A5031100154- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced DC-DC Converters
- Induction Heating and Inverter Technology
- Integrated Circuits and Semiconductor Failure Analysis
- Radiation Effects in Electronics
- Multilevel Inverters and Converters
Kumoh National Institute of Technology
2022-2025
Pusan National University
2024
TID effects occur in MOS-gated transistors radiation environments where proton and gamma-rays irradiate the devices. seriously affect electrical characteristics of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). They can eventually result malfunction power systems when exposed to long-term conditions. We irradiated protons into 1.2 kV SiC MOSFETs evaluated change properties analyze TID’s effects. As a experiment, threshold voltage (VT) on-resistance (Ron) decreased because...
Abstract In this study, the effect of applying tilted ion implantation process a 1.2 kV SiC trench metal–oxide–semiconductor field-effect transistor on electrical characteristics devices was investigated. P-shielding with protects both sidewall and bottom from an electric field, enabling stable high-voltage operation, cell pitch can be reduced by using only one channel. Moreover, has advantage not requiring additional masks. For comparative analysis, tilt angle for into changed in TCAD...
The 1.2 kV SiC MOSFET with a buried oxide was verified to be effective in improving switching characteristics. It is crucial reduce the gate–drain charge (QGD) of devices minimize loss (Etotal). split gate and device buffered have been proposed by previous studies QGD devices. However, both common issue concentration electric field at oxide. In this paper, we propose suppress crowding effect We analyzed specific on-resistance (Ron,sp), maximum off state (Eox,max) according width (WBO)...
Abstract 1.2 kV silicon carbide (SiC) MOSFETs with buffered oxide, which have been developed to reduce the gate–drain charge ( Q GD ), problem that electric field is crowded at corners of oxide. In this paper, SiC tapered buffer oxide are proposed suppress crowding effect. The devices having an angle 40° demonstrate a maximum gate in off-state E ox,max ) 1.87 MV·cm −1 , achieving 13.4% reduction compared conventional structure. Additionally, it verified output characteristics can be improved...
We investigated the effects of gate bias regarding degradation electrical characteristics during gamma irradiation. Moreover, we observed punch through failure 1.2 kV rated commercial Silicon Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) due to influence bias. In addition, threshold voltage (VT) and on-resistance (Ron) SiC MOSFETs decreased significantly by extracted concentration carriers fixed charge (QF) in oxide using N-type MOS capacitors Transmission Line...
A design of a 1.2 kV SiC MOSFET for reliable characteristics against process dispersion is presented. The profile p-base concentration was designed in consideration incomplete ionization and electric field crowding at the gate oxide. structure RA-JTE optimized surface charge density critical dimension. with parameters showed dispersion.
SiC trench Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) has an advantage of a low on-resistance due to small cell pitch between unit cells, and is widely used for power electronics requiring high conversion efficiency. However, there electric-field crowding problem at the gate oxide. Since physical destruction oxide irrecoverable, researches design that can improve reliability MOSFET by suppressing electric field are needed. This paper implemented structure in which p-shielding...