A5062619199- Electrical Fault Detection and Protection
- Ga2O3 and related materials
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and devices
- Transition Metal Oxide Nanomaterials
- GaN-based semiconductor devices and materials
- Concrete Corrosion and Durability
- Electrostatic Discharge in Electronics
- ZnO doping and properties
- Theology and Canon Law Studies
- Lightning and Electromagnetic Phenomena
- Reformation and Early Modern Christianity
- Air Quality Monitoring and Forecasting
- Water Quality Monitoring and Analysis
- Electronic and Structural Properties of Oxides
- American Constitutional Law and Politics
University of Utah
2020-2025
Rutile germanium dioxide (r-GeO2) has been identified as an ultrawide bandgap semiconductor recently, featuring a of 4.68 eV—comparable to Ga2O3—but offering bipolar dopability, higher electron mobility, thermal conductivity, and Baliga figure merit (BFOM). These superior properties position GeO2 promising material for various applications. However, the epitaxial growth r-GeO2, particularly in its most advantageous rutile polymorph, is still at early stage. This work explores r-GeO2 using...
Spread spectrum time domain reflectometry (SSTDR) is a non-intrusive method for electrical fault detection and localization that enables continuous monitoring of live systems. Electrical faults create changes in impedance subsequent the SSTDR reflection response. These response can be detected only if are outside window uncertainty measurement. In this paper, we establish determining associated minimum-detectable change measurements. We demonstrate photovoltaic (PV) systems, although methods...
The ability of spread spectrum time domain reflectometry (SSTDR) to detect and locate faults in photovoltaic (PV) systems is considered this article. This article provides a simulation that could be used for studying how other parameters affect the response evaluating fault detection algorithms, providing comparison simulations iterative inversion algorithms faults, or it potentially replace measured baseline these algorithms. uses an enhanced systematic solution procedure find reflection...
Unexpected results have been seen in multiple papers involving spread spectrum time domain reflectometry (SSTDR) measurements on twin lead cables with one line containing a fault. A small portion of the signal is able to transmit past fault, reflect off end cable, return back through and be recorded by SSTDR. This paper explains physics why this can happen, effect nearby ground planes. The transmission fault involves electric magnetic fields coupling conductive objects. allows for amount...
In this paper, we present a method for estimating complex impedances using reflectometry and modified steepest descent inversion algorithm. We simulate spread spectrum time domain (SSTDR), which can measure on energized systems an experimental setup with resistive capacitive loads. A parametric function, includes both misfit function stabilizer is created. The least squares estimate of how close the model data matches observed data. prevents algorithm from becoming unstable diverging....
Utilizing spread spectrum time domain reflectometry (SSTDR) to detect, locate, and characterize faults in photovoltaic (PV) systems is examined this paper.We present a method obtain the model parameters that are needed produce digital twin SSTDR responses for PV systems.The could be used predict within reflection transmission coefficients at each impedance discontinuity system along with propagation across cable segment.We parameter by applying inverse modeling techniques experimental data...
Ultrawide bandgap (UWBG) semiconductors are promising for next-generation power electronics, largely attributed to their substantial and exceptional breakdown electric field. Rutile GeO2 (r-GeO2) emerges as a alternative, particularly because of its ambipolar dopability. However, research on r-GeO2 is still in infancy, further investigation into structural properties essential enhancing epilayer quality. In our previous work, we identified distinct surface morphologies; square-patterned...
Nowadays, the third-generation semiconductor led by GaN has brought great changes to industry. Utilizing its characteristics of a wide bandgap, high breakdown Electric field, and electron mobility, material is widely applied in areas such as 5G communication electric vehicles improve energy conservation reduce emissions. However, with progress development electronics, surface interface defects have become main problem that limits further promotion their performance stability, increasing...
We report a novel approach for crafting robust diamond/\b{eta}-Ga2O3 hetero-p-n-junctions through the mechanical integration of their bulk materials. This resulting heterojunction, with turn-on voltage ~2.7 V at room temperature, exhibits resilient electrical performance across temperature spectrum up to 125{\deg}C, displaying minimal hysteresis-measuring as low 0.2 and below 0.7 125{\deg}C. Remarkably, ideality factor achieves record value 1.28, setting new benchmark diamond/ \b{eta}-Ga2O3...