Optically active and electrically excitable erbium complexes on silicon are made by wet-chemical synthesis. The single-crystalline Er–Si–O compound is formed coating a Si(100) substrate with an ErCl3∕ethanol solution, followed rapid thermal oxidation annealing. Room-temperature Er-related 1.53μm photoluminescence observed peak linewidth as small 4meV. can be excited directly into the Er intra-4f states, or indirectly, through photocarriers. concentrations high 14at.% achieved, incorporated...

Monolithic integration of a 1.55-μm InGaAsP/InP distributed feedback (DFB) laser and an electroabsorption (EA) modulator was studied. The difference between the lasing photon energy bandgap waveguide designed to be 30-40 meV, taking into account linewidth-enhancement factor zero-bias absorption loss. integrated devices were grown by three-step vapor phase epitaxy (VPE). CW threshold current at 20°C DFB part with buried heterostructure 30-60 mA breakdown voltage strip-loaded stripe geometry...

Erbium-related 1.54 μm emission dynamics of Er-doped ZnO thin films has been investigated for the different excitation conditions. The was achieved either by exciting indirectly Er3+ ions due to an electron–hole-mediated process or directly discrete energy levels ions. There is no change in spectrum feature spite conditions, whereas dramatic can be seen rise time emission. shorter observed indirect implies efficiency superior direct

Erbium-doped ZnO (ZnO:Er) thin films were fabricated by the KrF excimer laser ablation technique, which is a useful and simple technique to dope Er atoms on order of 1020 cm−3 into host material. As-prepared ZnO:Er showing strong c-axis orientation with hexagonal crystalline structure indicate low electrical resistivity 6.4×10−3 Ω cm. The sharp intense photoluminescence (PL) at 1.54 μm originating from intra-4f transition in Er3+ ions as well PL UV region observed even room temperature....

Er-doped nanocrystalline Si (nc-Si) waveguides were fabricated on substrates and investigated by optical pumping. A stimulated emission at 1540 nm was demonstrated room temperature. The sizes of the nc-Si 5000 nm×200 nm×L, where L is cavity length changed from 1 to 10 mm. Superlinear outputs observed for longer than 3 threshold output occurs in order MW/cm2, depend waveguides. large reduction decay lifetimes light a cleavage facet when pumping power density exceeded thresholds indicating an...

Er x Y 2 − SiO 5 (x=0–2) films have been fabricated on Si(100) substrates by the sol-gel method. Enhanced Er3+ photoluminescence of around 30 times for ErxY2−xSiO5 (x=0.1) film was observed compared with pure Er2SiO5 at wavelength pump 654 nm. Reduced upconversion effect and decreased nonradiative transient rate are two main reasons enhanced luminescence in new ErxY2−xSiO5. Above 10 dB optical gain can be achieved 1 mm length waveguide under mW pumping power, indicating it is sought...

Extraordinary infrared photoluminescence efficiency was found for Er2SiO5 film by optimizing the composition of Yb additions on SiO2/Si substrates. Above two orders magnitude enhanced 1.53 μm Er3+ Er0.1Yb1.9SiO5 substrate obtained pumping at 980 nm compared with pure Si 654 nm. All Er ions are optically active. The decreased nonradiative transient rate leads to extraordinary in film. It indicated that is sought candidate material compact waveguide amplifiers and emitters silicon photonics...

X-ray absorption (XAS) and emission (XES) spectroscopy near B K C edges have been performed on metallic ($\ensuremath{\sim}0.1\phantom{\rule{0.3em}{0ex}}\mathrm{at.}\phantom{\rule{0.2em}{0ex}}%$ B, B-diamond) semiconducting ($\ensuremath{\sim}0.03\phantom{\rule{0.3em}{0ex}}\mathrm{at.}\phantom{\rule{0.2em}{0ex}}%$ N, BN-diamond) doped diamond films. Both XAS XES spectra show a partial density of states (PDOS) with the Fermi energy $185.3\phantom{\rule{0.3em}{0ex}}\mathrm{eV}$, there is no...

Er silicates have been fabricated on SiO2/Si(100) substrates by the sol-gel method. In contrast to Si(100) substrates, which Er2SiO5 phase in general crystallizes, α-Er2Si2O7 with photoluminescence (PL) main peak at 1531 nm formed 1200 °C. The integrated PL intensity of was about five ten times stronger than that phase, and showed a relatively long decay time (100–300 μs) several tens microseconds phase. Excess O from SiO2 layer may lead formation

ErxY2−xSiO5 and ErxYbyY2−x−ySiO5 crystalline thin films were investigated to apply the high-gain media for silicon photonics. In addition sol–gel method, directed self-assembly approach, using layer-by-layer deposition techniques, was also introduced improve crystallinity. The relaxation processes in Er ions discussed clarify contribution of energy transfer cooperative upconversion. After optimization content, a Si photonic crystal slot waveguide amplifier fabricated, 30  dB/cm modal gain...

Er-doped nanocrystalline Si thin films have been controllably prepared over the Er density of 1019–1021 cm−3 using a prescribed amount in bulk target by laser ablation. Intense photoluminescence at 1.54 μm originating from intra-4f shell transitions Er3+ ions has observed. The increase cannot immediately result linear Er3+-emission intensity. time response measurement indicated that change rise emission directly shows are excited energy transfer associated with recombination electron–hole...

The Er-related 1.54 μm luminescence peak has been observed in erbium-doped InP layers by impact excitation of Er atoms with energetic carriers accelerated electric field. ions were implanted into n-type and Au/Sn ohmic contacts formed on top the surface. sharp at 1.543 was only applying dc voltages between electrodes over temperature range from 77 to 360 K. Neither band-edge emission nor impurity-related observed, although they intense photoluminescence spectra same sample. fine structure...

Integration of light sources on a Si chip is one milestone to establish new paradigm LSI systems, so-called "silicon photonics." In recent years remarkable progress has been made in the wire waveguide technologies for optical interconnection chip. this paper, several Er embedded materials based silicon are surveyed from standpoint application emission and amplification devices photonics. We have concentrated investigate an erbium silicate (Er2SiO5) as source medium To mention particular...

Abstract A CuAlO 2 (CAO) bottom gate top contact p-type thin film transistor (TFT) is demonstrated. The CAO synthesized through a digitally processed DC sputtering (DPDS) technique, employing precise layer-by-layer (LBL) deposition strategy. X-ray diffraction analysis exhibited distinct peaks beyond 600 °C. shows dominant phase along the (004) plane at elevated temperature of 990 fabricated p-TFT exhibits field effect mobility 4.1 cm V −1 s . In addition, characteristics were observed even...

We present a useful and simple technique to prepare controllable Er-doped Si thin films using KrF excimer laser ablation. The sharp intense photoluminescence (PL) at 1.54 μm originating from the intra-4f shell transition in Er3+ ions was observed 18 K up room temperature. Characteristics of PL thermal quenching time decay prepared are very similar those porous and/or amorphous Si. Furthermore, observation emission as-prepared without annealing suggests that Er doping form atomic radical...

We found high crystallographic selectivity in atomic layer epitaxy (ALE) growth of GaAs, comparison with other epitaxial methods. In the temperature dependence GaAs rate, no on (111)A and (110) planes was observed range under condition ALE (100) plane. Also we discussed mechanism selectivity, which believed to be caused by limitation due As desorption. Due self-limiting effect growth, trapezoidal-shaped GaAs/AlGaAs quantum wire structures, 20 nm thickness 50 width, were successfully realized.

A strong enhancement of the Er3+-related 1.54 μm emission was obtained from Er-doped porous silicon (PSi), when host PSi slightly oxidized before Er incorporation. Separate measurements energy transfer and Auger deexcitation between carriers in Si crystallites preoxidized Er3+ ions were measured as functions time or thickness SiO2 interlayer, revealed that a 1 nm order thick interlayer suppressed backflow strongly with only moderate decrease carrier mediated excitation. thin also effective...

Abstract Sm-doped TiO 2 thin films were synthesized by pulsed laser deposition. The luminescence and donor-generation properties of annealed at various temperatures investigated. results showed that Sm-related emissions occurred in the temperature range 500 °C–800 °C. donor densities this two orders magnitude higher than undoped film. effect annealing within window indicates a local fine structural transition ligands around Sm 3+ ions from T d symmetry to lower C 4v one; these are effective...

Abstract ErSiO superlattice crystal (SC) waveguide is demonstrated. ErSiO‐SC film was formed on a SiO 2 /Si substrate. After the preform formation by sol–gel method, high temperature anneal for crystallization performed in Ar atmosphere. Then layer thickness 220 nm. refractive index of estimated to be 1.8 ellipsometry and reflection spectroscopy measurements. To obtain lateral optical confinement, polymer cladding ( n = 1.54) coated strip‐loaded structures with 5 μm width were focused ion...