A5035406959- Thin-Film Transistor Technologies
- ZnO doping and properties
- Semiconductor materials and devices
- Nanowire Synthesis and Applications
Kyung Hee University
2022-2023
NC bit (South Korea)
2022
Vertical-channel thin-film transistors (VTFTs), featured to uniquely employ the In–Ga–Sn–O (IGTO)-active channel layers prepared by atomic layer deposition, were fabricated with a length (Lch) as short 150 nm and characterized in terms of short-channel effect (SCE) operational reliability. All devices exhibited sound stable operations, including durability against SCEs, such negligible DIBL effects, even for nanoscale regime Lch. The IGTO VTFT cationic composition (In/Ga/Sn) 3.8:3.9:1.0 was...
In–Ga–Sn–O (IGTO) thin-film transistors (TFTs) were fabricated with channel lengths from <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$3 \mu \text{m}$ </tex-math></inline-formula> to 500 nm investigate the short-channel effects (SCEs), in which IGTO compositions modulated during atomic-layer deposition. The SCEs appearing TFTs found be manifested by increasing In/Ga ratio of channel, showing typical...
Thin film transistors (TFTs) using In-Ga-Sn-O (IGTO) active channel layers, which were prepared by atomic-layer deposition (ALD) techniques, fabricated and characterized with exploring the optimum IGTO compositions process conditions for formation of gate-stack structures. The introduction an O3 oxidant was confirmed to secure a wider window, explained hydrogen incorporation from protection layer/gate insulator stacked layers into channel. cationic thin films controlled subcyclic ratio...