A5060636009- Thin-Film Transistor Technologies
- Nanowire Synthesis and Applications
- Silicon Nanostructures and Photoluminescence
- Photonic and Optical Devices
- Organic Electronics and Photovoltaics
- Conducting polymers and applications
- Semiconductor materials and devices
- Organic Light-Emitting Diodes Research
- Semiconductor Quantum Structures and Devices
- Advanced Optical Sensing Technologies
- Silicon and Solar Cell Technologies
- Semiconductor materials and interfaces
- Optical Coatings and Gratings
- Quantum Dots Synthesis And Properties
- Luminescence and Fluorescent Materials
- Photonic Crystals and Applications
- Carbon and Quantum Dots Applications
- Analytical Chemistry and Sensors
- CCD and CMOS Imaging Sensors
- Remote Sensing and LiDAR Applications
- Graphene research and applications
- ZnO doping and properties
- Transition Metal Oxide Nanomaterials
- Perovskite Materials and Applications
- Luminescence Properties of Advanced Materials
National Chung Hsing University
2016-2025
National Taipei University
2016-2024
National Institute for Materials Science
2024
National Yang Ming Chiao Tung University
2024
ITRI International
2003-2014
Industrial Technology Research Institute
2003-2007
National Tsing Hua University
1999-2005
Purdue University West Lafayette
1989
An a-IGZO thin-film phototransistor incorporating graphene absorption layer was proposed to enhance the responsivity and sensitivity simultaneously for photodetection from ultraviolet visible regime. The spin-coated dots absorb incident light, transferring electrons underlying establish a photochannel. 5 A/W 1000 photo-to-dark current ratio were achieved at 500 nm. As compared with <;1% absorption, indicates >2700 transistor gain. highest is 897 10 <sup...
We demonstrated a high-performance Si-organic hybrid heterojunction solar cell utilizing low-temperature and liquid-phase-processed TiO2 as an interlayer between poly(3,4-ethylene dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) Si nanoholes to produce conformal contact on the surface of nanostructure. The hydrophilic TiO2/Si-nanohole enabled PEDOT:PSS flow into spacing close-packed nanoholes. Scanning electron microscopy images were used confirm nanohole filling induced by TiO2. With...
A new scheme of LiDAR-embedded smart laser headlight module (LHM) for autonomous vehicles is proposed and demonstrated. The LiDAR sensor was fabricated by LeddarTech with the wavelength 905-nm, whereas LHM a highly reliable glass phosphor material that exhibited excellent thermal stability. consisted two blue diodes, LEDs, yellow phosphor-converter layer copper dissipation substrate, parabolic reflector to reflect light combined into white light. total output optical power 9.5 W, luminous...
We fabricated large-area, vertically aligned silicon nanowire (SiNW) arrays on Si substrates employing catalytic etching a polystyrene nanosphere template. The density of SiNWs was as high 1010/cm2, and the bottom radii ranged between 30 60 nm. reflection from SiNW layer approximately 0.1% over spectral range 300–800 nm for longer than 750 Effective medium theory applied to explain this extremely low reflection, it confirmed that incident light scatters randomly inside cone-like SiNWs, which...
In this study, the Al2O3 nanoparticles were incorporated into polymer as a nono-composite dielectric for used in flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on polyethylene naphthalate substrate by solution process. The process temperature was well below 100 °C. a-IGZO TFT exhibit mobility of 5.13 cm2/V s substrate. After bending at radius 4 mm (strain = 1.56%) more than times, performance nearly unchanged. addition, electrical characteristics are less...
White electroluminescence (EL) was observed from hydrogenated amorphous-SiNx-based light-emitting device. Silicon nitride thin films were deposited on the indium-tin-oxide (ITO)-coated glass substrate by plasma enhanced chemical vapor deposition method with a mixture of Ar-diluted 5% SiH4 and pure N2 gases, in ratio 2 to 1. Measured x value film is 0.56, corresponding photoluminescence a-SiN0.56:H exhibited red-infrared spectrum, centered at 630 nm. The layer structure EL device...
Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si quantum-dot light-emitting diodes is reported. The devices were fabricated in a mesa-type structure, with silicon oxide layer on the top for surface/sidewall passivation. Different passivation processes employed. We found that integrated intensities relatively less sensitive to temperature, persisting nearly same intensity up RT. device shows an internal quantum efficiency of about 0.015% improved emission property attributed...
In this letter, we propose an amorphous-silicon (a-Si) solar cell with a nanowire-array structure. The proposed structure has photon absorption and carrier transport that are perpendicular to each other, which could overcome the efficiency limit of a-Si cell. This nanowire n-type array in i-layer p-layer sequentially grown along surface nanowire. Under illumination, light is absorbed axial direction nanowire, radial direction. Numerical simulations show photocurrent 4000-nm-long nearly 40%...
A Ge quantum dot photodetector has been demonstrated using a metal-oxide-semiconductor (MOS) tunneling structure. The oxide film was grown by liquid phase deposition (LPD) at 50/spl deg/C. with five-period responsivity of 130, 0.16, and 0.08 mA/W wavelengths 820 nm, 1300 1550 respectively. device 20-period shows 600 the wavelength 850 nm. room temperature dark current density is as low 0.06 mA/cm/sup 2/. high performance photodetectors nm makes it feasible to integrate electrooptical devices...
A novel free-standing resonant-cavity-enhanced (RCE) Ge thin-film absorber is designed with a bottom distributed Bragg reflector (DBR) for infrared photodetection at 1550 nm wavelength based on Si substrate. The structure offers high degree of freedom in optimizing the number periods, layer arrangement, and thickness each DBR. SiO2/Si DBR that compatible processing technology used thin film to construct RCE structure. Based our theoretical study, SiO2 low-index must be placed next utilize...
A low temperature plasma-assisted reduction to engineer the optical bandgaps of graphene oxide nanoribbons (GONRs) has been demonstrated.
We analyze the ultimate timing error that can be achieved in operation of a LiDAR based on time-of-flight (ToF) measurement distance using pulsed light source and two possible detectors optic receiver: (i) an avalanche photodiode APD linear mode, (ii) SPAD single photon detector. both random systematic contributions to total find latter becomes dominant at large (>10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) number detected...
Photoluminescence investigations on stacked Ge/Si dots with different spacer thicknesses are presented. According to the emission energy shift in Ge dots, we found that a thinner layer will lead remarkable Ge–Si intermixing during stacking of dots. Such material not only shallows dot potential depth, but also softens sharpness dot/spacer interface. In addition, temperature photoluminescence quenching varies thickness. Finally, point out some important factors relevant room-temperature...
In this work, microcrystalline silicon nanostalagmite [μc-SiNS] arrays have been successfully fabricated on glass by catalytic etching process through a template. The template, polystyrene [PS] nanospheres, with diameter and density of 30 to approximately 50 nm 1010/cm2, respectively, was obtained modified nanophase separation PS-containing block copolymer. length μc-SiNS could be controlled the duration time. exhibits ultra-low reflection 0.3% absorption around 99% over 300 800 in...
In the hydrogenated amorphous silicon [a-Si:H]-thin film solar cell, large amounts of traps reduce carrier's lifetime that limit photovoltaic performance, especially power conversion efficiency. The nanowire structure is proposed to solve low efficiency problem. this work, we propose an [a-Si]-solar cell with a nanocone array were implemented by reactive-ion etching through polystyrene nanosphere template. amorphous-Si exhibits absorption coefficient around 5 × 105/cm which similar planar...
Abstract Next‐generation photovoltaic technologies such as dye‐sensitized solar cells, organic thin‐film photovoltaics and perovskite cells are promising to efficiently harvest ambient light energy. However, more deeper understanding of their characteristics is essential create new applications under room illumination. In this study, for the first time, difference in temperature coefficients angular dependence parameters large‐area devices investigated systematically compact fluorescent lamp...