A5046684818- Solid State Laser Technologies
- Photorefractive and Nonlinear Optics
- Luminescence Properties of Advanced Materials
- Advanced Fiber Laser Technologies
- 2D Materials and Applications
- Graphene research and applications
- Nanowire Synthesis and Applications
- Glass properties and applications
- Laser Design and Applications
- Quantum Dots Synthesis And Properties
- Chalcogenide Semiconductor Thin Films
- Photonic Crystal and Fiber Optics
- Perovskite Materials and Applications
- MXene and MAX Phase Materials
- Acoustic Wave Resonator Technologies
- Adsorption and biosorption for pollutant removal
- Pickering emulsions and particle stabilization
- Advanced Semiconductor Detectors and Materials
- Metabolism and Genetic Disorders
- Carbon and Quantum Dots Applications
- Thermal Radiation and Cooling Technologies
- Optical properties and cooling technologies in crystalline materials
- Ga2O3 and related materials
- Laser-Matter Interactions and Applications
- Covalent Organic Framework Applications
Chongqing Institute of Green and Intelligent Technology
2015-2024
Shanghai Institute of Optics and Fine Mechanics
2010-2015
Université Claude Bernard Lyon 1
2015
Chinese Academy of Sciences
2010-2015
Institut Lumière Matière
2015
Centre National de la Recherche Scientifique
2015
University of Chinese Academy of Sciences
2010-2014
Abstract Germanium selenide monolayer is promising in photoelectric applications for its natural p‐type semiconductor and complicated band structures. Basic experimental investigations of few‐to‐monolayer germanium are still absent; major scientific challenge to develop techniques controllably thinned monolayers. In this study laser on SiO 2 /Si substrates demonstrated. A broad photoluminescence spectrum with eight continues peaks observed from visible infrared wavebands centered at ≈589,...
Abstract Heterostructural engineering of atomically thin 2D materials offers an exciting opportunity to fabricate sharp interfaces for optoelectronic devices. Herein, GeSe/WS 2 heterojunction devices composed WS (n‐type) and few‐layer GeSe (p‐type), are fabricated by transferring mechanically exfoliated chemical vapor deposition (CVD)‐grown . Excellent rectification behavior is observed from the I−V characteristics The reverse photocurrent increases more rapidly than forward under a 635 nm...
Highly sensitive short-wave infrared (SWIR) detectors, compatible with the silicon-based complementary metal oxide semiconductor (CMOS) process, are regarded as key enabling components in miniaturized system for weak signal detection. To date, high photogain devices greatly limited by a large bias voltage, low-temperature refrigeration, narrow response band, and complex fabrication processes. Here, we demonstrate detectors working SWIR region at room temperature, which use graphene charge...
Field-effect phototransistors feature gate voltage modulation, allowing dynamic performance control and significant signal amplification. A field-effect phototransistor can be designed to inherently either unipolar or ambipolar in its response. However, conventionally, once a has been fabricated, polarity cannot changed. Herein, polarity-tunable based on graphene/ultrathin Al2O3/Si structure is demonstrated. Light modulate the gating effect of device change transfer characteristic curve from...
We developed a non-mechanical straining method to simultaneously modulate the bandgap and photoluminescence (PL) quantum efficiency of synthesized molybdenum disulfide (MoS2) monolayer on SiO2, by vacuum annealing subsequent quick cooling in ethanol. Influences thermal treatments at different temperatures from 100 °C 600 PL Raman spectra MoS2 monolayers are reported. A maximum peak intensity, twice that untreated counterparts under same measurement conditions, was observed treating...
Few-to-monolayer germanium selenide, a new IV-VI group layered material recently fabricated by mechanical exfoliation and subsequent laser thinning, is promising in very fast broadband optoelectronic applications for its excellent stability, complicated band structures, inert surface properties, being natural p-type semiconductor. However, large-scale production of such few-layer GeSe devices with superior performance still early stages. In this study, field-effect transistors made direct...
Hybrid graphene/silicon heterojunctions have been widely utilized in photodetectors because of their unique characteristics high sensitivity, fast response, and CMOS compatibility. However, the photoresponse is restricted by reflectance planar silicon (up to 50%). Herein, an improved graphene/Si detector with excellent light absorption performance proposed demonstrated directly growing graphene on surface nanoholes (SiNHs). It shown that combination SiNHs conformal provides superior...
A Nd:LYSO crystal has been grown by the Czochralski technique. The cell parameters were analyzed with X-ray diffraction (XRD). Judd-Ofelt intense Ω2,4,6 obtained to be 2.65, 5.75, and 7.37×10-20 cm2, respectively. absorption emission cross sections branching ratios calculated. large section (6.14×10-20 cm2) broad band (5 nm) around 811 nm indicate that this can pumped efficiently laser diodes. from 4F3/2 multiplet shows is a promising medium for ultrashort pulse lasers. Pumped diode, maximum...
The spectroscopic characteristics of Tm:CaYAlO4 crystal were studied. Continuous wave laser operation at 2 μm was achieved with a 6 at.% (Tm:CYA) pumped by fiber-coupled diode. emits maximum output power 4.3 W slope efficiency as high 46.7%. In addition, wavelength tuning experiment on Tm:CYA performed showing the could be continuously tuned from 1861 to 2046 nm using an intracavity CaF2 prism, suggesting potential this for ultrashort pulse generation mode-locking.
The continuous wave (CW) and passively Q-switched performances of Nd:CaYAlO(4) crystal with both a- c-cut were demonstrated. CW output powers 1.15 W 1.26 obtained under the pump power 8.96 slope efficiencies 15.2% 16.8% for samples, respectively. As a result, new dual-wavelength all-solid-state lasers at 1080 nm 1081 achieved crystal. By using Cr(4+):YAG wafer as saturable absorber, we performed Q-switching experiments. highest average shortest pulse widths measured to be 0.798 W, 10.6 ns 0.537 9.6
An Nd-doped Lu(1.5)Y(1.5)Al(5)O(12) (Nd:LuYAG) crystal was obtained by Czochralski method. Absorption and emission spectra were recorded at low room temperature. Continuous wave (CW) passively Q-switched laser operations of Nd:LuYAG were, to our knowledge, demonstrated for the first time. A CW output power 1.67 W with slope efficiency 39.8% obtained. In operation, shortest pulse width, largest energy, highest peak achieved be 9.6 ns, 61.7µJ, 6.4 kW, respectively, Cr(4+):YAG crystals as...
Three mixed crystals, Nd:GdYAG, Nd:LuYAG, and Nd:GdLuAG, were grown by Czochralski method. We report the continuous-wave (CW) Nd:GdLuAG laser operation under diode pumping. The maximum output powers are 4.11, 5.31, 7.47 W, with slope efficiency of 73.0, 55.3, 57.1%, respectively. With replacing Lu3+ or Y3+ ions large Gd3+ ions, pump increases.
The continuous wave (CW) and passively Q-switched performances of Nd:LuAG crystal were demonstrated. With a laser diode as pump source, the CW output power 2.18 W was obtained under 4.62 W, corresponding to optical conversion efficiency 47.2% slope 52.2%. For Q-switching experiments, shortest pulse width, largest energy, highest peak measured be 12 ns, 50.6 μJ, 4.21 kW, respectively.