A5042975459- Silicon Carbide Semiconductor Technologies
- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Electromagnetic Compatibility and Noise Suppression
- Advanced DC-DC Converters
- Radio Frequency Integrated Circuit Design
- Thin-Film Transistor Technologies
- Ga2O3 and related materials
- Low-power high-performance VLSI design
- Semiconductor Quantum Structures and Devices
- Induction Heating and Inverter Technology
- Electrostatic Discharge in Electronics
Alliance Université-Entreprise de Grenoble
2023
IRT M2P
2018-2021
Laboratoire Plasma et Conversion d'Energie
2019-2021
École Nationale Supérieure d'Électrotechnique, d'Électronique, d'Informatique, d'Hydraulique et des Télécommunications
2020
Institut National Polytechnique de Toulouse
2020
This article shows both theoretical and experimental analyses of a fully integrated CMOS active gate driver (AGD) developed to control the high dv/dt GaN transistors for 48 400 V applications. To mitigate negative effects in high-frequency spectrum emission, an original technique is proposed reduce with lower switching losses compared classical solutions. The AGD based on subnanosecond delay feedback loop, which reduces current only during sequence transients. Hence, di/dt can be actively...
In this paper, a CMOS gate driver in 180nm technology is presented. The implements an integrated and independent ultra-fast dV/dt control circuit dedicated to manage switch-on transients for GaN HEMT technology. order mitigate detrimental effect EMI spectrum wide bandgap transistors, novel method reduce without increasing so much switching losses proposed. A comprehensive benchmark with the classical also presented, where resistance typically adjusted. Simulations are conducted show...
This paper presents an AGD (active gate driver) implemented with a low voltage CMOS technology to control the dv/dt sequence of (100V) and high (650V) GaN power transistors. Such can reduce fast switching devices reduced impact on losses. In case both transistors, such must have total response time lower than 1ns. Therefore, introducing feedback loop requires specific design very bandwidth (550MHz). Moreover, probing vDS its derivative is quite challenging, as level higher driver supply. The...
The objective of this work is to show the intrinsic limitations a CMOS technology for realization an Active Gate Driver (AGD) with active dv/dt control loop. Due theoretical study using first order models submicron transistors, main equations providing link between feedback loop bandwidth and specific parameters are obtained. This optimization allows us determine limits in terms silicon area. Then, it becomes possible most appropriate switching method implement depending on application...
This work describes two designed and fabricated circuits for power device integration in 650 V e-mode GaN-on-Si technology gives their main measured characteristics. The first circuit is a voltage reference to compensate process, temperature (PVT). advantage of this over state-of-the-art its performance regulation, low current consumption surface required (only 100 µm x 60 the prototype built). second zero-crossing detector that also be insensitive process variations. It exhibits stable...