Hanim Hussin

ORCID: 0000-0003-0033-4062
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About
Contact & Profiles
Research Areas
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Integrated Circuits and Semiconductor Failure Analysis
  • Innovative Teaching Methods
  • Analog and Mixed-Signal Circuit Design
  • Ferroelectric and Negative Capacitance Devices
  • Experimental Learning in Engineering
  • Carbon Nanotubes in Composites
  • Radiation Effects in Electronics
  • Radio Frequency Integrated Circuit Design
  • Online and Blended Learning
  • Advancements in PLL and VCO Technologies
  • Silicon Carbide Semiconductor Technologies
  • Thin-Film Transistor Technologies
  • Electrochemical Analysis and Applications
  • Semiconductor Quantum Structures and Devices
  • GaN-based semiconductor devices and materials
  • Nanowire Synthesis and Applications
  • Conducting polymers and applications
  • Low-power high-performance VLSI design
  • VLSI and Analog Circuit Testing
  • Multilevel Inverters and Converters
  • Advanced Sensor and Energy Harvesting Materials
  • Microbial Fuel Cells and Bioremediation
  • Diamond and Carbon-based Materials Research

Universiti Teknologi MARA
2015-2024

University of Malaya
2002-2022

Lomonosov Moscow State University
2020

Universiti Teknologi MARA System
2019

Faculty (United Kingdom)
2017

In this review, we summarize the latest advances in development of various flexible sensors structure platforms fabricated by inkjet printing technique. We first explain general type biosensors which includes tactile published recently that highlighted their features and uses, architecture or platform advantages designed platform. For better understanding process, include working system strategy ink jet process for quality effective design wearable applications. Then, reviewed types sensor...

10.1149/1945-7111/ac0e4b article EN Journal of The Electrochemical Society 2021-06-24

Modem education in engineering requires the lectures and syllabus to be an effective innovative. This is point of view produce high talented creative engineers providing solutions industries communities. With regard that, a study on effectiveness developing miniproject Embedded Design Interfacing course has been conducted. was intended measure students' satisfaction teaching learning activities implemented throughout towards their success skills development. A survey distributed students...

10.1109/tale.2017.8252327 article EN 2017-12-01

Organic matter may be converted to energy through various methods, but the most preferable one is Anaerobic Digestion (AD), specifically for biogas production. In sustainable bioenergy production, it can undoubtedly called of widely used methods from feedstock. Over past years, algae waste has become an increasingly acute environmental problem luckily as feedstock produce bioenergy. order improve productivity green algae, this study focused on introduction cobalt (Co) nanoparticles (NPs) in...

10.3311/ppch.20375 article EN cc-by Periodica Polytechnica Chemical Engineering 2023-01-09

This paper is focusing on optimizing harmonic content in Sinusoidal Pulse Width Modulation (SPWM) design. SPWM designed using VHDL and implemented ALTERA (DE2-70 board). output generated by intersection between sine signal triangle signal. Sine the reference waveform carrier waveform. When value large than signal, pulse will start produce to high. And then when triangular signals higher come low. changed changing of number bit, modulation index frequency used this system more width. The...

10.1109/ams.2010.125 article EN 2010-01-01

The rapid scaling of the CMOS technology is causing evaluation from conventional planar MOSFETs to FinFET architecture, particularly in 22 nm and 14 nodes. FinFETs technologies ensure low power usage better area utilization, as well traditional improvements. It was observed that for FinFETs, smaller width fin, characteristics. drain current characteristics NFinFET PFinFET at both linear saturation regime would decrease magnitude fin decreased. Ion/Ioff ratio generally decreases increases....

10.1109/smelec.2014.6920916 article EN 2014-08-01

Microbial fuel cell, as a promising technology for simultaneous power production and waste treatment, has received great deal of attention in recent years; however, generation relatively low density is the main limitation towards its commercial application. This study contributes toward optimization, terms maximization, microbial cell by employing response surface methodology, coupled with central composite design. For this optimization study, interactive effect three independent parameters,...

10.3390/catal11101202 article EN Catalysts 2021-10-01

We present a simulation study on negative bias temperature instability (NBTI) induced hole trapping in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" id="M2"><mml:mrow><mml:msup><mml:mrow><mml:mi>E</mml:mi></mml:mrow><mml:mrow><mml:mi>′</mml:mi></mml:mrow></mml:msup></mml:mrow></mml:math>center defects, which leads to depassivation of interface trap precursor in different geometrical structures high-<mml:math id="M3"><mml:mrow><mml:mi>k</mml:mi></mml:mrow></mml:math>PMOSFET gate...

10.1155/2014/490829 article EN cc-by The Scientific World JOURNAL 2014-01-01

This research is focusing on the geometrical variation effects of carbon nanotube field effect transistor (CNTFET). The characteristics CNTFET are observed based different diameter, oxide thickness and chiral vector. under study includes drain current, ION/IOFF, quantum capacitance as well threshold voltage. work carried out using labtool nanoHUB.org FETToy Simulator which MATLAB script that calculate ballistic I-V characteristic MSL Nanomaterials used to design analyse electronic properties...

10.1149/2162-8777/ab801a article EN ECS Journal of Solid State Science and Technology 2020-04-07

In today’s semiconductor industry, transistor size has been continuously scaled down due to the competition between developers provide a better performance device. Based on Moore’s Law, use of MOSFET technology might end its dimensions’ limitation that affects performance. Carbon Nanotube Field-effect Transistor (CNTFET) become prospect replace carbon nanotube properties (CNT). CNTFET design parameters, changes in diameter CNT and dielectric materials oxide layer significantly affect...

10.1149/2162-8777/ac4ffc article EN ECS Journal of Solid State Science and Technology 2022-01-28

The device dimensions have been consistently scaling down since many developing technologies need smaller and faster-integrated circuits for advancement improvement in both performance density. Carbon nanotube field-effect transistor (CNTFET) is one of the promising that able to improve size speed issues. Nanotube (CNT) channel materials FETs. In CNTFET design process, thickness oxide layer played an important role scalability transistor. purpose this work characterize due scaled thickness....

10.1109/rsm52397.2021.9511584 article EN 2021-08-02

The features of CNT (Nanotube Carbon) are fascinating to study due their unique structural and electrical capabilities. small structure the in Field-Effect Transistor technology can produce a smaller device with better performance. In this work, Taguchi method had been implemented optimize Carbon Nanotube (CNTFET). Minitab 19 software used carry out analysis. Three design parameters (diameter CNT, pitch number CNT) three different sizes each chosen improve CNTFET L27 orthogonal array...

10.36909/jer.14155 article EN cc-by-nc-nd Journal of Engineering Research 2022-01-03

SiGe being one of the most diverse, emerging and richest material for MOSFETs is alluring scientist due to its unique characteristics like high performance, surface channel mobility low threshold voltage as compare that silicon MOSFETs. In spite so much cruciality, performance controlled by several factors resistance junction depth. These urged scientists not relieve on traditional methods meteorology utilize actual potential in terms their application. Hence, a paradigm shift engineering...

10.1063/1.5142125 article EN AIP conference proceedings 2020-01-01

Negative Bias Temperature Instability (NBTI) is one of the most critical reliability problems in nano-scale p-MOSFETs. The NBTI-induced positive charges cause threshold voltage shifts, hence degrading performance device. However, characteristics (PC) FinFET devices are currently not well-understood. In this work, a numerical simulation using an energy profiling technique on 3D structure suggests that sensitive to level and differ considerably over range, agreement with published...

10.1109/edssc.2015.7285126 article EN 2015-06-01

There has been a paradigm shift in the modern teaching and learning method from face-to-face to blended style. However, most of lecturers having difficulty determining whether style can be used as one approach increase student understanding on engineering subject. Aiming explore effectiveness model subjects, an innovative was designed implemented Semiconductor Device course achievement this The research integrate face-to-face, E-learning, groupwork self-work. A survey final examination...

10.1109/iceed.2015.7451515 article EN 2015-11-01

MyUiTM Engineer is a program especially designed for students in semester 5 with cumulative grade point average (CGPA) below 3.0 at the Faculty of Electrical, Universiti Teknologi MARA, Shah Alam. The aim to produce high quality electrical and electronic engineering graduates Malaysia. This paper discusses methodology approach implemented order improve students' (GPA). There were no specific methods used this program. more toward motivation. results show that most who joined had improved...

10.1109/iceed.2016.7856098 article EN 2016-12-01

In this paper, a 90 nm NMOS was designed and fabricate to study its electrical characteristics. ATHENA ATLAS module of SILVACO software are the tools used in simulating performance transistor. The parameters under investigation were V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> , Id-Vg Id-Vd relationship. From simulation result, it shown that gate oxide thickness, channel doping, adjust implant dosage halo implantation contribute...

10.1109/scored.2009.5443057 article EN 2009-01-01

Amorphous carbon (a-C) thin films were deposited on quartz substrate at various temperatures with thermal chemical vapor deposition (CVD) technique using methane gas as precursor. The a-C characterized by Current Voltage (I-V) Measurement and UV-VIS-NIR Spectrophotometer. In this experiment, the pyrolysis process was successful to analyse electrical optical properties of CVD gas. are found significantly vary temperatures. At higher temperature, resistivity is lower thus gives conductivity...

10.1109/icedsa.2010.5503055 article EN International Conference on Electronic Devices, Systems and Applications 2010-04-01

Digital Fundamental Course is an elementary course offered by the Faculty of Electrical Engineering in Universiti Teknologi MARA (UiTM) for semester 1 undergraduate students. Students seem to have difficulty understanding basic concepts a digital systems from lectures, tutorial classes and reference books. Based on initial survey, it found that most students are visual learners who can learn effectively through aids. One popular aids among nowadays video. They would prefer look video...

10.1109/iceed.2017.8251198 article EN 2017-11-01
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