Abstract In this paper, the GaN-based green micro light-emitting diodes (Micro-LEDs) with various sizes (from 3 to 100 μ m) were fabricated and electro-optically characterized. Atom layer deposition (ALD) passivation potassium hydroxide (KOH) treatment applied eliminate sidewall damage. The size dependence of Micro-LED was systematically analyzed current-versus-voltage current density-versus-voltage relationship. According favorable ideality factor results (<1.5), optimized achieved when...

Developing aluminium gallium nitride deep-ultraviolet (UVC) micro-light-emitting diodes (micro-LEDs) with sufficient power has been a challenge, which particularly limits these devices to various applications. However, advanced fabrication processes have developed enable the demonstration of highly efficient 270 nm UVC micro-LEDs and large-format micro-LED displays high resolution for maskless photolithography. Optical electrical characterizations were performed on sizes ranging from 3 µm...

Abstract The issue of brightness in strong ambient light conditions is one the critical obstacles restricting application augmented reality (AR) and mixed (MR). Gallium nitride (GaN)-based micro-LEDs, renowned for their exceptional stability, are considered foremost contenders AR applications. Nevertheless, conventional heteroepitaxial growth micro-LED devices confront formidable challenges, including substantial wavelength shifts efficiency droop. In this paper, we firstly demonstrated...

Deep-ultraviolet (Deep-UV) micro light-emitting diodes (Micro-LEDs) array greatly benefits various future applications. In this letter, we fabricated Deep-UV Micro-LEDs with different geometries from <inline-formula> <tex-math notation="LaTeX">$10 \times 10\,\,\mu \text{m}$ </tex-math></inline-formula>² to notation="LaTeX">$200 200\,\,\mu </tex-math></inline-formula>², and investigated its application on tristimulus quantum dots converted display. As the scaling,...

Abstract In this paper, the GaN/InGaN multiple quantum wells (MQWs) micro‐light‐emitting diode (micro‐LED) devices of different size with green light emission were fabricated. The ideality factor micro‐LED was discussed. For temperature‐dependent electrical characterization, current–voltage relationship within a temperature category 303–573 K measured. contact resistance between electrodes and GaN exhibited, favorable ohmic achieved for p ‐electrode ‐GaN. Next, effect demonstrated. All...

Ultraviolet band C (UV-C) micro light-emitting diodes (micro-LEDs) provide a high energy light emission of 200–280 nm, which are brilliantly utilized in optogenetics, communications, and fluorescence. However, the limited device efficiency notably restricts grand potential application field. In this work, three types 20 × μm2 UV-C micro-LEDs with peak wavelength 269 nm fabricated by different etching strategies, including an inductively coupled plasma (ICP), post-ICP tetramethylammonium...

This work explores the pivotal role of laser lift-off (LLO) as a vital production process in facilitating integration Micro-LEDs into display modules. We specifically investigate LLO applied to high-performance gallium nitride (GaN)-based green Micro-LED arrays, featuring pixel size 20 × 38 μm on patterned sapphire substrate (PSS). Scanning electron microscopy (SEM) observations demonstrate preservation GaN film and substrate, with no discernible damage. conduct comprehensive analysis...

Abstract Displays based on inorganic micro‐light‐emitting diodes (micro‐LEDs) are highly anticipated for next‐generation technologies. AlGaN‐based deep‐ultraviolet (deep‐UV) micro‐LED as the excitation source quantum dots display with high efficiency was reported in this paper. To achieve optimized electro‐optical performance, deep‐UV micro‐LEDs different electrodes were fabricated and analyzed sizes from 200 × to 10 μm 2 . At same forward bias, devices Ti/Al‐based achieved times injection...

Ultraviolet-A (UVA) micro-LEDs are increasingly garnering attention in fields such as additive manufacturing. However, the majority of these devices currently use heteroepitaxial substrates, where high stress from lattice mismatch leads to strong polarization and dislocation densities, severely limiting optoelectronic performance. This letter explores characteristics homoepitaxially grown UVA with sizes down <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML"...

In this study, we explored the electrical characteristics of micro‐LEDs with various pixel sizes on GaN substrates, demonstrating that small have high current density due to superior spreading. Due p‐electrode ohmic contact's temperature dependence, which is supported by TLM measurements, ideal factor declines as rises. We also show sensitivity in proportion device size at a certain density, susceptible carrier non‐radiative recombination brought surface defects. comprehensively present...

Short‐wavelength ultraviolet (UV‐C) micro light‐emitting diode (Micro‐LED) array greatly benefits the optogenetic applications in neuroscience, optical communications, and maskless lithography. In this work, UV‐C Micro‐LED arrays with each pixel size of 10×10 μm2 were fabricated, nanorods introduced by inductively coupled plasma (ICP) etching eliminated post‐ICP tetramethylammonium hydroxide (TMAH) treatment. The pixel‐level electrical characteristics analyzed, peak wavelength stability...

In the dynamic landscape of display technologies, advent MicroLEDs has sparked a revolutionary shift, promising unparalleled advancements in visual capabilities. This study immerses itself realm GaN‐based MicroLED devices, specifically delving into nuanced effects varying current density and temperature on spectra with gallium nitride substrates. Through meticulous comparative analysis, we unravel optical distinctions between utilizing sapphire Additionally, our exploration extends to...

Aluminum Gallium Nitride (AlGaN) ultraviolet‐C (UV‐C) micro‐light‐emitting diodes (microLEDs) offer significant advantages in terms of convenience, cost‐effectiveness, and environmental friendliness, positioning them as promising candidates for display applications. However, achieving the desired high efficiency scalability large displays with ultra‐fine pixels necessitates substantial progress beyond current experimental outcomes. This study showcases application AlGaN UV‐C microLED panels...

Aluminum Gallium Nitride (AlGaN) ultraviolet‐C (UV‐C) micro‐light‐emitting diodes (microLEDs) offer significant advantages in terms of convenience, cost‐effectiveness, and environmental friendliness, positioning them as promising candidates for display applications. However, achieving the desired high efficiency scalability large displays with ultra‐fine pixels necessitates substantial progress beyond current experimental outcomes. This study showcases application AlGaN UV‐C microLED panels...

In the dynamic landscape of display technologies, advent Micro‐LEDs has sparked a revolutionary shift, promising unparalleled advancements in visual capabilities. This study immerses itself realm GaN‐based MicroLED devices, specifically delving into nuanced effects varying current density and temperature on spectra MicroLEDs with gallium nitride substrates. Through meticulous comparative analysis, we unravel optical distinctions between utilizing sapphire Additionally, our exploration...

GaN-based micro-light-emitting diodes (Micro-LEDs) are regarded as promising light sources for near-eye-display applications such augmented reality/virtual reality (AR/VR) displays due to their high resolution, brightness, and low power consumption. However, the application of Micro-LEDs in high-pixel-per-inch (PPI) is constrained by drop efficiency caused sidewall defects small-sized devices. In this study, a process method involving NH3 plasma pretreatment reduce proposed investigated...

In this paper, the gallium nitride (GaN) free‐standing non‐polar m‐plane micro‐LEDs and polar c‐plane on patterned sapphire substrate with a 550‐nm emission light were fabricated characterized. Compared suffering from strong quantum confined stark effect (QCSE), absence of polarization in devices contributed to lower efficiency attenuation narrower peak color shift elevating current density. Specifically, wavelength for was 11.81 nm 8.12 respectively 1 500 A/cm 2 , droop ratio 50.2% 27.2%...

In this paper, the contact model analysis based on gold (Au) and aluminum (Al) with distinct structures bonding pads of GaN‐based Micro‐LED was proposed. Firstly, fabrication process three different (testing, bottom emitting top structures) 30 −200µm size were introduced. Then, electrical properties testing structure analyzed by extracting series resistances ideality factors. Next, performances two metals evaluated electrically optically throughout injection current at forward bias, leakage...

Displays based on inorganic micro light‐emitting diodes (MicroLED) are highly anticipated for the next‐generation display technologies. Deep‐UV Micro‐LED as excitation source green perovskite quantum dots with high efficiency is demonstrated in this paper. Micro‐LEDs were fabricated different device sizes and lighted‐up a dot film. The peak wavelength of light shows blue shift increasing current density. output intensity 300 × 200 ‐ pixel array each pixel. size 30×30 µm 2 shown distribution map.

In this study, we explored the electrical characteristics of micro-LEDs with various pixel sizes on GaN substrates, demonstrating that small have high current density due to superior spreading. Due p-electrode ohmic contact's temperature dependence, which is supported by TLM measurements, ideal factor declines as rises. We also show sensitivity in proportion device size at a certain density, susceptible carrier non-radiative recombination brought surface defects. comprehensively present...

In this paper, the gallium nitride (GaN) based Micro‐LED was fabricated on a self‐aligned process with hydroxide treatment and ALD passivation from 100 μm down to 3 μm. The different current spreading performance characterized series resistance analysis. Then size‐dependent carrier concentration profile demonstrated via capacitancevoltage measurement, identifying various injection behavior by size. Finally, external quantum efficiency luminance versus density dependence for array device...