A5025398497- Acoustic Wave Resonator Technologies
- Ferroelectric and Piezoelectric Materials
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advanced MEMS and NEMS Technologies
- MXene and MAX Phase Materials
- Advanced Memory and Neural Computing
- Electronic and Structural Properties of Oxides
- Advanced Fiber Optic Sensors
- Solidification and crystal growth phenomena
- Topological Materials and Phenomena
- Mechanical and Optical Resonators
- Glass properties and applications
- Quantum Computing Algorithms and Architecture
- nanoparticles nucleation surface interactions
- Quantum and electron transport phenomena
- Dielectric properties of ceramics
- Multiferroics and related materials
- Mesoporous Materials and Catalysis
- Aerogels and thermal insulation
- Silicon Nanostructures and Photoluminescence
University of Groningen
2018-2023
Institut de Microelectrònica de Barcelona
2023
University of Twente
2020
Nanoscaled direct and converse piezoelectric responses from sub-100 nm thick epitaxial BiFeO<sub>3</sub> thin films grown by a water-based chemical method.
To obtain crystalline thin films of alpha-Quartz represents a challenge due to the tendency for material towards spherulitic growth. Thus, understanding mechanisms that give rise growth can help regulate process. Here type 2D crystal in amorphous Quartz was analyzed by electron back-scatter diffraction (EBSD). EBSD used measure size, orientation, and rotation crystallographic grains polycrystalline SiO2 GeO2 with high spatial resolution. Individual colonies contain primary secondary single...
Hafnia-based thin films exhibit unconventional ferroelectricity. These materials also show rich polymorphism, and thus temperature field-driven phase transitions, as well oxygen migration. In a bigger context of exploring the synergy between ferroelectricity diffusion-based structural phenomena, here we study temperature-dependent transitions in epitaxial Hf0.5Zr0.5O2(HZO)/La0.67Sr0.33MnO3 (LSMO, bottom electrode) heterostructures. We report topotactic their clear pathways both LSMO HZO...
Piezoelectric quartz SiO2 crystals are widely used in industry as oscillators. As a natural mineral, and its relevant silicates also of interest geoscience mineralogy. However, the nucleation growth is difficult to control not fully understood. Here we report successful solid state crystallization thin film amorphous GeO2 into on various substrates including Al2O3, MgAl2O4, MgO, LaAlO3 SrTiO3. At relatively low annealing temperatures, process spherulitic: with fibers growing radially from...
Ultrathin Hf1-x Zr x O2 films have attracted tremendous interest since they show ferroelectric behavior at the nanoscale, where other ferroelectrics fail to stabilize polar state. Their promise revolutionize electronics landscape comes from well-known Si compatibility of HfO2 and ZrO2, which (in amorphous form) are already used as gate oxides in MOSFETs. However, recently discovered crystalline phases hafnia-based been grown on only polycrystalline form. Better properties improved quality...
Despite its potential for CMOS applications, atomic layer deposition (ALD) of GeO2 thin films, by itself or in combination with SiO2, has not been widely investigated yet. Here, we report the ALD growth SiO2/GeO2 multilayers on si1icon substrates using a so far unexplored Ge precursor. The characterization various periodicities reveals layer-by-layer electron density contrast and absence chemical intermixing, down to periodicity two layers.
The unconventional Si-compatible ferroelectricity in hafnia-based systems, which becomes robust only at nanoscopic sizes, has attracted a lot of interest. While metastable polar orthorhombic (o-) phase (Pca21) is widely regarded as the responsible for ferroelectricity, higher energy rhombohedral (r-) recently reported on epitaxial HfZrO4 (HZO) films grown (001) SrTiO3 (R3m or R3), (0001) GaN (R3), and Si (111). Armed with results these here we report systematic study leading toward...
α-Quartz (SiO2) is one of the most widely used piezoelectric materials. However, challenges associated with control crystallization and growth process limit its production to hydrothermal bulk crystals. GeO2 can also crystallize into α-quartz phase, a higher response better thermal stability than SiO2. In previous study, we have found that on nonquartz substrates shows tendency form spherulites randomized orientation; while epitaxial crystalline thin films take place quartz substrates. in...
The growth of α-quartz-based piezoelectric thin films opens the door to higher-frequency electromechanical devices than those available through top-down approaches. We report on SiO2/GeO2 by pulsed laser deposition and their subsequent crystallization. By introducing a devitrifying agent uniformly within film, we are able obtain α-quartz phase in form platelets with lateral sizes above 100 μm at accessible temperatures. Films containing different amounts investigated, crystallinity is...
Abstract $$SiO_2$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>S</mml:mi><mml:mi>i</mml:mi><mml:msub><mml:mi>O</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math> with the $$\alpha$$ xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>α</mml:mi></mml:math> -quartz structure is one of most popular piezoelectrics. It widely used in crystal oscillators, bulk acoustic wave (BAW) devices, surface (SAW) and so on. $$GeO_2$$...
Memristive devices made of silicon compatible simple oxides are great interest for storage and logic in future adaptable electronics non-digital computing applications. A series highly desirable properties observed an atomic-layer-deposited hafnia-based stack, triggered our to investigate their suitability technological implementations. In this paper, we report attempts reproduce the behaviour within framework a proposed underlying mechanism. The inability achieving electrical response...
The use of semiconductor technologies for the development qubits is having a strong development. This paper reports technological solutions to enable experimentation on qubits. Two approaches are followed: spin in quantum dots and Majorana topological computing. complemented by research advanced characterization fabricated qubit nanostructures.
SiO2 with the alpha-quartz structure is one of most popular piezoelectrics. It widely used in crystal oscillators, bulk acoustic wave (BAW) devices, surface (SAW) and so on. GeO2 can also be crystallized into it has better piezoelectric properties, higher coefficient electromechanical coupling coefficients, than SiO2. Experiments on crystals theoretical studies have shown that these properties tuned by varying Si/Ge ratio SixGe1-xO2 solid solution. However, to best our knowledge, thin films...