials Science & Engineering
2009-2012
It is demonstrated that Sr<sub>5</sub>(PO<sub>4</sub>)<sub>3</sub>Cl:Eu<sup>2+</sup> blue-emitting phosphor features good thermal ability, high color purity and a suitable candidate for the application in near-UV w-LEDs.
Abstract Ga 2 O 3 is a wide bandgap semiconductor suitable for solar‐blind photodetection, but there exist two issues ‐based photodetectors: first, it difficult to achieve reliable p‐type and therefore form homojunction photodetector, the other related with slow response speed of photodetectors. In this work, self‐powered photodetector fast using p‐GaN/i‐Ga /n‐Ga (pin) heterojunction fully depleted active region realized, where i‐Ga serves as main light‐absorbing region. The device exhibits...
Nanophase nc–Si/a–SiC films that contain Si quantum dots (QDs) embedded in an amorphous SiC matrix were deposited on single-crystal silicon substrates using inductively coupled plasma-assisted chemical vapor deposition from the reactive silane and methane precursor gases diluted with hydrogen at a substrate temperature of 200 °C. The effect dilution ratio X (X is defined as flow rate hydrogen-to-silane plus gases), ranging 0 to 10.0, morphological, structural, compositional properties films,...
Nanocrystalline silicon thin films were deposited on single-crystal and glass substrates simultaneously by inductively coupled plasma-assisted chemical vapor deposition from the reactive silane reactant gas diluted with hydrogen at a substrate temperature of 200 °C. The effect dilution ratio X (X is defined as flow rate to gas), ranging 1 20, structural optical properties films, extensively investigated Raman spectroscopy, X-ray diffraction, Fourier transform infrared absorption UV/VIS...
Despite major advances in the fabrication and characterization of SiC related materials, there has been no convincing evidence synthesis nanodevice-quality nanoislanded films at low, ultralarge scale integration technology–compatible process temperatures. The authors report on a low-temperature (400°C) plasma-assisted rf magnetron sputtering deposition high-quality nanocrystalline made uniform-size nanoislands that almost completely cover Si(100) surface. These are chemically pure, highly...
Silicon thin films with a variable content of nanocrystalline phase were deposited on single-crystal silicon and glass substrates by inductively coupled plasma-assisted chemical vapor deposition using silane precursor without any hydrogen dilution in the low substrate temperature range from 100 to 300 degrees C. The structural optical properties are systematically investigated Raman spectroscopy, x-ray diffraction, Fourier transform infrared absorption UV/vis scanning electron microscopy...
Abstract Gallium oxide (Ga 2 O 3 ) emerges as the most promising semiconductor for next‐generation solar‐blind UV photodetectors (SBPDs) because of its ultra‐wide bandgap 4.85 eV. However, so far Ga based SBPDs still suffer from problems such high dark current and slow response speed. Herein, fabrication metal‐semiconductor‐metal (MSM) structures with performance using high‐quality epitaxial thin films grown by molecule beam epitaxy (MBE) is reported. The are highly sensitive to spectrum...
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Abstract The inverted perovskite solar cells based on hole‐selective self‐assembled molecules (SAMs) have been setting new efficiency benchmarks. However, the agglomeration of SAM and lack defect passivation ability are two critical issues that need to be addressed. It is demonstrated by blending co‐adsorbent 4‐phosphoricbutyl ammonium iodide (4PBAI) with 4‐(7H‐dibenzo[c,g]carbazole‐7‐yl) phosphonic acid (4PADCB), enhanced homogeneity, conductivity, better energy levels can realized for...
An innovative and effective approach based on low-pressure, low-frequency, thermally nonequilibrium, high-density inductively coupled plasmas is proposed to synthesize device-quality nanocrystalline silicon (nc-Si) thin films at room temperature with very competitive growth rates. The crystallinity microstructure properties (including crystal structure, volume fraction, surface morphology, etc.) of this nanostructured phase Si can be effectively tailored in broad ranges for different device...
High quality ZnO nanowires (NWs) were grown on a graphene layer by hydrothermal method. The NWs revealed higher uniform surface morphology and better structural properties than SiO2/Si substrate. A low dark current metal–semiconductor–metal photodetector based with Au Schottky contact has also been fabricated. displays of 1.53 nA at 1 V bias large UV-to-visible rejection ratio (up to four orders), which are significantly improved compared conventional NW photodetectors. improvement in UV...
Yellow emitting Sm 3+ -doped NaBa 1-x BO 3 (0.01 ≤ x 0.13) phosphors were synthesized by conventional solid state reaction method. The phase structure and luminescence properties of the as-prepared investigated. These can be effectively excited 403 nm near-ultraviolet light feature a satisfactory yellow performance. emission peaks are observed at 560 nm, 603 650 originating from transitions 4 G 5∕2 → 6 H , 7∕2 9∕2 respectively. Investigation concentration-dependent spectra indicates that...
AACVD ZnO film growth as a function of doping concentration.
Abstract This work reports the fabrication of high performance solar‐blind deep‐UV photodetectors using (In x Ga 1 − ) 2 O 3 thin films grown on Al (0001) substrates. The In contents in are controlled at = 0, 0.1 and 0.2, whereas a higher content leads to phase segregation . bandgaps tuned from 4.93 eV for 4.67 0.2 0.8 Schottky‐type based metal−semiconductor−metal structure were fabricated. 0.9 photodetector is highly sensitive UV spectrum achieves large on/off current ratio over 10 8 ,...
Two-dimensional transition metal dichalcogenides (TMDCs) are widely used in electronic and optoelectronic devices. However, the conventional chemical vapor deposition (CVD) method is difficult to synthesize large-area monolayer WS2 nanosheets stably, which limits application of field photoelectric detection. In this work, we propose an innovative NaCl-assisted CVD that allows freely adjustable substrate positions for synthesizing nanosheets. The obtained maximum grain size up 30 μm....
A photodetector based on Ga 2 O 3 thin films via post-annealing in oxygen plasma features excellent overall performance with an ultralow dark current of 44 fA, a high specific detectivity 1.45 × 10 16 Jones, decay time 58 ms, etc. (@20 V).
One-dimensional ZnO nanostructures were successfully synthesized on single-crystal silicon substrates via a simple thermal evaporation and vapour-phase transport method under different process temperatures from 500 to 1000 °C. The detailed in-depth analysis of the experimental results shows that growth at 500, 800, °C is governed by mechanisms. At low temperature °C, feature flat smooth tips, their primarily vapour-solid mechanism. an intermediate 800 cone-shape self-catalyzed saturated...
An advanced inductively coupled plasma (ICP)-assisted rf magnetron sputtering deposition method is developed to synthesize regular arrays of pear-shaped ZnO nanodots on a thin SiNx buffer layer pre-deposited onto silicon substrate. It shown that the growth obey cubic root-law behavior. also synthesized are highly-uniform, controllable by experimental parameters, and feature good structural photoluminescent properties. These results suggest this custom-designed ICP-based technique very...