ConspectusElectronics manufacturing involves Cu electrodeposition to form 3D circuitry of arbitrary complexity. This ranges from nanometer-wide interconnects between individual transistors increasingly large multilevel intermediate and global scale on-chip wiring. At larger scale, similar technology is used micrometer-sized high aspect ratio through-silicon vias (TSV) that facilitate chip stacking printed circuit board (PCB) metallization. Common all these applications void-free filling...

On the basis of a set machine learning predictions glass formation in Ni–Ti–Al system, we have undertaken high-throughput experimental study that system. We utilized rapid synthesis followed by structural and electrochemical characterization. Using this dual-modality approach, are able to better classify amorphous portion library, which found be with full width at half maximum (fwhm) >0.42 Å–1 for first sharp X-ray diffraction peak. Proper phase labeling is important future efforts....

Economic CO2 conversion to CO or syngas production requires product-selective, high-throughput, and durable electrolyzers. High-surface-area nanocatalysts combined with gas-diffusion layers (GDLs) enable high flux but can suffer from ineffective catalyst utilization, premature degradation, flooding of the GDL that limit electrolyzer operation. Herein, a layer (CL) composed highly conductive bed high-aspect-ratio Ag nanowire (Ag NW) electrocatalysts is integrated nonconductive porous...

Recent advances in rapid prototyping technologies have generated a surge of users and applications for additive manufacturing. Driving this is the availability easy-to-use integrated software/hardware platforms that can directly convert computer aided design file into fabricated object, accelerating design-build-test cycle. Despite these advances, similar shift to fully software-reconfigurable electrodeposition-based has yet emerge. Current commercial electrodeposition fabrication techniques...

Bottom-up Cu deposition in metallized through silicon vias (TSV) depends on a co-adsorbed polyether–Cl− suppressor layer that selectively breaks down within recessed surface features. This work explores when formation of the blocking is limited by flux Cl−. constraint leads to transition from passive surfaces active partway via sidewall due coupling between and breakdown as well topography. The impact Cl− concentration hydrodynamics phase its potential-dependent examined. onset suppression...

Microscopic, spatially controlled, and highly efficient bipolar electrochemistry can be performed on an electrically-floating macroscopic conductive substrate using a tool we call the Scanning Bipolar Cell (SBC). The operating principle for SBC is that current follows path of least resistance. A high ohmic potential drop generated in electrolyte adjacent to by moderate conductivity with microjet cell geometry, inducing localized charge transfer beneath microjet. equal opposite redox...

Robust, void-free Cu electrodeposition in high-aspect ratio features relies on careful tuning of electrolyte additives, concentrations, and electrochemical parameters for a given feature dimension or wafer pattern. Typically, electronics manufacturing microscale larger (i.e., microvias, through-holes, high-density interconnects) employs CuSO 4 –H 2 SO containing millimolar levels chloride and, at minimum, micromolar polyether suppressor. Research optimization efforts have largely focused the...

Copper electrodeposition processes for filling metallized through-hole (TH) and through-silicon vias (TSV) depend on spatially selective breakdown of a co-adsorbed polyether-chloride adlayer within the recessed surface features. In this work, co-adsorption-dependent suppression model that has previously captured experimental observations localized Cu deposition in TSV is used to explore TH Simulations potentiodynamic galvanostatic are presented. An appropriate applied potential or current...

This work examines the filling of Through Silicon Vias (TSV) by Ni deposition from a NiSO4 + NiCl2 H3BO3 electrolyte containing branched polyethyleneimine suppressor. Feature occurs due to interaction transport limited suppressor adsorption and its consumption potential dependent metal deposition. The between surface topography yields sharp transition passive active within TSV. is associated with significant incorporation suppressor, or components, deposit that results in grain refinement...

Copper electrodeposition from a CuSO 4 —H 2 SO electrolyte containing polyether suppressor and (0 to 100) μ mol∙L −1 Cl − is examined using 25 m diameter microdisk electrode. Optical imaging during cyclic voltammetry galvanodynamic measurements reveal hysteresis, overpotential inversions, the morphological evolution accompanying breakdown of polyether-chloride inhibition layer. Simulations involving co-adsorption suppressor-halide adlayer its subsequent capture positive feedback negative...

Abstract Bipolar electrochemical displacement (BED) enables direct‐write electrodeposition on a conducting substrate that has no electrical connection. We demonstrate this phenomenon using nickel deposition coupled to the equal and opposite of copper. The driving force for BED is solution potential gradient generated by specially configured rastering microjet cell. self‐limiting based quantity metal available from substrate. Finite‐element method simulations are used show how coupling...

Computational predictions of copper deposition in millimeter size through-silicon vias (mm-TSV) are presented based on localized breakdown a co-adsorbed polyether-chloride suppressor layer. The model builds upon previous work Cu microscale TSV and through-holes by incorporating 3D fluid flow calculations to more effectively evaluate chemical transport cupric ion additives, both which critical adlayer formation disruption within the via. Simulations using potentiostatic potentiodynamic...

Silica shell-isolated Au nanoparticles are used as reporters for nanoparticle enhanced Raman spectroscopy (SHINERS) measurements to track and map the coverage state of surfactant additives during electrochemical deposition. The propensity a sub-monolayer Au@SiO 2−x remain segregated on advancing surfaces Cu Damascene electrodeposition is demonstrated including enrichment (dilution) concave (convex) surface segments. local sulfonate-terminated disulfide (SPS) and/or thiolate (MPS) accelerator...

The mechanism underlying <?CDATA ${{Bi}}^{3+}$?> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msup> <mml:mrow> <mml:mi mathvariant="italic">Bi</mml:mi> </mml:mrow> <mml:mn>3</mml:mn> <mml:mo>+</mml:mo> </mml:msup> </mml:math> -stimulated bottom-up Au filling and self-passivation in trenches vias slightly alkaline ${{Na}}_{3}{Au}{\left({{SO}}_{3}\right)}_{2}+{{Na}}_{2}{{SO}}_{3}$?> <mml:msub> mathvariant="italic">Na</mml:mi> </mml:msub>...

We describe electrolyte design for bipolar electrochemical growth and patterning of a range materials on an electrically floating substrate using the scanning cell (SBC). In SBC, electrodeposition is driven by local potential variation generated beneath rastering microjet anode connected to far-field cathode. Metal reduction occurs when approached, provided possesses suitable reducing agent that undergoes oxidation across far-field. use series metal reactions (Ni, Cu, Au, Ag) cover wide...

The microstructure of copper filled through silicon vias deposited in a CuSO

Bipolar electrochemistry involves intricate coupling of ionic migration in the electrolyte, charge transfer kinetics equal and opposite oxidation reduction chemistries, thermodynamic relationship bipolar couple. Finite element method simulations are used to explore these coupled phenomena scanning cell (SBC), an experimental system we recently introduced. We generalize simulation results through development scaling relationships based on a linearized equivalent circuit model comprised...

The microstructure and crystallographic texture of copper electrodeposits in millimeter scale through silicon vias are characterized using electron backscatter diffraction. deposits obtained from additive-containing CuSO 4 -H 2 SO electrolytes characteristic the superconformal deposition process, with growth textures columnar grains consistent previous findings smaller TSV. microstructure, like filling evolution it records, changes substantially chloride concentration for concentrations...

Steel is one of the most manufactured materials in modern society, with 1.9 billion metric tons produced annually for use building materials, vehicles, wind-turbines, and appliances, among many other applications. As you might expect something so ubiquitous, technology used to manufacture steel also quite mature, having been first identified over 4,000 years ago heavily industrialized 19th century. The general approach mine iron ore from earth’s crust refine that metallic (i.e., ironmaking)...

The production of steel accounts for approximately 7% global carbon dioxide emissions, the majority which is produced during conversion iron ore to metal (“ironmaking”). Conventional ironmaking predominantly utilizes blast furnaces melt with coal and other minerals produce crude steel. effort decarbonize pressuring high emissions processes, like ironmaking, transition low-carbon alternatives. To achieve this goal, Electra has developed an acidic electrolysis-hydrometallurgical process...

Since the beginning of microelectronics era, ongoing miniaturization transistors has been accompanied by development ever more intricate multilevel Cu interconnects. Presently these range from nanoscale on-chip wiring to 3D TSV for chip stacking along with related structures advanced packaging and printed circuit board applications. Electrodeposition a key process void-free filling recessed patterned features virtue surfactant-mediated superconformal growth. This lecture will detail how...