A5065993950- Semiconductor materials and devices
- Electron and X-Ray Spectroscopy Techniques
- Copper Interconnects and Reliability
- Semiconductor materials and interfaces
- Ion-surface interactions and analysis
- Integrated Circuits and Semiconductor Failure Analysis
- Polymer crystallization and properties
- Advanced Electron Microscopy Techniques and Applications
- Silicon and Solar Cell Technologies
- Polymer Nanocomposites and Properties
- Advanced Materials Characterization Techniques
- Spectroscopy and Quantum Chemical Studies
- Surface and Thin Film Phenomena
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Nanostructures and Photoluminescence
- Thin-Film Transistor Technologies
- Electronic Packaging and Soldering Technologies
- Advancements in Photolithography Techniques
- Force Microscopy Techniques and Applications
- Anodic Oxide Films and Nanostructures
- 3D IC and TSV technologies
- Ferroelectric and Negative Capacitance Devices
- biodegradable polymer synthesis and properties
- Surface Roughness and Optical Measurements
- Quantum Dots Synthesis And Properties
Toray Industries, Inc. (Japan)
2007-2023
Toray (United States)
2009-2020
Université Paris-Sud
2016
Laboratoire de physique des Solides
2016
Centre National de la Recherche Scientifique
2016
Edge Technologies (United States)
2009
The University of Tokyo
2003-2005
Osaka University
2003
We investigated the optical properties of localized surface plasmons with different orders in individual silver nanotriangles sizes by electron energy loss spectroscopy (EELS) and cathodoluminescence (CL) same scanning transmission microscope. EELS CL spectral imaging within give information about extinction scattering from nanostructures. As measured both techniques, first two order modes showed similar spatial distributions. However, appearances slightly resonant energies were confirmed...
A self-forming diffusion barrier (SFB) layer was formed at Cu–Mn/SiO2 interface. Spatial variation of the chemical composition and valence state elements in SFB investigated a subnanometer resolution using electron energy loss spectroscopy transmission microscopy. The found to have layered structure with graded compositions nanocrystalline MnO amorphous MnSiO3. Mn be +2 gradually increased +3 MnSiO3 layer. reported dielectric constant could explained by observed microstructure.
Crystallization of n-hexadecane in emulsion droplets was studied using time-resolved two-dimensional small- and wide-angle x-ray scattering with differential scanning calorimetry (2D-SAXS-WAXS-in situ DSC) which provides information about both nano- subnanoscale structural change. reproducibly crystallized into the stable triclinic phase via a transient-rotator phase. This is contrast previous results that rotator observed only occasionally for bulk samples. Thus we confirmed existence...
The thermal diffusion of germanium and oxygen atoms in HfO2/GeO2/Ge gate stacks was comprehensively evaluated by x-ray photoelectron spectroscopy secondary ion mass spectrometry combined with an isotopic labeling technique. It found that 18O-tracers composing the GeO2 underlayers diffuse within HfO2 overlayers based on Fick's law low activation energy about 0.5 eV. Although out-diffusion through also proceeded at temperatures around 200 °C, diffusing preferentially segregated surfaces,...
Laser-assisted atom probe tomography (APT) was successfully applied to analyze the elemental distributions in a high-k/metal gate stack of commercially available 45 nm node real device. APT revealed multilayer structure with nearly atomic-scale resolution, and detected small amounts Zr thin layer high-k HfO2 dielectrics H Ti metal gate. The present results demonstrate usefulness as tool analysis nanoscale device structures.
Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.
In order to understand the mechanism of line width roughness (LWR) generation and find control knobs for improving photoresist design, we established PAG activity analysis methods by utilizing Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) Transmission Electron Microscopy (TEM). TOF-SIMS depth profiling using Gas Cluster Beam (GCIB) allowed ability clearly identify ingredient distribution in films from surface bottom resist films. TEM provided information ingredients nanometer...
Semiconducting nanowires (NWs) fabricated from III–V materials have gained significant attention for their application in advanced optoelectronic devices. Here, the growth of GaAs/GaInNAs/GaAs core-multishell NWs with a triple quantum-well structure, having about 2% N and 20% In, is reported. The are grown via selective area plasma-assisted molecular beam epitaxy on patterned Si(111) substrates SiO2 mask holes. nucleation GaAs nanowires' core carried out by Ga-induced vapor–liquid–solid at...
It is very important to control the elemental composition and bonding structure at gate electrode/gate dielectrics interface in metal-oxide-semiconductor transistor devices because this determines threshold voltage of electrode. In study, we investigated between antimony (Sb)-doped nickel-fully-silicide electrode SiO2 by employing high-spatial resolution techniques such as energy dispersive x-ray spectroscopy electron energy-loss using a scanning transmission microscope. one region, found...
Low temperature (<; 180 °C) Cu/In bonding scheme in wafer-level is successfully developed. The bonded sample represents robust quality and passes mechanical tests. inter-diffusion mechanism IMC phases are investigated by EDX EELS. In addition, the specific contact resistance of chip measured approximately 3 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-9</sup> Ω-cm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> modified Kelvin...
A patterned low dielectric constant (κ) film composed of a porous Si–O–C layer (p-SiOC) and Cu interconnect is characterized by electron energy loss spectroscopy (EELS) with transmission microscopy. The relative thickness distribution map obtained the valence EELS (VEELS) log-ratio technique nanometer scale resolution. Two regions depleted carbon composition varied are found in p-SiOC near side wall lines, which ascribed to process-induced damage. They cannot be identified only conventional...
Electron energy-loss spectroscopy (EELS) in scanning-TEM with several nanometer spatial resolution, is a powerful technique for the evaluation of electric properties metal interconnects. EELS spectra below tenths eV reflect dielectric function through electron polarization at local area interests, which connects such as valence density and electrical resistivity.
Journal Article Unveiling Nanometric Plasmons Optical Properties With Advanced Electron Spectroscopy in the Scanning Transmission Microscope Get access M Kociak, Kociak Laboratoire de Physique des Solides, CNRS UMR8502, Université Paris-Sud XI, Orsay, France Search for other works by this author on: Oxford Academic Google Scholar A Losquin, Losquin N Kawasaki, Kawasaki Morphological Research Laboratory, Toray Center Inc., Otsu, Shiga Japan H Lourenço-Martins, Lourenço-Martins Campos, Campos...
Scanning transmission electron microscopy (STEM) is a powerful tool for not only imaging but also elemental composition and chemical bonding analysis by energy dispersive X-ray spectroscopy (EDX) energy-loss (EELS) with nanometer spatial resolutions. The technique of spherical aberration correction has recently been developed, angstrom resolutions have achieved EDX EELS measurement as well imaging. I introduce other recent trends in STEM related techniques. Low acceleration voltage often...
We investigated the behavior of Cu-Cu hybrid bonding in commercial semiconductor devices using in-situ heating TEM and automated crystal orientation mapping (ACOM-TEM). In-situ realized real-time direct observation a slight shift interface during annealing. Furthermore, ACOM-TEM analysis showed that Cu was changed by annealing, as some grain boundaries turned into more ordered twin average size increased.
Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – 5, 2010.
Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – 5, 2010.