The unique electronic properties of single-walled carbon nanotubes (SWNTs) make them promising candidates for next generation electronics, particularly in systems that demand high frequency (e.g., radio frequency, RF) operation. Transistors incorporate perfectly aligned, parallel arrays SWNTs avoid the practical limitations devices use individual tubes, and they also enable comprehensive experimental theoretical evaluation intrinsic properties. Thus, consisting represent a route to RF...

Continuous wave laser operation at 25°C, with simultaneous electrical gain, of an InGaP–GaAs heterojunction bipolar transistor laser, AlGaAs optical confining layers and InGaAs recombination quantum well incorporated into the p-type base region, is demonstrated. At threshold (IB=40mA, VCB=0, 25°C), current gain β=ΔIC∕ΔIB in common-emitter changes abruptly (2.3→1.2,β>1), modes developing wavelength λ∼1006nm. Direct three-port modulation 3GHz demonstrated for a device 2.2μm emitter...

This paper investigates the performance and lifetime of a metal-to-metal shunt RF MEMS switch fabricated on an SI-GaAs substrate. The is bridge design that compatible with standard microelectronic processing techniques. includes actuation voltages less than 15 V, isolation better 20 dB from 0.25 to 40 GHz, switching speeds 22 μs. Varying geometry affects both voltage reliability, tradeoffs are discussed. We have developed cold test method identify root cause sticking as failure mechanism....

This letter reports the enhanced radiative recombination realized by incorporating InGaAs quantum wells in base layer of light-emitting InGaP/GaAs heterojunction bipolar transistors (LETs) operating common-emitter configuration. Two 50 Å In1−xGaxAs (x=85%) (QWs) acting, effect, as electron capture centers (“traps”) are imbedded 300 GaAs layer, thus improving (as a “collector” and center) light emission intensity compared to similar LET structure without QWs base. Gigahertz operation QW with...

We show experimentally and analytically that fast spontaneous recombination lifetime, τB,spon, leads to resonance-free frequency response in semiconductor lasers, as a consequence higher speed operation. Faster τB,spon is obtained by reverse-bias collector field pinning tilting dynamic (removable) charge population thin base (τt∼ps), allowing only “fast” recombination. optical on prototype transistor laser (TL) with τB,spon∼29 ps. Based the TL, tilted-charge diode laser, demonstrated 10.3...

Next-generation high data rate wireless communication systems offer completely new ways to access information and services. To provide higher speed bandwidth, RF transceivers in next-generation communications are expected performance both transmitting receiving circuitry meet quality of service. The semiconductor device technologies chosen will depend greatly on the tradeoffs between manufacturing cost circuit requirements, as well variations system architecture. It is hard find a single...

A research team at the University of Illinois Urbana-Champaign has developed a new, more powerful kind device, called transistor laser. The puts out both electrical signals and laser beam, which can be directly modulated to send optical rate 10 billion bits per second. With some further modification, will eventually staggering 100 second or more. Instead using relatively slow wires connect chips stacked together in packages, lasers used as interconnects, would let data flow instantaneously...

The effects of hydrogenation in high-purity p-type GaAs grown by molecular beam epitaxy and metalorganic chemical vapor deposition have been investigated low-temperature photoluminescence Hall-effect measurements. Before hydrogenation, measurements showed the dominant acceptor original samples was C, while after concentration electrically active C acceptors significantly reduced were highly resistive. These electrical spectroscopic results show that can be passivated hydrogenation.

We have designed and fabricated a high speed 850 nm oxide-confined vertical cavity surface emitting laser with an oxide aperture dimension of ~ 4 μm threshold current ITH=0.53 mA at room temperature (20 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">°</sup> C). It demonstrates modulation bandwidth 21.2 GHz, achieves relative intensity noise reaching standard quantum limit 2hν/P <sub xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> =-154.3...

The quantum-well (QW) heterojunction bipolar transistor (HBT) laser [the (TL)], inherently a fast switching device, operates by transporting small minority base charge densities <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex Notation="TeX">$\sim\!\! {\hbox {10}}^{16}\ {cm}}^{-3}$</tex></formula> over nanoscale thickness ( xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$&lt;$</tex></formula> 900 A)...

The electrically pumped vertical-cavity surface-emitting laser (VCSEL) was first demonstrated with metal cavities by Iga (1979); however, the device threshold current too high. Distributed Bragg reflector proposed Scifres and Burnham (1975) were adopted to improve optical cavity loss. Yet, it not a practical use until discovery of native oxide AlGaAs insertion quantum wells provide simultaneous confinement in semiconductor Holonyak Dallesasse (1990). Later, "low-threshold" oxide-confined...

Presents corrections to the paper, Corrections "PCIe 5.0 Connector Distributed Physical-Based Circuit Model With Loading Resonances for Fast SI Diagnosis and Pathfinding".

Previous studies demonstrated the feasibility of using 100-/spl mu/m inner diameter planar spiral inductors (microcoils) as detectors in /sup 1/H nuclear magnetic resonance (NMR) microspectroscopy. However, high-resolution NMR applications were not possible due to poor spectral resolution and low signal-to-noise ratio (SNR). These limitations performance have now been largely overcome by a nonconductive liquid fluorocarbon (FC-43) minimize effects susceptibility mismatch between materials,...

Pseudomorphic InP∕InGaAs heterojunction bipolar transistors (PHBTs) using a compositionally graded collector (10% indium grading) and base (6% to reduce the transit time of device are reported. A 0.4×6μm2 HBT achieves excellent ƒT values 604GHz (associated ƒMAX=246GHz) at current density 16.8mA∕μm2, with dc gain 65 breakdown voltage BVCEO=1.7V.

A family of planar gold RF microcoils were fabricated using microlithography on a gallium arsenide substrate. The used in /sup 1/H nuclear magnetic resonance (PIMR) spectroscopy experiments at 300 MHz (7.05 T). These new are key component the design integrated MR coils and amplifiers for NMR microspectroscopy.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

The pseudomorphic collector structure is known to allow enhanced transport, facilitating higher current cutoff frequencies at lower densities and junction temperatures compared traditional single heterojunction structures. performance of a 0.25×3μm2 heteojunction bipolar transistors achieves peak fT 710 GHz (fMAX=340GHz) density 20mA∕μm2. same device fT∕fMAX 540∕407GHz reduced 7.5mA∕μm2. epitaxial employs 12.5 nm strained InGaAs base 55 collector, exhibits β 115 breakdown voltage BVCEO=1.75V.

A quantum well (160Å) transistor laser with a 400μm cavity length that achieves the large 3dB modulation bandwidth of 13.5GHz is described. The fast base recombination (transport determined, τBL&amp;lt;10ps) permits improvement carrier-photon damping ratio (&amp;gt;1∕2), resulting in resonant peak magnitude unity and consequently resonance frequency ∼0GHz (no peak) small-signal response. Quantum band filling saturation are observed on ground state (λ=1000nm), increase operation first excited...

A transistor laser with a tunnel junction collector is demonstrated. Its optical output sensitive to third terminal voltage control owing the electron tunneling (photon-assisted or not assisted) from base collector, which acts in further support of resupply holes for recombination addition usual Ohmic current, IB. Collector enhances operation even under weak field and quenches it strong reverse-biased field. The sensitivity enables be directly modulated by both current control.

Based on an earlier charge control analysis, we have constructed a microwave circuit model of three-port quantum-well (QW) transistor laser (TL) by extending Kirchhoff’s law to include electron-photon interaction, yield electrical-optical form law. The TL includes both intrinsic device elements and extrinsic parasitic elements, fits accurately measured S-parameters upto 20 GHz matches also eye-diagram data up 13 Gb/s (equipment-limited). yields electrical optical parameters as well physical...

Pseudomorphic InP HBTs (PHBTs) with a vertically scaled design implementing 12.5 nm base and 55 collector exhibit record current gain cutoff frequency performance of f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> =765 GHz when measured at 25°C. When cooled to -55°C, improves more than 10% =845 due enhanced electron transport reduced parasitic charging delays as determined by small signal equivalent circuit parameter extraction. Peak...

The distribution coefficients for the growth of lattice-matched InGaAsP on (100) -InP substrates in 1.15–1.31-μm spectral range have been determined. These results used heterojunction photodiodes with quantum efficiencies ⩾48% at 1.27 μm.

Vertical microcavity surface-emitting lasers employing quantum wells and small aperture buried-oxide current field confinement are demonstrated with wider mode spacing faster spontaneous carrier recombination (enhanced Purcell factor), lower threshold current, larger side suppression ratio (SMSR), higher photon density temperature insensitivity. The result is a laser that achieves microwave modulation bandwidth (f−3dB = 15.8 GHz) at ultra-low power consumption (1.5 mW) slope for the...

A single quantum well transistor laser (cavity length L = 300 μm) has been designed and fabricated that operates with threshold ITH 18 mA at 15 °C 14 0 °C. Due to the “fast” base recombination lifetime (τB &amp;lt; 29 ps), demonstrates reduced photon-carrier resonance amplitude (&amp;lt;4 dB) over its entire bias range a modulation bandwidth f-3dB 9.8 GHz for IB/ITH 3.3 17 6.4. Under same conditions, simultaneous electrical optical “open-eye” signal operations are demonstrated 20 40 Gb/s...

Recent research and progress have shown that using light-emitting diodes (LEDs) as a high-speed transmitter is promising candidate in data system. The photonic crystal (PhC) LED (PhCLED) can improve the performance of devices for visible light communication (VLC) due to its unique spatial temporal management modes. In this paper, dynamic behaviors PhCLEDs at both small- large-signal modulation are studied. Room-temperature time-resolved photoluminescence (TRPL) Raman scattering measurements...

A novel low-voltage radio-frequency microelectromechanical system (RF MEMS) switch is reported. The device switching voltages are 14-17 volts. When the operated in an 'on' state, insertion loss of less than 0.5 dB with a return -15 at 40 GHz was measured. its 'off' isolation better 27 over frequency band from 0.25 to achieved. RF MEMS equivalent circuit model shows that resistance 0.3 /spl Omega/ and capacitance 90 fF, which results figure merit 6000 GHz.